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Author: Thomas D Swinburne Publisher: Springer ISBN: 3319200194 Category : Science Languages : en Pages : 110
Book Description
This thesis is concerned with establishing a rigorous, modern theory of the stochastic and dissipative forces on crystal defects, which remain poorly understood despite their importance in any temperature dependent micro-structural process such as the ductile to brittle transition or irradiation damage. The author first uses novel molecular dynamics simulations to parameterise an efficient, stochastic and discrete dislocation model that allows access to experimental time and length scales. Simulated trajectories are in excellent agreement with experiment. The author also applies modern methods of multiscale analysis to extract novel bounds on the transport properties of these many body systems. Despite their successes in coarse graining, existing theories are found unable to explain stochastic defect dynamics. To resolve this, the author defines crystal defects through projection operators, without any recourse to elasticity. By rigorous dimensional reduction, explicit analytical forms are derived for the stochastic forces acting on crystal defects, allowing new quantitative insight into the role of thermal fluctuations in crystal plasticity.
Author: Thomas D Swinburne Publisher: Springer ISBN: 3319200194 Category : Science Languages : en Pages : 110
Book Description
This thesis is concerned with establishing a rigorous, modern theory of the stochastic and dissipative forces on crystal defects, which remain poorly understood despite their importance in any temperature dependent micro-structural process such as the ductile to brittle transition or irradiation damage. The author first uses novel molecular dynamics simulations to parameterise an efficient, stochastic and discrete dislocation model that allows access to experimental time and length scales. Simulated trajectories are in excellent agreement with experiment. The author also applies modern methods of multiscale analysis to extract novel bounds on the transport properties of these many body systems. Despite their successes in coarse graining, existing theories are found unable to explain stochastic defect dynamics. To resolve this, the author defines crystal defects through projection operators, without any recourse to elasticity. By rigorous dimensional reduction, explicit analytical forms are derived for the stochastic forces acting on crystal defects, allowing new quantitative insight into the role of thermal fluctuations in crystal plasticity.
Author: Rob Phillips Publisher: Cambridge University Press ISBN: 9780521793575 Category : Mathematics Languages : en Pages : 810
Book Description
Examines the advances made in the field in recent years and looks at the various methods now used; ideal for graduate students and researchers.
Author: Robert A. Vardanian Publisher: ISBN: Category : Mathematics Languages : en Pages : 264
Book Description
Dislocations in solids are peculiar among numerous defects in the crystal lattice. From the viewpoint of dimensionality, dislocation represents one-dimensional defect, translationally invariant along its axis. Physically, it is a topological defect, i.e. a fictitious formation violating the lattice symmetry. As a result, dislocations have a significant effect on various electric and optical characteristics of metals, as well as semiconductors. This book reviews the state of experiment and theory concerning the principal mechanisms of dislocational motion. Depending on the value of applied load, dislocation dynamics is considered in the Peierls potential relief, random field of point defects, or under interaction with free electrons.
Author: John D. Clayton Publisher: Springer ISBN: 9789400703513 Category : Technology & Engineering Languages : en Pages : 700
Book Description
This book describes behavior of crystalline solids primarily via methods of modern continuum mechanics. Emphasis is given to geometrically nonlinear descriptions, i.e., finite deformations. Primary topics include anisotropic crystal elasticity, plasticity, and methods for representing effects of defects in the solid on the material's mechanical response. Defects include crystal dislocations, point defects, twins, voids or pores, and micro-cracks. Thermoelastic, dielectric, and piezoelectric behaviors are addressed. Traditional and higher-order gradient theories of mechanical behavior of crystalline solids are discussed. Differential-geometric representations of kinematics of finite deformations and lattice defect distributions are presented. Multi-scale modeling concepts are described in the context of elastic and plastic material behavior. Representative substances towards which modeling techniques may be applied are single- and poly- crystalline metals and alloys, ceramics, and minerals. This book is intended for use by scientists and engineers involved in advanced constitutive modeling of nonlinear mechanical behavior of solid crystalline materials. Knowledge of fundamentals of continuum mechanics and tensor calculus is a prerequisite for accessing much of the text. This book could be used as supplemental material for graduate courses on continuum mechanics, elasticity, plasticity, micromechanics, or dislocation mechanics, for students in various disciplines of engineering, materials science, applied mathematics, and condensed matter physics.
