Author: Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 1022
Book Description
Energy Research Abstracts
Author: Scientific and Technical Aerospace Reports
Author: Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1126
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Energy Research Abstracts
Author: Publisher:
ISBN:
Category : Power resources
Languages : en
Pages :
Book Description
Includes all works deriving from DOE, other related government-sponsored information and foreign nonnuclear information.
Structural and Electrical Properties of Graphite Intercalation Compounds and Graphite Fiber Compounds
Author: Xiao-Wen QianPublisher:
ISBN:
Category : Clathrate compounds
Languages : en
Pages : 350
Book Description
Materials Sciences Programs
Author: United States. Department of Energy. Office of Basic Energy SciencesPublisher:
ISBN:
Category : Conservation of natural resources
Languages : en
Pages : 192
Book Description
Interference Problems on Wing-fuselage Combinations in Inviscid, Incompressible Flow
Author: Aeronautical Research Council (Great Britain)Publisher:
ISBN: 9780114709266
Category : Airplanes
Languages : en
Pages : 1212
Book Description
Fiscal year 1985 Department of Energy authorization
Author: United States. Congress. House. Committee on Science and Technology. Subcommittee on Energy Development and ApplicationsPublisher:
ISBN:
Category : United States
Languages : en
Pages : 1674
Book Description
Nuclear Science Abstracts
Author: Chemical Physics of Intercalation
Author: A.P. LegrandPublisher: Springer Science & Business Media
ISBN: 1475796498
Category : Science
Languages : en
Pages : 503
Book Description
Conjugated polymers suoh as polyaoetylene (CH)x polyphenylene (C6H4)x' poly thiophene (C4H2S)x' etc., which are insulators in their pristine state, can be brought to the metallic state after "doping" with ohemioal speoies whioh oan be either eleotron donors or I aoceptors. . This doping prooess involves a oharge transfer between the dopant moleoule and the polymer ohain whioh are then supposed to be spatially olose to each other. It follows that the meohanism of doping must be oonsidered as an aotual interoalation process, which will greatly affeot the struotural oharacteristios of the starting material, as well as its morphology, as has been observed during the 2 intercalation of graphite and layered compounds . In parallel with these modifioations, the band struoture of the system changes yielding a new set of eleotronio properties. It is evident therefore that the struotural and eleotronio properties are intimately related, and must be studied simultaneously in the same system to give reliable information. A great number of studies have been devoted to the structural and electronic properties of conjugated polymers after a chemical or 2 electrochemical doping process . Most of these concern the properties of the system for a given dopant concentration. With this approach a universal pioture of the polymer/dopant system is very diffioult to obtain, as a comparison between different experiments is very hazardous. On the other hand, only a small number of measurements have been performed during the continuous electroohemioal doping of various polymers.
Comprehensive Semiconductor Science and Technology
Author: Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572
Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts