Study of Ionized Cluster Beam Techniques for Reactive Deposition of Gallium Nitride Thin Films PDF Download

Author: Jyh Sheen
Publisher:
ISBN:
Category : Electrophoretic deposition
Languages : en
Pages : 224

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Author: Veronica S. Kyriacou
Publisher:
ISBN:
Category : Gallium
Languages : en
Pages : 194

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Author: Toshinori Takagi
Publisher: Univ. Press of Mississippi
ISBN: 9780815511687
Category : Technology & Engineering
Languages : en
Pages : 244

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Book Description
The technique of ionized-cluster beam (ICB) deposition, the fundamentals of ICB technology, and technical applications of thin films produced by ICB deposition are presented for those interested or working in the field. ICB processes are characterized, and equipment is available. The films deposited are often superior to those deposited by either evaporation or sputtering, and the range of control of the process exceeds other techniques by a great margin.

Author: Wade H. Shafer
Publisher: Springer Science & Business Media
ISBN: 1461534747
Category : Science
Languages : en
Pages : 421

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Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 34 (thesis year 1989) a total of 13,377 theses titles from 26 Canadian and 184 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 34 reports theses submitted in 1989, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.

Author: W. Knauer
Publisher:
ISBN:
Category :
Languages : en
Pages : 69

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Book Description
Cluster beams offer a means of depositing high-quality thin films at low substrate temperature for microelectronics fabrication. The advantage of cluster beam depositions is the ability to optimize the energy of the impacting particles, either directly in clustered vapors of nonvolatile materials or indirectly by bombarding the film during deposition with clusters of inert gases. When a cluster beam is ionized and accelerated through several thousand volts, clusters that contain 1000 or more atoms strike the surface with several electron volt energy per atom. The suprathermal energy of the depositing atoms is thought to produce unique thin films (either in quality, or in the ability to be deposited at all). This report describes the general effort on cluster beam formation methods, on cluster ionization by electron bombardment in a gridded ionization cell, on electrostatic mass separation, and on electrostatic acceleration to a predetermined velocity. Detailed results are given on the improvements in performance of ionization cells for clusters beams of nonvolatile and gaseous materials.

Author: R. Freer
Publisher: Springer Science & Business Media
ISBN: 9400921012
Category : Technology & Engineering
Languages : en
Pages : 716

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Book Description
Carbides, nitrides and borides are families of related refractory materials. Traditionally they have been employed in applications associated with engineering ceramics where either high temperature strength or stability is of primary importance. In recent years there has been a growing awareness of the interesting electrical, thermal and optical properties exhibited by these materials, and the fact that many can be prepared as monolithic ceramics, single crystals and thin films. In practical terms carbides, nitrides and borides offer the prospect of a new generation of semiconductor materials, for example, which can function at very high temperatures in severe environmental conditions. However, as yet, we have only a limited understanding of the detailed physics and chemistry of the materials and how the preparation techniques influence the properties. Under the auspices of the NATO Science Committee an Advanced Research Workshop (ARW) was held on the Physics and Chemistry of Carbides, Nitrides and Borides (University of Manchester, 18-22 September, 1989) in order to assess progress to date and identify the most promising themes and materials for future research. An international group of 38 scientists considered developments in 5 main areas: The preparation of powders, monolithic ceramics, single crystals and thin films; Phase transformations, microstructure, defect structure and mass transport; Materials stability; Theoretical studies; Electrical, thermal and optical properties of bulk materials and thin films.

Author: C.G. Van de Walle
Publisher: Elsevier
ISBN: 0444599177
Category : Science
Languages : en
Pages : 635

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Book Description
Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.

Author: E. Kasper
Publisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411

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Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540

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Book Description

Author: T. Itoh
Publisher: Elsevier
ISBN: 0444599088
Category : Science
Languages : en
Pages : 458

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Book Description
This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams. Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in this field.