Author: Electrochemical Society. Electronics DivisionPublisher: The Electrochemical Society
ISBN: 9781566773690
Category : Technology & Engineering
Languages : en
Pages : 380
Book Description
State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II
Author: Electrochemical Society. Electronics DivisionPublisher: The Electrochemical Society
ISBN: 9781566773690
Category : Technology & Engineering
Languages : en
Pages : 380
Book Description
State-of-the-Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III
Author: Edward B. StokesPublisher: The Electrochemical Society
ISBN: 9781566773492
Category : Technology & Engineering
Languages : en
Pages : 292
Book Description
State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V
Author: H. M. NgPublisher: The Electrochemical Society
ISBN: 9781566774192
Category : Technology & Engineering
Languages : en
Pages : 616
Book Description
State-of-the-Art Program on Compound Semiconductors XXXVII (SOTAPOCS XXXVII), and Narrow Bandgap Optoelectronic Materials and Devices
Author: P. C. ChangPublisher: The Electrochemical Society
ISBN: 9781566773362
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
GaN-based Materials and Devices
Author: Michael ShurPublisher: World Scientific
ISBN: 9812388443
Category : Technology & Engineering
Languages : en
Pages : 295
Book Description
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8
Author: J. WangPublisher: The Electrochemical Society
ISBN: 156677571X
Category : Compound semiconductors
Languages : en
Pages : 300
Book Description
This issue contains the proceedings of both invited and contributed talks at the 47th State-Of-The-Art Programs on Compound Semiconductors (SOTAPOCS) symposium, and of the 8th Symposium on Wide Bandgap Semiconductors and Devices. The topics in this issue include some of the latest progress in compound and wide bandgap semiconductor development in fabrication processes, materials, characterization, devices, and reliability.
BioNanoFluidic MEMS
Author: Peter J. HeskethPublisher: Springer Science & Business Media
ISBN: 038746283X
Category : Technology & Engineering
Languages : en
Pages : 300
Book Description
This book explains biosensor development fundamentals. It also initiates awareness in engineers and scientists who would like to develop and implement novel biosensors for agriculture, biomedicine, homeland security, environmental needs, and disease identification. In addition, the book introduces and lays the basic foundation for design, fabrication, testing, and implementation of next generation biosensors through hands-on learning.
Failure-Free Integrated Circuit Packages
Author: Charles CohnPublisher: McGraw Hill Professional
ISBN: 9780071434843
Category : Technology & Engineering
Languages : en
Pages : 394
Book Description
The shrinking of integrated circuits (ICs) puts tremendous stress on overall device reliability. This unique treatment uses graphic illustration to clearly identify all major failure mode types, so engineers can spot failures before they occur.
Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815
Author: Michael DudleyPublisher: Cambridge University Press
ISBN: 9781558997653
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300ºC, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.
Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815
Author: Materials Research Society. MeetingPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.