Author: Tzu-Chen Lee
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 602
Book Description
Studies of the Growth Kinetics and Mechanisms During Molecular Beam Epitaxial Growth of Al[x]Ga[-1]As and In[x]Ga[1-x]As on GaAs(100) Using RHEED Intensity Dynamics
Author: Tzu-Chen Lee
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 602
Book Description
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 602
Book Description
Elucidating the Growth Kinetics of Hybrid Molecular Beam Epitaxy
Author: Benazir Fazlioglu Yalcin
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Since their discovery, thin films have attracted tremendous attention due to their wide range of application areas. The advancements in thin films and thin film growth allow for the study of various electronic phenomena, including transport properties, magnetic ground states, and structural polarization-linked states such as piezoelectricity, pyroelectricity, and ferroelectricity. The remarkable surge in thin film development is expected to persist, given their pivotal role in driving technological progress. However, achieving high-quality and defect-free thin films, which is essential to unlock the full potential of these materials, remains a challenge, despite the utilization of a wide range of growth techniques. This need for better-quality thin films has driven scientists to explore new growth strategies and study ways to improve thin film growth in general. Here, hybrid Molecular Beam Epitaxy stands out as the strategy that has been shown to provide superior control over cation stoichiometry and thus produce higher-quality materials. The primary aim of this dissertation is to uncover ways to enhance the quality of thin films, specifically focusing on BaTiO3 and SrTiO3. Although these materials have been extensively studied, there is still much to discover to fully exploit their potential. As described in this dissertation, 45 nm thick BaTiO3 thin films grown through hybrid molecular beam epitaxy have shown promising optical constants (refractive index= 2.42 and extinction coefficient=0.056) resembling bulk-like BaTiO3. To gain further insights into the decomposition patterns of the metal-organic substance, titanium(IV) isopropoxide, used in growing titanate perovskite structures (BaTiO3, SrTiO3) via hybrid molecular beam epitaxy systems, reactive force field molecular dynamics simulations were employed. Reaction pathways were extracted, and ways to facilitate the decomposition of titanium(IV) isopropoxide molecules were investigated, along with bond energies to determine the rates ratios of bond dissociation reactions. Additionally, titanium(IV) isopropoxide molecules were simulated on SrTiO3 surfaces in a reactive force field simulation environment to study hybrid molecular beam epitaxy growth kinetics on an atomic scale for the first time. In addition, thermogravimetric analysis was performed on metal-organic substances that have been and can potentially be used in thin film growth. Using benzoic acid as a calibration standard, vapor pressure curves were extracted from thermogravimetric measurements using the Langmuir equation. The resulting data was used to discuss the suitability of these metal-organic precursors in chemical vapor deposition-based thin film growth approaches in general, and hybrid molecular beam epitaxy in particular.
