Author: Michael C. DriverPublisher:
ISBN:
Category :
Languages : en
Pages : 97
Book Description
Special Issue on III-V Compound Semiconductor Processing
Author: Michael C. DriverCharacterization in Compound Semiconductor Processing
Author: Yale StrausserPublisher: Momentum Press
ISBN: 1606500414
Category : Technology & Engineering
Languages : en
Pages : 217
Book Description
"Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.
Surfaces of II-VI Compound Semiconductor Devices
Author: Institute of Physics (Great Britain)Publisher:
ISBN:
Category :
Languages : en
Pages : 112
Book Description
Compound Semiconductor Integrated Circuits
Author: Tho T VuPublisher: World Scientific
ISBN: 9814486434
Category : Technology & Engineering
Languages : en
Pages : 363
Book Description
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies.
III-V Compound Semiconductors
Author: Tingkai LiPublisher: CRC Press
ISBN: 1439815232
Category : Science
Languages : en
Pages : 588
Book Description
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Special Issue on Semiconductor Materials and Processing Technology
Author: Characterization in Compound Semiconductor Processing
Author: Gary E. McGuirePublisher: Momentum Press
ISBN: 1606500430
Category : Technology & Engineering
Languages : en
Pages : 217
Book Description
Compound semiconductors such as Gallium Arsenide, Gallium Aluminum Arsenide, and Indium Phosphide are often difficult to characterize and present a variety of challenges from substrate preparation, to epitaxial growth to dielectric film deposition to dopant introduction. This book reviews the common classes of compound semiconductors, their physical, optical and electrical properties and the various types of methods used for characterizing them when analyzing for defects and application problems. The book features: -- Characterization of III-V Thin Films for Electronic and Optical applications -- Characterization of Dielectric Insulating Film layers -- A Special case study on Deep Level Transient Spectroscopy on GaAs -- Concise summaries of major characterization technologies for compound semiconductor materials, including Auger Electron Spectroscopy, Ballistic Electron Emission Microscopy, Energy-Dispersive X-Ray Spectroscopy, Neutron Activation Analysis and Raman Spectroscopy
Advanced III-V Compound Semiconductor Growth, Processing and Devices: Volume 240
Author: S. J. PeartonPublisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 944
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Physics and Chemistry of III-V Compound Semiconductor Interfaces
Author: Carl WilmsenPublisher: Springer Science & Business Media
ISBN: 1468448358
Category : Science
Languages : en
Pages : 472
Book Description
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Special Issue on "Surfaces of II-VI Compound Semiconductor Devices."
Author: Institute of Physics (Great Britain)Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 127
Book Description