Strained Ge and GeSn Band Engineering for Si Photonic Integrated Circuits PDF Download

Author: Yijie Huo
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 139

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Book Description
The on-chip interconnect bandwidth limitation is becoming an increasingly critical challenge for integrated circuits (ICs) as device scaling continues to push the speed and density of ICs. Silicon photonics has the ability to solve this emerging problem due to its high speed, high bandwidth, low power consumption, and ability to be monolithically integrated on silicon. Most of the key devices for Si photonic ICs have already been demonstrated. However, a practical CMOS compatible coherent light source is still a major challenge. Germanium (Ge) has already been demonstrated to be a promising material for optoelectronic devices, such as photo-detectors and modulators. However, Ge is an indirect band gap semiconductor, which makes Ge-based light sources very inefficient and limits their practical use. Fortunately, the direct [uppercase Gamma] valley of the Ge conduction band is only 0.14 eV higher than the indirect L valley, suggesting that with band-structure engineering, Ge has the potential to become a direct band gap material and an efficient light emitter. In this dissertation, we first discuss our work on highly biaxial tensile strained Ge grown by molecular beam epitaxy (MBE). Relaxed step-graded InGaAs buffer layers, which are prepared with low temperature growth and high temperature annealing, are used to provide a larger lattice constant substrate to produce tensile strain in Ge epitaxial layers. Up to 2.3% in-plane biaxial tensile strained thin Ge epitaxial layers were achieved with smooth surfaces and low threading dislocation density. A strong increase of photoluminescence with highly tensile strained Ge layers at low temperature suggests that a direct band gap semiconductor has been achieved. This dissertation also presents our work on more than 9% Sn incorporation in epitaxial GeSn alloys using a low temperature MBE growth method. This amount of Sn is 10 times greater than the solid-solubility of Sn in crystalline Ge. Material characterization shows good crystalline quality without Sn precipitation or phase segregation. With increasing Sn percentage, direct band gap narrowing is observed by optical transmission measurements. The studies described in this dissertation will help enable efficient germanium based CMOS compatible coherent light sources. Other possible applications of this work are also discussed in the concluding chapter.