Author: S. Jeffrey RosnerPublisher:
ISBN:
Category :
Languages : en
Pages : 280
Book Description
Structural Investigations of the Nucleation and Growth of Gallium Arsenide on Silicon Substrates
Studies of the Nucleation and Growth of Gallium Arsenide on Silicon by Molecular Beam Epitaxy
Author: Stephanie Maxine KochPublisher:
ISBN:
Category :
Languages : en
Pages : 192
Book Description
The Growth of Epitaxial GaAs and GaAlAs on Silicon Substrates by OMVPE.
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
This report covers the period December 1988 to February 1989. The planned work for Quarter 10 was as follows: Continue growth and assessment of Gallium Arsenide/Silicon FET structures; Continue development of low temperature (approx. 900 C) silicon substrate cleaning techniques; Carry out further growth on profiled silicon substrates; Defect reducing experiments using cyclic thermal anneal routines during growth; Study the effect of substrate orientation, on nucleation and initial stages of growth; TEM studies and assessment of defect reducing experiments, nucleation, and initial stages of growth; and Design and fabrication of low complexity structures containing more than one device function. Keywords: Annealing; Crystallographic slip; Field effect transistors; Aluminum gallium arsenides; Organometallic vapor phase epitaxy. (aw).
Scientific and Technical Aerospace Reports
Author: Electrical & Electronics Abstracts
Author: Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1948
Book Description
American Doctoral Dissertations
Author: Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 800
Book Description
Silicon Molecular Beam Epitaxy
Author: E. KasperPublisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Proceedings of the Workshop on Microtechnologies and Applications to Space Systems
Author: Publisher:
ISBN:
Category : Astronautical instruments
Languages : en
Pages : 382
Book Description
Thin films of gallium arsenide on low-cost substrates
Author: Rockwell International. Electronics Research CenterPublisher:
ISBN:
Category :
Languages : en
Pages : 132
Book Description
Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA
Author: Gerald B. StringfellowPublisher: CRC Press
ISBN: 100011225X
Category : Science
Languages : en
Pages : 680
Book Description
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.