Studies of Thin-film Growth, Adsorption, and Oxidation by in Situ, Real-time, and Ex Situ Ion Beam Analysis PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages : 25
Book Description
We have developed a time-of-flight (TOF) ion scattering and direct recoil spectrometer (ISS/DRS) to study the surface composition and reconstruction of metals, metal-oxides, and semiconductors, and to provide in situ characterization of the thin-film deposition process. In situ, real-time study of Pb, Zr, and Ru ultrathin films produced by ion beam sputter deposition is presented as demonstration of pulsed ion beam surface analysis (PIBSA) as a means of characterizing monolayer and submonolayer growth, both in UHV and in mTorr oxygen background. The capability of performing surface analysis at pressures>10−3 Torr is unique to pulsed ion beam surface analysis among surface analytical methods and enables the in situ monitoring of oxide thin-film growth processes and surface-gas phase reactions. Using angular-resolved ISS (ARISS), combined with Auger electron spectroscopy (AES), we studied the oxygen adsorption and reconstruction of (001) oriented InSb thin-film surfaces. It was found that the adsorption of molecular oxygen on the InSb (001) surface is consistent with the Langmuir model. Oxygen adsorption preferentially occurs on the antimony sites corresponding to the extension of the lattice into the vacuum and reduces the inward contraction of the first two layers of the clean InSb (001) surface relative to the bulk atomic spacing.
Author: Publisher: ISBN: Category : Languages : en Pages : 25
Book Description
We have developed a time-of-flight (TOF) ion scattering and direct recoil spectrometer (ISS/DRS) to study the surface composition and reconstruction of metals, metal-oxides, and semiconductors, and to provide in situ characterization of the thin-film deposition process. In situ, real-time study of Pb, Zr, and Ru ultrathin films produced by ion beam sputter deposition is presented as demonstration of pulsed ion beam surface analysis (PIBSA) as a means of characterizing monolayer and submonolayer growth, both in UHV and in mTorr oxygen background. The capability of performing surface analysis at pressures>10−3 Torr is unique to pulsed ion beam surface analysis among surface analytical methods and enables the in situ monitoring of oxide thin-film growth processes and surface-gas phase reactions. Using angular-resolved ISS (ARISS), combined with Auger electron spectroscopy (AES), we studied the oxygen adsorption and reconstruction of (001) oriented InSb thin-film surfaces. It was found that the adsorption of molecular oxygen on the InSb (001) surface is consistent with the Langmuir model. Oxygen adsorption preferentially occurs on the antimony sites corresponding to the extension of the lattice into the vacuum and reduces the inward contraction of the first two layers of the clean InSb (001) surface relative to the bulk atomic spacing.
Author: Publisher: ISBN: Category : Aeronautics Languages : en Pages : 1028
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Publisher: ISBN: Category : Research Languages : en Pages : 1218
Book Description
Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.
Author: Publisher: ISBN: Category : Languages : en Pages : 29
Book Description
Non-destructive, in situ methods for characterization of thin film growth phenomena is key to understand thin film growth processes and to develop more reliable deposition procedures, especially for complex layered structures involving multi-phase materials. However, surface characterization methods that use either electrons (e.g. AES or XPS) or low energy ions (SIMS) require an UHV environment and utilize instrumentation which obstructs line of sight access to the substrate and are therefore incompatible with line of sight deposition methods and thin film deposition processes which introduce gas, either part of the deposition or in order to produce the desired phase. We have developed a means of differentially pumping both the ion beam source and detectors of a TOF ion beam surface analysis spectrometer that does not interfere with the deposition process and permits compositional and structural analysis of the growing film in the present system, at pressures up to several mTorr. Higher pressures are feasible with modified source-detector geometry. In order to quantify the sensitivity of Ion Scattering Spectroscopy (ISS) and Direct Recoil Spectroscopy (DRS), we have measured the signal intensity for stabilized clean metals in a variety of gas environments as a function of the ambient gas species and pressure, and ion beam species and kinetic energy. Results are interpreted in terms of collision cross sections which are compared with known gas phase scattering data and provide an apriori basis for the evaluation of time-of-flight ion scattering and recoil spectroscopies (ToF-ISARS) for various industrial processing environments which involve both inert and reactive cases. The cross section data for primary ion-gas molecule and recoiled atom-gas molecule interactions are also provided. from which the maximum operating pressure in any experimental configuration can be obtained.
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