Structural and Electrical Investigation of the Si-SiO2 Interface in Thermally Oxidized Silicon PDF Download
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Author: B. E. Deal Publisher: ISBN: Category : Languages : en Pages : 47
Book Description
The dependence of fixed oxide charge density (Q sub ss)/q), interface state density (N sub st), and electron spin resonance P sub b signals on thermal oxidation process variables as well as their interrelationship has been investigated. Both n- and p-type silicon substrates having (111) and (100) orientation were employed in this study. Measurement techniques included conventional 1 MHz capacitance-voltage (C-V) analysis, quasistatic C-V analysis, and electron spin resonance. The oxide charges resulting from postoxidation in situ anneal in nitrogen were found to be similar in nature and magnitude to those obtained following a similar treatment in argon. Some reduction in N sub st was observed for thicker oxides following a post-metallization H2 anneal. Strong evidence is obtained for a proportionality between ESR signals and interface states density with varying process parameters modifying the P sub b to N sub st relationship. The effects of iron ion implantation (before or after oxidation) on oxide charges and P sub b signals has also been investigated. This work, in addition to clarifying the relationship between fixed oxide charges, interface states, and ESR P sub b signals, demonstrates the significance of ESR as a tool in the characterization of the Si-SiO2 system. (Author).
Author: B. E. Deal Publisher: ISBN: Category : Languages : en Pages : 47
Book Description
The dependence of fixed oxide charge density (Q sub ss)/q), interface state density (N sub st), and electron spin resonance P sub b signals on thermal oxidation process variables as well as their interrelationship has been investigated. Both n- and p-type silicon substrates having (111) and (100) orientation were employed in this study. Measurement techniques included conventional 1 MHz capacitance-voltage (C-V) analysis, quasistatic C-V analysis, and electron spin resonance. The oxide charges resulting from postoxidation in situ anneal in nitrogen were found to be similar in nature and magnitude to those obtained following a similar treatment in argon. Some reduction in N sub st was observed for thicker oxides following a post-metallization H2 anneal. Strong evidence is obtained for a proportionality between ESR signals and interface states density with varying process parameters modifying the P sub b to N sub st relationship. The effects of iron ion implantation (before or after oxidation) on oxide charges and P sub b signals has also been investigated. This work, in addition to clarifying the relationship between fixed oxide charges, interface states, and ESR P sub b signals, demonstrates the significance of ESR as a tool in the characterization of the Si-SiO2 system. (Author).
Author: Yves J. Chabal Publisher: Springer Science & Business Media ISBN: 3642567118 Category : Technology & Engineering Languages : en Pages : 269
Book Description
Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Author: B.E. Deal Publisher: Springer Science & Business Media ISBN: 1489915885 Category : Science Languages : en Pages : 505
Book Description
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Author: P. Balk Publisher: Elsevier Publishing Company ISBN: Category : Science Languages : en Pages : 376
Book Description
The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Author: Eric Garfunkel Publisher: Springer Science & Business Media ISBN: 9401150087 Category : Technology & Engineering Languages : en Pages : 503
Book Description
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Author: B. E. Deal
Author: B. E. Deal
Author: Hisham Z. Massoud
Author: Yves J. Chabal
Author: Else Kooi
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Author: B.E. Deal
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Author: P. Balk
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Author: Eric Garfunkel