Author: Pierre Ruterana Publisher: ISBN: Category : Languages : fr Pages : 198
Book Description
NOUS AVONS SURTOUT UTILISE LE MODE "HAUTE RESOLUTION" SUR UN MICROSCOPE A 200KV. LA RESOLUTION OBTENUE ETAIT DE 2.4 A. LA TECHNIQUE DE PEPARATION D'ECHANTILLONS QUE NOUS AVONS MISE AU POINT POUR L'ETUDE DU PROCEDE DE PASSIVATION (SI::(3)N::(4)/GAAS) NOUS A PERMIS DE CARACTERISER DANS DE TRES BONNES CONDITIONS LES MULTICOUCHES POUR RAYONS X MOUS ET LES HETEROSTRUCTURES DE CROISSANCE EPITAXIALE. CE TRAVAIL FUT UN SUIVI DES PROCEDES EN CONJUGAISON AVEC D'AUTRES TECHNIQUES DE CARACTERISATION. LA COMPARAISON DES RESULTATS DE CES DIVERSES TECHNIQUES NOUS A PERMIS D'APPREHENDER LA CHIMIE ET LA PHYSIQUE DES INTERFACES DANS LES MATERIAUX ETUDIES
Author: P.E. Champness Publisher: Springer Science & Business Media ISBN: 3642661963 Category : Science Languages : en Pages : 574
Book Description
During the last five years transmission electron microscopy (TEM) has added numerous important new data to mineralogy and has considerably changed its outlook. This is partly due to the fact that metallurgists and crystal physicists having solved most of the structural and crystallographic problems in metals have begun to show a widening interest in the much more complicated structures of minerals, and partly to recent progress in experimental techniques, mainly the availability of ion-thinning devices. While electron microscopists have become increasingly interested in minerals (judging from special symposia at recent meetings such as Fifth European Congress on Electron microscopy, Man chester 1972; Eight International Congress on Electron Microscopy, Canberra 1974) mineralogists have realized advantages of the new technique and applied it with increasing frequency. In an effort to coordinate the growing quantity of research, electron microscopy sessions have been included in meetings of mineralogists (e. g. Geological Society of America, Minneapolis, 1972, American Crystallographic Association, Berkeley, 1974). The tremendous response for the TEM symposium which H. -R. Wenk and G. Thomas organized at the Berkeley Conference of the American Crystallographic Association formed the basis for this book. It appeared useful at this stage to summarize the achievements of electron microscopy, scattered in many different journals in several different fields and present them to mineralogists. A group of participants as the Berkeley symposium formed an Editorial Committee and outlined the content of this book.
Author: Joon-Mo Kang Publisher: ISBN: Category : Languages : fr Pages : 272
Book Description
CE TRAVAIL PORTE SUR L'ETUDE DE LA RELAXATION PAR LES DISLOCATIONS D'INTERFACE DANS LES HETEROSTRUCTURES SEMICONDUCTRICES A FORT DESACCORD PARAMETRIQUE. DES CALCULS UTILISANT L'ELASTICITE ANISOTROPE MONTRENT QUE LES DISLOCATIONS D'INTERFACE DE TYPE 90 SONT PLUS EFFICACES POUR LA RELAXATION QUE CELLES DE TYPE 60. LA DIFFERENCE D'EFFICACITE ENTRE LES DEUX AUGMENTE AVEC LE DESACCORD PARAMETRIQUE. CES CALCULS PREVOIENT QU'UN ETAT RELAXE PARTIELLEMENT EST ENERGETIQUEMENT PLUS STABLE QUE CELUI PARFAITEMENT RELAXE. AFIN D'INTERPRETER LES IMAGES DE DISLOCATIONS OBTENUES PAR MICROSCOPIE ELECTRONIQUE EN TRANSMISSION (MET), DES SIMULATIONS ONT ETE EFFECTUEES. CES SIMULATIONS MONTRENT QUE LES FRANGES DE MOIRE MASQUENT D'AUTANT PLUS LE RESEAU DE DISLOCATIONS QUE LE DESACCORD PARAMETRIQUE EST IMPORTANT. LA VISUALISATION SIMULTANEE DE DEUX RESEAUX ORTHOGONAUX DE DISLOCATIONS PAR UNE EXCITATION DU FAISCEAU NON-SYSTEMATIQUE EST CONFIRMEE COMME UNE TECHNIQUE EFFICACE POUR ETUDIER L'ORIGINE DES DEFAUTS. LES CARACTERISATIONS PAR MET EFFECTUEES SUR LES HETEROSTRUCTURES GAAS/SI ET GASB/GAAS MONTRENT QUE LES DEFAUTS DE VOLUME SONT DIRECTEMENT LIES AUX IMPERFECTIONS DU RESEAU DE DISLOCATIONS D'INTERFACE. DES OBSERVATIONS EN MICROSCOPIE ELECTRONIQUE EN HAUTE RESOLUTION MONTRENT PAR AILLEURS DES RELAXATIONS PARTIELLES DANS LES DEUX SYSTEMES
Author: Joël Lépinoux Publisher: Springer Science & Business Media ISBN: 9401140480 Category : Technology & Engineering Languages : en Pages : 540
Book Description
A profusion of research and results on the mechanical behaviour of crystalline solids has followed the discovery of dislocations in the early thirties. This trend has been enhanced by the development of powerful experimental techniques. particularly X ray diffraction. transmission and scanning electron microscopy. microanalysis. The technological advancement has given rise to the study of various and complex materials. not to speak of those recently invented. whose mechanical properties need to be mastered. either for their lise as structural materials. or more simply for detenllining their fonnability processes. As is often the case this fast growth has been diverted both by the burial of early fundamental results which are rediscovered more or less accurately. and by the too fast publication of inaccurate results. which propagate widely. and are accepted without criticism. Examples of these statements abound. and will not be quoted here for the sake of dispassionateness. Understanding the mechanical properties of materials implies the use of various experimental techniques. combined with a good theoretical knowledge of elasticity. thermodynamics and solid state physics. The recent development of various computer techniques (simulation. ab initio calculations) has added to the difficulty of gathering the experimental information. and mastering the theoretical understanding. No laboratory is equipped with all the possible experimental settings. almost no scientist masters all this theoretical kno\vledge. Therefore. cooperation between scientists is needed more than even before.
Book Description
OBSERVATION DES STRUCTURES GAAS/GAAS, ALGAAS/GAAS, GAINP/GAAS ET ISOLANT/SEMICONDUCTEUR. CONTROLE DE LA QUALITE DES COUCHES DEPOSEES ET DES INTERFACES MIS EN JEU. CARACTERISATION DES DEFAUTS DE COMPOSITION CHIMIQUE ET DES DEFAUTS CRISTALLINS
Author: Pierre Ruterana
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Author: P.E. Champness
Author: 
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