Author: Chenming Hu
Publisher: Prentice Hall
ISBN: 0136085253
Category : Integrated circuits
Languages : en
Pages : 387
Book Description
Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers. "
Modern Semiconductor Devices for Integrated Circuits
Author: Chenming Hu
Publisher: Prentice Hall
ISBN: 0136085253
Category : Integrated circuits
Languages : en
Pages : 387
Book Description
Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers. "
Publisher: Prentice Hall
ISBN: 0136085253
Category : Integrated circuits
Languages : en
Pages : 387
Book Description
Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers. "
Electronic Devices and Circuit Fundamentals, Solution Manual
Author: Dale R Patrick
Publisher: CRC Press
ISBN: 1000897079
Category : Technology & Engineering
Languages : en
Pages : 164
Book Description
Devices and Circuit Fundamentals is: • Chapter Outline • Learning Objectives • Key Terms • Figure List • Chapter Summary • Formulas • Answers to Examples / Self-Exams • Glossary of Terms (defined)
Publisher: CRC Press
ISBN: 1000897079
Category : Technology & Engineering
Languages : en
Pages : 164
Book Description
Devices and Circuit Fundamentals is: • Chapter Outline • Learning Objectives • Key Terms • Figure List • Chapter Summary • Formulas • Answers to Examples / Self-Exams • Glossary of Terms (defined)
Semiconductor Physics and Devices
Author: Donald A. Neamen
Publisher:
ISBN: 9780071198622
Category : Semiconductores
Languages : en
Pages : 746
Book Description
This text aims to provide the fundamentals necessary to understand semiconductor device characteristics, operations and limitations. Quantum mechanics and quantum theory are explored, and this background helps give students a deeper understanding of the essentials of physics and semiconductors.
Publisher:
ISBN: 9780071198622
Category : Semiconductores
Languages : en
Pages : 746
Book Description
This text aims to provide the fundamentals necessary to understand semiconductor device characteristics, operations and limitations. Quantum mechanics and quantum theory are explored, and this background helps give students a deeper understanding of the essentials of physics and semiconductors.
Semiconductor Devices
Author: James Fiore
Publisher:
ISBN: 9781796543537
Category :
Languages : en
Pages : 407
Book Description
Across 15 chapters, Semiconductor Devices covers the theory and application of discrete semiconductor devices including various types of diodes, bipolar junction transistors, JFETs, MOSFETs and IGBTs. Applications include rectifying, clipping, clamping, switching, small signal amplifiers and followers, and class A, B and D power amplifiers. Focusing on practical aspects of analysis and design, interpretations of device data sheets are integrated throughout the chapters. Computer simulations of circuit responses are included as well. Each chapter features a set of learning objectives, numerous sample problems, and a variety of exercises designed to hone and test circuit design and analysis skills. A companion laboratory manual is available. This is the print version of the on-line OER.
Publisher:
ISBN: 9781796543537
Category :
Languages : en
Pages : 407
Book Description
Across 15 chapters, Semiconductor Devices covers the theory and application of discrete semiconductor devices including various types of diodes, bipolar junction transistors, JFETs, MOSFETs and IGBTs. Applications include rectifying, clipping, clamping, switching, small signal amplifiers and followers, and class A, B and D power amplifiers. Focusing on practical aspects of analysis and design, interpretations of device data sheets are integrated throughout the chapters. Computer simulations of circuit responses are included as well. Each chapter features a set of learning objectives, numerous sample problems, and a variety of exercises designed to hone and test circuit design and analysis skills. A companion laboratory manual is available. This is the print version of the on-line OER.
Fundamentals of Semiconductors
Author: Peter YU
Publisher: Springer Science & Business Media
ISBN: 3540264752
Category : Technology & Engineering
Languages : en
Pages : 651
Book Description
Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Publisher: Springer Science & Business Media
ISBN: 3540264752
Category : Technology & Engineering
Languages : en
Pages : 651
Book Description
Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Semiconductor Material and Device Characterization
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Semiconductor Physics
Fundamentals of Power Semiconductor Devices
Author: B. Jayant Baliga
Publisher: Springer
ISBN: 3319939882
Category : Technology & Engineering
Languages : en
Pages : 1114
Book Description
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Publisher: Springer
ISBN: 3319939882
Category : Technology & Engineering
Languages : en
Pages : 1114
Book Description
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Physics of Semiconductor Devices
Author: Simon M. Sze
Publisher: John Wiley & Sons
ISBN: 1119429110
Category : Technology & Engineering
Languages : en
Pages : 944
Book Description
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Publisher: John Wiley & Sons
ISBN: 1119429110
Category : Technology & Engineering
Languages : en
Pages : 944
Book Description
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Theory of Modern Electronic Semiconductor Devices
Author: Kevin F. Brennan
Publisher: Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 472
Book Description
A thorough examination of the present and future of semiconductor device technology Engineers continue to develop new electronic semiconductor devices that are almost exponentially smaller, faster, and more efficient than their immediate predecessors. Theory of Modern Electronic Semiconductor Devices endeavors to provide an up-to-date, extended discussion of the most important emerging devices and trends in semiconductor technology, setting the pace for the next generation of the discipline's literature. Kevin Brennan and April Brown focus on three increasingly important areas: telecommunications, quantum structures, and challenges and alternatives to CMOS technology. Specifically, the text examines the behavior of heterostructure devices for communications systems, quantum phenomena that appear in miniaturized structures and new nanoelectronic device types that exploit these effects, the challenges faced by continued miniaturization of CMOS devices, and futuristic alternatives. Device structures on the commercial and research levels analyzed in detail include: * Heterostructure field effect transistors * Bipolar and CMOS transistors * Resonant tunneling diodes * Real space transfer transistors * Quantum dot cellular automata * Single electron transistors The book contains many homework exercises at the end of each chapter, and a solution manual can be obtained for instructors. Emphasizing the development of new technology, Theory of Modern Electronic Semiconductor Devices is an ideal companion to electrical and computer engineering graduate level courses and an essential reference for semiconductor device engineers.
Publisher: Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 472
Book Description
A thorough examination of the present and future of semiconductor device technology Engineers continue to develop new electronic semiconductor devices that are almost exponentially smaller, faster, and more efficient than their immediate predecessors. Theory of Modern Electronic Semiconductor Devices endeavors to provide an up-to-date, extended discussion of the most important emerging devices and trends in semiconductor technology, setting the pace for the next generation of the discipline's literature. Kevin Brennan and April Brown focus on three increasingly important areas: telecommunications, quantum structures, and challenges and alternatives to CMOS technology. Specifically, the text examines the behavior of heterostructure devices for communications systems, quantum phenomena that appear in miniaturized structures and new nanoelectronic device types that exploit these effects, the challenges faced by continued miniaturization of CMOS devices, and futuristic alternatives. Device structures on the commercial and research levels analyzed in detail include: * Heterostructure field effect transistors * Bipolar and CMOS transistors * Resonant tunneling diodes * Real space transfer transistors * Quantum dot cellular automata * Single electron transistors The book contains many homework exercises at the end of each chapter, and a solution manual can be obtained for instructors. Emphasizing the development of new technology, Theory of Modern Electronic Semiconductor Devices is an ideal companion to electrical and computer engineering graduate level courses and an essential reference for semiconductor device engineers.