Special Issue: Ferroelectric Films PDF Download

Author: S. Bauer
Publisher:
ISBN:
Category :
Languages : en
Pages : 70

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Book Description

Author: Sidney B. Lang
Publisher: Springer Science & Business Media
ISBN: 0387380396
Category : Technology & Engineering
Languages : en
Pages : 275

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Book Description
This book presents theory, fundamentals and applications of ferroelectricy. 24 chapters gather reviews and research reports covering the spectrum of ferroelectricity. It describes the current levels of understanding of various aspects of ferroelectricity as presented by authorities in the field. Topics include relaxors, piezoelectrics, microscale and nanoscale studies, polymers and composites, unusual properties, and techniques and devices. The book is intended for physicists, engineers and materials scientists working with ferroelectric materials.

Author: Sunggi Baik
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Mickaël Lallart
Publisher: BoD – Books on Demand
ISBN: 9533074566
Category : Science
Languages : en
Pages : 266

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Book Description
Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the application of ferroelectric devices to innovative systems. In particular, the use of these materials as varying capacitors, gyroscope, acoustics sensors and actuators, microgenerators and memory devices will be exposed, providing an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric devices.

Author: Tony Schenk
Publisher: BoD – Books on Demand
ISBN: 3743127296
Category : Technology & Engineering
Languages : en
Pages : 194

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Book Description
In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.

Author: Uwe Schroeder
Publisher: Woodhead Publishing
ISBN: 0081024312
Category : Technology & Engineering
Languages : en
Pages : 572

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Book Description
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Author: Peter Günter
Publisher: CRC Press
ISBN: 9782881243844
Category :
Languages : en
Pages : 444

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Book Description

Author: A. S. Bhalla
Publisher: CRC Press
ISBN: 9782881244308
Category : Science
Languages : en
Pages : 446

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Book Description

Author:
Publisher:
ISBN:
Category : Ferroelectric crystals
Languages : en
Pages : 223

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Book Description

Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598

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Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.