STUDIES ON STRAINED (INDIUM,GALLIUM)ARSENIDE/GALLIUM-ARSENIDE SEMICONDUCTORS AND OPTICAL DEVICES. PDF Download
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Author: UTPAL DAS Publisher: ISBN: Category : Languages : en Pages : 183
Book Description
fabrication of optical waveguides. This conclusion is corroborated by losses as low as 0.6dB/cm measured in ion-milled In$\sb{0.01}$Ga$\sb{0.99}$As single-mode ridge waveguides at a wavelength of 1.15$\mu$m. Coupling coefficients of $\sim$16/cm are measured in coplanar couplers.
Author: UTPAL DAS Publisher: ISBN: Category : Languages : en Pages : 183
Book Description
fabrication of optical waveguides. This conclusion is corroborated by losses as low as 0.6dB/cm measured in ion-milled In$\sb{0.01}$Ga$\sb{0.99}$As single-mode ridge waveguides at a wavelength of 1.15$\mu$m. Coupling coefficients of $\sim$16/cm are measured in coplanar couplers.
Author: Pallab Bhattacharya Publisher: Inst of Engineering & Technology ISBN: 9780852968659 Category : Technology & Engineering Languages : en Pages : 317
Book Description
The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.
Author: David W. Mueller Publisher: ISBN: Category : Languages : en Pages : 134
Book Description
Achieving high power, continuous wave, room temperature operation of midinfrared (3-5 [micrometer]) lasers is difficult due to the effects of auger recombination in band-to-band (type I) designs. Intersubband laser designs (type II) such as quantum cascade lasers reduce the effects of recombination, increasing efficiency and have advantages in large tunability of wavelength ranges (3 [micrometer] -25 [micrometer] and into the THz spectrum). Highly efficient quantum cascade laser designs are typically used in lasers designed for [greater than]5 [micrometer] wavelength operation due to the small offset of conduction band energy [delta]Ec in lattice matched materials. Some promising material systems have been used to achieve high-power output in the first atmospheric window (3-5 [micrometer]) but still suffer from low efficiency due to the lack of electron confinement. Larger [delta]Ec is attainable through the use of strained (lattice mis-matched) materials such as InGaAs/AlGaAs on GaAs. However, this material system has limitations on the traditional (100) crystal orientation due to the large strain and low critical thickness, hc. The necessity for controlled two-dimensional, optical quality layer growth limits the amount of strain incorporation due to defect formation in highly lattice mis-matched layers. The material systems used in this study are GaAs (100) and (111)B, AlGaAs, and (Ga)InAs. In the initial stage of research, I found that pseudomorphic growth of highly strained InAs layers on GaAs (111)B is possible. However, the growth window is very narrow and necessitates precise control over growth temperature and anion overpressure to achieve optical quality layers. As a result, a second stage of research explores the design space made available by this finding by using genetic algorithm based design and simulation of devices with a Schrödinger-Poisson solver - nextnano. This genetic algorithm is designed to rank candidate solutions on four important objectives for achieving novel QCL designs: operation between 3-5 [micrometer], Einj alignment just below E3, E2−E1 [almost equal to] ELO for optimal scattering for depopulation of carriers at the E2 energy level, and a gain metric [tau]3(1 − [tau]2/[tau]32). This approach was generally successful at finding unique designs, which have promise to work. However, since the algorithm ranked candidates based on only these four objectives, several interesting designs trends emerged. Many of the designs are far from the classic QCL structure and may not emit, however the trends help reveal the important design criteria. Discussion of this approach is compared to the traditional design philosophy and suggestions for improvement are centered around incorporating more objectives to guide the algorithm’s search. While improvements to the search mechanism are certainly necessary, several candidate solutions emerged and show great promise toward the goal of using this novel surface index and material system for efficient quantum cascade lasers that operate in the first atmospheric window.
Author: Günter Weimann Publisher: CRC Press ISBN: 9780750302951 Category : Technology & Engineering Languages : en Pages : 880
Book Description
Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Author: Publisher: Academic Press ISBN: 0080540988 Category : Technology & Engineering Languages : en Pages : 317
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Thermoelectric materials may be used for solid state refrigeration or power generation applications via the large Peltier effect in these materials. To be an effective thermoelectric material, a material must possess a large Seebeck coefficient, a low resistivity and a low thermal conductivity. Due to increased need for alternative energy sources providing environmentally friendly refrigeration and power generation, thermoelectric materials research experienced a rebirth in the mid 1990's. Semiconductors and Semimetals, Volume 70: Recent Trends in Thermoelectric Materials Research: Part Two provides an overview of much of this research in thermoelectric materials during the decade of the 1990's. New materials and new material concepts such as quantum well and superlattice structures gave hope to the possibilities that might be achieved. An effort was made to focus on these new materials and not on materials such as BiTe alloys, since such recent reviews are available. Experts in the field who were active researchers during this period were the primary authors to this series of review articles. This is the most complete collection of review articles that are primarily focussed on new materials and new concepts that is existence to date.
Author: UTPAL DAS
Author: UTPAL DAS
Author: Pallab Bhattacharya
Author: Syed Hassan Shah
Author: 
Author: David W. Mueller
Author: Günter Weimann
Author: 
Author: Toni D. Sauncy
Author: Guofu Feng
Author: