Author: C. P. StewartPublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 0
Book Description
Structural and Electrical Studies of Selenium and Silicon Ion Implanted Gallium Arsenide
Author: C. P. StewartPublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 0
Book Description
Encapsulation and Annealing of Ion Implanted Selenium in GaAs
Author: Alexander LidowPublisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 190
Book Description
Radiation Damage and Annealing Effects Studies of Silicon-Implanted Gallium Arsenide
Author: Samuel C. LingPublisher:
ISBN:
Category :
Languages : en
Pages : 15
Book Description
Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author).
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Author: Electrical Characterization of Germanium Implanted Gallium Arsenide
Author: Frank L. PedrottiPublisher:
ISBN:
Category :
Languages : en
Pages : 8
Book Description
The amphoteric electrical properties of germanium single implants into gallium arsenide, and of dual implants of germanium with either gallium or arsenic into gallium arsenide, have been studied. Room temperature implantation was performed for all implanted ions at 120 keV, with doses ranging from 5E12 to 3E15 ions per square centimeter. Implanted samples were annealed with pyrolytic silicon nitride encapsulants at temperatures ranging from 700 to 1000 degrees Celsius. Both p- and n-type layers were observed. Type of conductivity, electrical activation, and carrier mobility were found to depend critically upon ion dose and anneal temperature. The general electrical behavior suggests that in samples of lower dose and anneal temperature, the implanted Ge ions go into As sites preferentially, producing p-type activity, whereas in samples of higher dose and anneal temperature, more Ge ions go into Ga sites, producing n-type activity. Conductivity was found to change from p- to n-type at an intermediate dose of 3E14 ions per square centimeter and at an anneal temperature between 900 and 950 degrees Celsius. It has been determined that additional implantation of As into GaAs:Ge favors Ge occupancy of Ga sites and an enhancement of n-type activity, whereas the additional implantation of Ga encourages Ge occupancy of As sites and an enhancement of p-type activity. Enhancement factors of as much as 8 for p-type activations, and as much as 50 for n-type activations have been measured. (Author).