Author: H. M. NgPublisher: The Electrochemical Society
ISBN: 9781566774192
Category : Technology & Engineering
Languages : en
Pages : 616
Book Description
State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V
Author: H. M. NgPublisher: The Electrochemical Society
ISBN: 9781566774192
Category : Technology & Engineering
Languages : en
Pages : 616
Book Description
Indium Nitride and Related Alloys
Author: Timothy David VealPublisher: CRC Press
ISBN: 1439859612
Category : Technology & Engineering
Languages : en
Pages : 707
Book Description
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Iii-nitride Semiconductor Materials
Author: Zhe Chuan FengPublisher: World Scientific
ISBN: 1908979941
Category : Technology & Engineering
Languages : en
Pages : 442
Book Description
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth
Author: Hadis MorkoçPublisher: John Wiley & Sons
ISBN: 3527628460
Category : Technology & Engineering
Languages : en
Pages : 1311
Book Description
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Molecular Beam Epitaxial Growth and Characterization of the Manganese-based Heusler Alloy Films for Application in Spintronics
Author: Xuying DongJournal of the Electrochemical Society
Author: Fifth Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics
Author: Dilute III-V Nitride Semiconductors and Material Systems
Author: Ayse ErolPublisher: Springer Science & Business Media
ISBN: 3540745297
Category : Technology & Engineering
Languages : en
Pages : 607
Book Description
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Dilute III-V Nitride Semiconductors and Material Systems
Author: Ayse ErolPublisher: Springer
ISBN: 9783540842996
Category : Technology & Engineering
Languages : en
Pages : 592
Book Description
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Physics of Wurtzite Nitrides and Oxides
Author: Bernard GilPublisher:
ISBN: 9783319068060
Category :
Languages : en
Pages : 280
Book Description