Index to IEEE Publications PDF Download

Author: Institute of Electrical and Electronics Engineers
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1260

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Book Description

Author: Chi H. Lee
Publisher: CRC Press
ISBN: 1351832484
Category : Technology & Engineering
Languages : en
Pages : 499

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Book Description
Microwave photonics continues to see rapid growth. The integration of optical fiber and wireless networks has become a commercial reality and is becoming increasingly pervasive. Such hybrid technology will lead to many innovative applications, including backhaul solutions for mobile networks and ultrabroadband wireless networks that can provide users with very high bandwidth services. Microwave Photonics, Second Edition systematically introduces important technologies and applications in this emerging field. It also reviews recent advances in micro- and millimeter-wavelength and terahertz-frequency systems. The book features contributions by leading international researchers, many of whom are pioneers in the field. They examine wave generation, measurement, detection, control, and propagation in detail, as well as the devices and components that enable ultrawide-band and ultrafast transmission, switching, and signal processing. These devices and components include optical-controlled microwave devices, optical transmitters, receivers, switching devices, detectors, and modulators. The book explores the theory, techniques, and technologies that are fueling applications such as radio-over-fiber, injection-locked semiconductor lasers, and terahertz photonics. Throughout, the contributors share insights on overcoming current limitations and on potential developments. What’s New in This Edition Two new chapters, on fiber Bragg gratings for microwave photonics applications and ultrawide-band sub-THz photonic wireless links Updates throughout, reflecting advances in the field New illustrations in each chapter Fully illustrated with more than 300 figures and tables, this book offers a detailed, wide-ranging overview of the current state and future directions of this burgeoning technology.

Author: Chi H. Lee
Publisher: CRC Press
ISBN: 146650286X
Category : Technology & Engineering
Languages : en
Pages : 499

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Book Description
Microwave photonics continues to see rapid growth. The integration of optical fiber and wireless networks has become a commercial reality and is becoming increasingly pervasive. Such hybrid technology will lead to many innovative applications, including backhaul solutions for mobile networks and ultrabroadband wireless networks that can provide users with very high bandwidth services. Microwave Photonics, Second Edition systematically introduces important technologies and applications in this emerging field. It also reviews recent advances in micro- and millimeter-wavelength and terahertz-frequency systems. The book features contributions by leading international researchers, many of whom are pioneers in the field. They examine wave generation, measurement, detection, control, and propagation in detail, as well as the devices and components that enable ultrawide-band and ultrafast transmission, switching, and signal processing. These devices and components include optical-controlled microwave devices, optical transmitters, receivers, switching devices, detectors, and modulators. The book explores the theory, techniques, and technologies that are fueling applications such as radio-over-fiber, injection-locked semiconductor lasers, and terahertz photonics. Throughout, the contributors share insights on overcoming current limitations and on potential developments. What’s New in This Edition Two new chapters, on fiber Bragg gratings for microwave photonics applications and ultrawide-band sub-THz photonic wireless links Updates throughout, reflecting advances in the field New illustrations in each chapter Fully illustrated with more than 300 figures and tables, this book offers a detailed, wide-ranging overview of the current state and future directions of this burgeoning technology.

Author:
Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 650

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Book Description

Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 1162

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Book Description

Author: Catherine Vander Velde
Publisher: World Scientific
ISBN: 9814547700
Category :
Languages : en
Pages : 1042

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Book Description

Author: National Semiconductor Metrology Program (U.S.)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 120

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Book Description

Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 160

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Book Description

Author: Steven J. Isakowitz
Publisher: AIAA
ISBN: 9781563473531
Category : Reference
Languages : en
Pages : 622

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Book Description
This best-selling reference guide contains the most reliable and up-to-date material on launch programs in Brazil, China, Europe, India, Israel, Japan, Russia, Ukraine, and the United States. Packed with illustrations and figures, the third edition has been extensively updated and expanded, and offers a quick and easy data retrieval source for policymakers, planners, engineers, launch buyers, and students.

Author: Gunter Kompa
Publisher: Artech House
ISBN: 1630817457
Category : Technology & Engineering
Languages : en
Pages : 609

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Book Description
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.