Author: Syed Hassan Shah
Publisher: ProQuest
ISBN: 9780549411734
Category : Indium compounds
Languages : en
Pages :
Book Description
Study of Nonlinear Optical Properties of Indium Arsenide/gallium Arsenide and Indium Gallium Arsenide/gallium Arsenide Self-assembled Quantum Dots
Author: Syed Hassan Shah
Publisher: ProQuest
ISBN: 9780549411734
Category : Indium compounds
Languages : en
Pages :
Book Description
Publisher: ProQuest
ISBN: 9780549411734
Category : Indium compounds
Languages : en
Pages :
Book Description
Chemical Abstracts
Properties of Lattice-matched and Strained Indium Gallium Arsenide
Author: P. Bhattacharya
Publisher: Inst of Engineering & Technology
ISBN: 9780863416620
Category : Science
Languages : en
Pages : 340
Book Description
"...provides an authoritative and convenient collection of pertinent data." - Optical and Quantum Electronics
Publisher: Inst of Engineering & Technology
ISBN: 9780863416620
Category : Science
Languages : en
Pages : 340
Book Description
"...provides an authoritative and convenient collection of pertinent data." - Optical and Quantum Electronics
Semiconductor Nanowires
Author: J Arbiol
Publisher: Elsevier
ISBN: 1782422633
Category : Technology & Engineering
Languages : en
Pages : 573
Book Description
Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields
Publisher: Elsevier
ISBN: 1782422633
Category : Technology & Engineering
Languages : en
Pages : 573
Book Description
Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields
Dielectric Properties of Indium Gallium Arsenide/indium Phosphide Multiple Quantum Wells, Films, and Waveguides
Author: Albert Leroy Kellner
Publisher:
ISBN:
Category :
Languages : en
Pages : 336
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 336
Book Description
STUDIES ON STRAINED (INDIUM,GALLIUM)ARSENIDE/GALLIUM-ARSENIDE SEMICONDUCTORS AND OPTICAL DEVICES.
Author: UTPAL DAS
Publisher:
ISBN:
Category :
Languages : en
Pages : 183
Book Description
fabrication of optical waveguides. This conclusion is corroborated by losses as low as 0.6dB/cm measured in ion-milled In$\sb{0.01}$Ga$\sb{0.99}$As single-mode ridge waveguides at a wavelength of 1.15$\mu$m. Coupling coefficients of $\sim$16/cm are measured in coplanar couplers.
Publisher:
ISBN:
Category :
Languages : en
Pages : 183
Book Description
fabrication of optical waveguides. This conclusion is corroborated by losses as low as 0.6dB/cm measured in ion-milled In$\sb{0.01}$Ga$\sb{0.99}$As single-mode ridge waveguides at a wavelength of 1.15$\mu$m. Coupling coefficients of $\sim$16/cm are measured in coplanar couplers.
Ceramic Abstracts
Self-Assembled InGaAs/GaAs Quantum Dots
Author:
Publisher: Academic Press
ISBN: 0080864589
Category : Technology & Engineering
Languages : en
Pages : 385
Book Description
This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.
Publisher: Academic Press
ISBN: 0080864589
Category : Technology & Engineering
Languages : en
Pages : 385
Book Description
This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.
A Comparative Study of Indium-arsenide/gallium-arsenide Short-period-superlattice and Alloy Quantum-well Structures on Gallium-arsenide Substrates
American Doctoral Dissertations
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 816
Book Description
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 816
Book Description