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Author: Oleksandr Malik Publisher: ISBN: Category : Technology Languages : en Pages :
Book Description
High-quality indium tin oxide (ITO) films have been fabricated using a DC sputtering technique in a pure argon atmosphere with a postannealing in an oxygen environment at atmosphere pressure. Structural, morphological, and electro-optical parameters of the ITO films were studied at different annealing temperatures for the films fabricated on two types of glass substrates, soda lime and alkali-free substrates. A comparative analysis shows that low-cost soda lime substrates are suitable for the fabrication of high-quality nanocrystalline ITO films after annealing them at 300°C. This result is of great importance for reducing the cost of thin film solar cells, in which ITO films serve as transparent conducting electrodes. We present a comparison of the properties of sputtered ITO films with those fabricated using a spray pyrolysis deposition technique, which is useful for some optoelectronic applications.
Author: Oleksandr Malik Publisher: ISBN: Category : Technology Languages : en Pages :
Book Description
High-quality indium tin oxide (ITO) films have been fabricated using a DC sputtering technique in a pure argon atmosphere with a postannealing in an oxygen environment at atmosphere pressure. Structural, morphological, and electro-optical parameters of the ITO films were studied at different annealing temperatures for the films fabricated on two types of glass substrates, soda lime and alkali-free substrates. A comparative analysis shows that low-cost soda lime substrates are suitable for the fabrication of high-quality nanocrystalline ITO films after annealing them at 300°C. This result is of great importance for reducing the cost of thin film solar cells, in which ITO films serve as transparent conducting electrodes. We present a comparison of the properties of sputtered ITO films with those fabricated using a spray pyrolysis deposition technique, which is useful for some optoelectronic applications.
Author: Sergei Pyshkin Publisher: BoD – Books on Demand ISBN: 9535133691 Category : Technology & Engineering Languages : en Pages : 374
Book Description
Optoelectronics - Advanced Device Structures (Book IV) is following the Optoelectronics (Books I, II, and III) published in 2011, 2013, and 2015, as part of the InTech collection of international works on optoelectronics. Accordingly, as with the first three books of the collection, this book covers recent achievements by specialists around the world. The growing number of countries participating in this endeavor as well as joint participation of the US and Moldova scientists in edition of this book testifies to the unifying effect of science. An interested reader will find in the book the description of properties and applications employing organic and inorganic materials, as well as the methods of fabrication and analysis of operation and regions of application of modern optoelectronic devices.
Author: Philip Infante Publisher: ISBN: Category : Indium Languages : en Pages : 212
Book Description
Indium tin oxide (ITO) is a widely used transparent conductor due to its ability to ofer higher conductance and better etch ability over other transparent conductors. ITO has been utilized as transparent electrodes in liquid crystal displays and heterojunction solar cells, as transparent heat reflecting films, as the sensing medium in gas sensors, and in optoelectronic device applications. In general, these films are characterized by high transparency in the visible spectra, high reflectance in the IR and absorption in the UV regions, and near metallic conductivity.
Author: Gillian Hagen Publisher: ISBN: Category : Languages : en Pages :
Book Description
This study addresses a current limitation in the development of high performance organic optoelectronic devices: depositing indium tin oxide (ITO), a transparent, conductive film, without damage to underlying organic films. ITO is deposited with a plasma sputter deposition process which causes damage to organic films. Previous research demonstrates that damage can be reduced with a sputtering configuration with substrates placed perpendicular to two facing guns. We employ fluorescent organic material Alq3 (tris-(8-hydroxyquinoline)aluminum) to explore damage caused by radio-frequency facing-target magnetron plasma sputtering by means of photoluminescence spectroscopy. We present an investigation of the degree to which Alq3 is damaged in the plasma sputtering process. We explore the dependence of the damage on the rate of growth. We evaluate the effects of closing the sputter system shutter to eliminate direct plasma exposure as well as the effect of employing a BPhen (bathophenanthroline) protective layer. We find that facing-target sputtering can be performed at a high growth rate without causing significantly more damage than that caused when sputtering is performed at a low growth rate, with only a 10% reduction in PL from a rate of 0.2 ̊A/s to 2.4 ̊A/s. We demonstrate that the greatest amount of damage occurs at the start of plasma sputtering. The BPhen protective layer is shown to mitigate damage to the surface of the organic material by exposure to gaseous ions.
Author: Öcal Tuna Publisher: LAP Lambert Academic Publishing ISBN: 9783838365695 Category : Languages : en Pages : 100
Book Description
In this study Indium Tin Oxide (ITO) thin films were grown by both DC and RF magnetron sputtering techniques. To know deposition rate of ITO, system was calibrated for both DCMS and RFMS and then ITO were grown on glass substrate with the thickness of 70 nm and 40 nm by changing substrate temperature. The effect of substrate temperature, film thickness and sputtering method on structural, electrical and optical properties were investigated. The results show that substrate temperature and film thickness substantially affects the film properties, especially crystallization and resistivity. The thin films grown at the lower than 150 oC showed amorphous structure. However, crystallization was detected with the furtherincrease of substrate temperature. Band gap of ITO was calculated to be about 3.64eV at the substrate temperature of 150 oC, and itwidened with substrate temperature increment. From electrical measurements the resistivity at room temperature was obtained 1.28x10-4 and 1.29x10-4 D-cm, for DC and RF sputtered films, respectively. We also measured temperature dependence resistivity and the Hall coefficient of the films, and we calculated carrier concentration and Hall mobility."
Author: Oleksandr Malik
Author: Oleksandr Malik
Author: Sergei Pyshkin
Author: Mohamad Helmi Abd. Mubin
Author: Dr. B. Radhakrishna
Author: Philip Infante
Author: Gillian Hagen
Author: Joseph M. Schmalhorst
Author: Teck-Shiun Lim
Author: Nickolas R. Greenland
Author: Öcal Tuna