Author: Wei Cai Publisher: Cambridge University Press ISBN: 1107123135 Category : Science Languages : en Pages : 535
Book Description
An accessible textbook providing students with a working knowledge of the properties of defects in crystals, in a step-by-step tutorial style.
Author: Richard Catlow Publisher: Springer Science & Business Media ISBN: 9401119422 Category : Science Languages : en Pages : 511
Book Description
The study of defects and disorder in solids remains a central topic in solid state science. Developments in the field continue to be promoted by new experimental and theoretical techniques, while further impetus for the study of disorder in solids is provided by the growing range of applications of solid state materials in which disorder at the atomic level plays a crucial rOle. In this book we attempt to present a survey of fundamental and applied aspects of the field. We consider the basic aspects of defective crystalline and amorphous solids. We discuss recent studies of structural, electronic, transport, thermodynamic and spectroscopic properties of such materials. Experimental and theoretical methodologies are reviewed, and detailed consideration is given to materials such as fast ion conductors and amorphous semiconductors that are of importance in an applied context. Any survey of this large field is necessarily selective. We have chosen to emphasise insulating (especially oxidic) and semi-conducting materials. But many of the approaches and techniques we describe apply generally across the entire field of solid state science. This volume is based on a NATO ASI held at the Residencia Santa Teresa de Jesus, Madrid in September 1991. The Editor is grateful to the NATO Scientific Affairs Division for their sponsorship of this School. Thanks are also due to all who participated in and lectured at the school, but especially to the organising committee of A. V. Chadwick, G. N. Greaves, M. Grigorkiewicz, J. H. Harding and S. Kalbitzer. C. R. A.
Author: Anthony Kelly Publisher: John Wiley & Sons ISBN: 1119420172 Category : Science Languages : en Pages : 584
Book Description
The classic book that presents a unified approach to crystallography and the defects found within crystals, revised and updated This new edition of Crystallography and Crystal Defects explains the modern concepts of crystallography in a clear, succinct manner and shows how to apply these concepts in the analyses of point, line and planar defects in crystalline materials. Fully revised and updated, this book now includes: Original source references to key crystallographic terms familiar to materials scientists Expanded discussion on the elasticity of cubic materials New content on texture that contains more detail on Euler angles, orientation distribution functions and an expanded discussion on examples of textures in engineering materials Additional content on dislocations in materials of symmetry lower than cubic An expanded discussion of twinning which includes the description and classification of growth twins The inclusion and explanation of results from atomistic modelling of twin boundaries Problem sets with new questions, detailed worked solutions, supplementary lecture material and online computer programs for crystallographic calculations. Written by authors with extensive lecturing experience at undergraduate level, Crystallography and Crystal Defects, Third Edition continues to take its place as the core text on the topic and provides the essential resource for students and researchers in metallurgy, materials science, physics, chemistry, electrical, civil and mechanical engineering.
Author: Walter Bollmann Publisher: Springer Science & Business Media ISBN: 3642491731 Category : Science Languages : en Pages : 264
Book Description
It is nonnal for the preface to explain the motivation behind the writing of the book. Since many good books dealing with the general theory of crystal defects already exist, a new book has to be especially justified, and here its main justification lies in its treatment of crystal line interfaces. About 1961, the work of the author, essentially based on the fundamental work of Professor F. C. Frank, started to branch away from the main flow of thought in this field and eventually led to a general geometrical theory which is presented as a whole for the first time in this book. Although nearly all that is presented has already been published in different journals and symposia, it might be difficult for the reader to follow that literature, as a new terminology and new methods of analysis had to be developed. Special emphasis is given to discussion and many diagrams are included in order that a clear view of the basic concepts be obtained. Intennediate summaries try to bring out the main points of the chapters. Instead of specific exercises, general suggestions for them are given. The part up to chapter 9 is considered more or less as introductory, so that the book can be studied without specific knowledge of crystals and crystal defects. The presentation of that part developed out of lectures given by the author at the Swiss Federal Institute of Technology (ETH) in Zurich.
Author: Thomas D Swinburne
Author: Thomas D Swinburne
Author: Rob Phillips
Author: Robert A. Vardanian
Author: John D. Clayton
Author: Wei Cai
Author: Richard Catlow
Author: Alberto de Lózar Muñoz
Author: Anthony Kelly
Author: Cristian Teodosiu
Author: Walter Bollmann