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Since their discovery, thin films have attracted tremendous attention due to their wide range of application areas. The advancements in thin films and thin film growth allow for the study of various electronic phenomena, including transport properties, magnetic ground states, and structural polarization-linked states such as piezoelectricity, pyroelectricity, and ferroelectricity. The remarkable surge in thin film development is expected to persist, given their pivotal role in driving technological progress. However, achieving high-quality and defect-free thin films, which is essential to unlock the full potential of these materials, remains a challenge, despite the utilization of a wide range of growth techniques. This need for better-quality thin films has driven scientists to explore new growth strategies and study ways to improve thin film growth in general. Here, hybrid Molecular Beam Epitaxy stands out as the strategy that has been shown to provide superior control over cation stoichiometry and thus produce higher-quality materials. The primary aim of this dissertation is to uncover ways to enhance the quality of thin films, specifically focusing on BaTiO3 and SrTiO3. Although these materials have been extensively studied, there is still much to discover to fully exploit their potential. As described in this dissertation, 45 nm thick BaTiO3 thin films grown through hybrid molecular beam epitaxy have shown promising optical constants (refractive index= 2.42 and extinction coefficient=0.056) resembling bulk-like BaTiO3. To gain further insights into the decomposition patterns of the metal-organic substance, titanium(IV) isopropoxide, used in growing titanate perovskite structures (BaTiO3, SrTiO3) via hybrid molecular beam epitaxy systems, reactive force field molecular dynamics simulations were employed. Reaction pathways were extracted, and ways to facilitate the decomposition of titanium(IV) isopropoxide molecules were investigated, along with bond energies to determine the rates ratios of bond dissociation reactions. Additionally, titanium(IV) isopropoxide molecules were simulated on SrTiO3 surfaces in a reactive force field simulation environment to study hybrid molecular beam epitaxy growth kinetics on an atomic scale for the first time. In addition, thermogravimetric analysis was performed on metal-organic substances that have been and can potentially be used in thin film growth. Using benzoic acid as a calibration standard, vapor pressure curves were extracted from thermogravimetric measurements using the Langmuir equation. The resulting data was used to discuss the suitability of these metal-organic precursors in chemical vapor deposition-based thin film growth approaches in general, and hybrid molecular beam epitaxy in particular.
Study of Thin Film Growth Kinetics of Homoepitaxy by Molecular Beam Epitaxy and Pulsed Laser Deposition
Author: Byungha Shin
Publisher:
ISBN: 9780549036517
Category :
Languages : en
Pages : 184
Book Description
First, we have conducted a systematic investigation of the phase shift of the RHEED intensity oscillations during Ge(001) homoepitaxy MBE for a wide range of diffraction conditions. We conclude that the phase shift is caused by the overlap of the specular spot and the Kikuchi features, in contrast to models involving dynamical scattering theory for the phase shift.
Publisher:
ISBN: 9780549036517
Category :
Languages : en
Pages : 184
Book Description
First, we have conducted a systematic investigation of the phase shift of the RHEED intensity oscillations during Ge(001) homoepitaxy MBE for a wide range of diffraction conditions. We conclude that the phase shift is caused by the overlap of the specular spot and the Kikuchi features, in contrast to models involving dynamical scattering theory for the phase shift.
Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy
Author: Nikolai N. Ledentsov
Publisher: Springer
ISBN: 9783662155714
Category : Technology & Engineering
Languages : en
Pages : 86
Book Description
The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
Publisher: Springer
ISBN: 9783662155714
Category : Technology & Engineering
Languages : en
Pages : 86
Book Description
The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
Atomistic Aspects of Epitaxial Growth
Author: Miroslav Kotrla
Publisher: Springer Science & Business Media
ISBN: 9401003912
Category : Science
Languages : en
Pages : 588
Book Description
Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.
Publisher: Springer Science & Business Media
ISBN: 9401003912
Category : Science
Languages : en
Pages : 588
Book Description
Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.
Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures
Author: Abdelhamid Abdelrehim Mahmoud Elshaer
Publisher: Cuvillier Verlag
ISBN: 386727701X
Category :
Languages : en
Pages : 143
Book Description
Publisher: Cuvillier Verlag
ISBN: 386727701X
Category :
Languages : en
Pages : 143
Book Description
Growth and Recovery Kinetics During Molecular Beam Epitaxy
Epitaxial Growth - Principles and Applications: Volume 570
Author: Albert-László Barabási
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 344
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 344
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Epitaxial Growth Part A
Author: J Matthews
Publisher: Elsevier
ISBN: 0323152120
Category : Science
Languages : en
Pages : 401
Book Description
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Publisher: Elsevier
ISBN: 0323152120
Category : Science
Languages : en
Pages : 401
Book Description
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Common Themes and Mechanisms of Epitaxial Growth: Volume 312
Author: Paul Fuoss
Publisher: Materials Research Society
ISBN: 9781558992085
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher: Materials Research Society
ISBN: 9781558992085
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.