Stress-Induced Phenomena in Metallization PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Stress-Induced Phenomena in Metallization PDF full book. Access full book title Stress-Induced Phenomena in Metallization by Paul S. Ho. Download full books in PDF and EPUB format.
Author: Paul S. Ho Publisher: American Institute of Physics ISBN: Category : Science Languages : en Pages : 250
Book Description
This symposium focuses on new developments in the fields of experimental and theoretical nuclear physics, including nuclear dynamics, nuclear structure including hypernuclei, nuclear matter, nuclear astrophysics, applications. The participants also reported on the innovative instrumentation, including future large-scale facility both in Japan and Italy that will be essential for future studies.
Author: Paul S. Ho Publisher: American Institute of Physics ISBN: Category : Science Languages : en Pages : 250
Book Description
This symposium focuses on new developments in the fields of experimental and theoretical nuclear physics, including nuclear dynamics, nuclear structure including hypernuclei, nuclear matter, nuclear astrophysics, applications. The participants also reported on the innovative instrumentation, including future large-scale facility both in Japan and Italy that will be essential for future studies.
Author: Ehrenfried Zschech Publisher: American Institute of Physics ISBN: Category : Science Languages : en Pages : 394
Book Description
These proceedings present current research on issues related to stress-induced phenomena in on-chip metal interconnects and solder joints. The volume will appeal to scientists, engineers, graduate students interested in research and development of microelectronic devices as well as technology integration, and semiconductor industry professionals and equipment suppliers.
Author: Ehrenfried Zschech Publisher: American Institute of Physics ISBN: 9780735403109 Category : Science Languages : en Pages : 392
Book Description
These proceedings present current research on issues related to stress-induced phenomena in on-chip metal interconnects and solder joints. The volume will appeal to scientists, engineers, graduate students interested in research and development of microelectronic devices as well as technology integration, and semiconductor industry professionals and equipment suppliers.
Author: Ehrenfried Zschech Publisher: American Inst. of Physics ISBN: 9780735408555 Category : Technology & Engineering Languages : en Pages : 0
Book Description
One current challenge to micro- and nanoelectronics is the understanding of stress-related phenomena in metallization. Stresses arising in on-chip and 3D metal interconnects and in the surrounding materials due to thermal mismatch, microstructure changes or process integration as well as electromigration can lead to degradation and failure of microelectronic products. The implementation of low dielectric constant materials into the inlaid copper backend-of-line process has brought new challenges for process integration and reliability. Understanding stress-related phenomena in new materials used for 3D integration and packaging, particularly using through silicon vias and microbumps, is critical for future microelectronic products. The Proceedings summarize new research results and advances in basic understanding of stress-induced phenomena in metallization. In addition to experimental studies, modelling and simulation capabilities are demonstrated to evaluate the effect of stress on product performance and reliability. Stress-related phenomena in 3D IC interconnects are covered too.
Author: P. S. Ho Publisher: A I P Press ISBN: Category : Science Languages : en Pages : 300
Book Description
Continuing the spirit of the previous workshops, the proceedings contain new research results and advances in basic understanding of stress-induced phenomena in metallization. The current technology drive to implement low dielectric constant materials into copper metallization has brought new and significant challenges in process integration and reliability. Stresses arising in metallizations and surrounding dielectric structures due to thermal mismatch, electromigration, microstructure changes or process integration can lead to damage and failure of interconnect structures. Understanding stress-related phenomena in new materials and structures becomes critical for reliability improvement and metallization development. This is reflected in the papers included in the proceedings, which report results on electromigration, thermal stresses and void formation in copper-low k interconnect structures. The book also includes new results on fracture of low k dielectric structures, an important research area for reliability and integration of copper metallization.
Author: Paul S. Ho
Author: Paul S. Ho
Author: Ehrenfried Zschech
Author: American Institute of Physics
Author: Shinichi Ogawa
Author: Ehrenfried Zschech
Author: Ehrenfried Zschech
Author: No
Author: 
Author: P. S. Ho
Author: Paul S. Ho