Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Solution-Processed High Mobility Top-Gate N-Channel Polymer Field-Effect Transistors *Supported by the National Natural Science Foundation of China Under Grant
Author: Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors*Supported by the National Natural Science Foundation of China Under Grant
Author: Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors
Author: Ting LeiPublisher: Springer
ISBN: 3662456672
Category : Technology & Engineering
Languages : en
Pages : 124
Book Description
The book summarizes Ting Lei’s PhD study on a series of novel conjugated polymers for field-effect transistors (FETs). Studies contain many aspects of polymer FETs, including backbone design, side-chain engineering, property study, conformation effects and device fabrication. The research results have previously scattered in many important journals and conferences worldwide. The book is likely to be of interest to university researchers, engineers and graduate students in materials sciences and chemistry who wish to learn some principles, strategy, and applications of polymer FETs.
AlGaN Channel High Electron Mobility Transistors with an AlxGa1−xN/GaN Composite Buffer Layer*Supported by the National Science and Technology Major Project of China Under Grant No 2013ZX02308-002, and National Natural Science Foundation of China Under Grant Nos 11435010 and 61474086
Author: Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried P-Type Layers*Supported by the National Natural Science Foundation of China Under Grant Nos 61334002, 61106106, and 61204085, and the China Postdoctoral Science Foundation Funded Project Under Grant No 2015M582610
Author: Studies on Field Effect Transistors with Conjugated Polymer and High Permittivity Gate Dielectrics Using Pulsed Plasma Polymerization
Author: Yifan XuPublisher:
ISBN:
Category : Dielectric films
Languages : en
Pages :
Book Description
Abstract: The aim of this Ph. D. project is to explore the operating mechanism of polymer field effect transistors (PFETs) to improve their performance. This dissertation presents thin film insulators as new gate dielectric materials to relax the requirement for driving voltages and illustrates some unique features of field dependent mobility in PFETs. Light responsive PFETs based on new polymer semiconductors are also demonstrated as a potential application of PFETs. Pulsed plasma deposited polymer insulating films were investigated for their potential application as the gate dielectric in PFETs. The work on pulsed plasma polymerized (PPP) thin film insulators put emphasis on improving the dielectric constant of the thin polymer films. Early work on PPP allylamine films indicated that the chamber temperature during pulsed plasma polymerization has an effect on the dielectric constant. The dielectric constant, calculated from the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. Later work on PPP dichlorotetramethyldisiloxane (DCTMDS) films demonstrated very high dielectric constants for an organic-based system, in the range of 7 to 10. Poly(3-hexythiophene) (P3HT) FETs using PPP DCTMDS gate dielectric films were fabricated and tested. The field dependent mobility was demonstrated in polythiophene (PT) FETs by varying the gate length. The field effect mobility in polythiophene FETs increases with reduced channel lengths for high driving forces across the source and drain. The longitudinal electric field (across source and drain) dependence of the field effect mobility is believed to create the rise in mobility once the longitudinal electric field exceeds a critical value of 100 KV/cm. The photoresponse of PFET based on the 2,5-bis(dibutylaminostyryl)-1,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl)benzene terpolymer (BAS-PPE) was also investigated. A sweep of V[subscript DS] shows that BAS-PPE favors hole injection and transport. A sweep of V[subscript GS] shows an increase in I[subscript DS] with different light intensities. Overall, this dissertation studied features of PFETs and suggested techniques to improve their performance, which hopefully will contribute to future progress of polymer electronics.
Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition*Supported by the National Science and Technology Major Project of China Under Grant No 2013ZX02308-002, and the National Natural Sciences Foundation of China Under Grant Nos 61574108, 61334002, 61474086 and 61306017
Author: High Mobility Solution Processed Organic Thin Film Transistors
Author: Sung Kyu ParkNew Platforms for Electronic Devices
Author: Byungwook YooPublisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 270
Book Description
This work focused on the fabrication and electrical characterization of electronic devices and the applications include the n-channel organic field-effect transistors (OFETs), organic complementary circuits, and the germanium nanowire transistors. In organic devices, carbonyl-functionalized [alpha], [omega]-diperfluorohexyl quaterthiophenes (DFHCO-4T) and N, N' --bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2) are used as n-type semiconductors. The effect of dielectric/electrode surface treatment on the response of bottom-contact devices was also examined to maximize the device performance. Some of innovative techniques that employ the conducting polymer, poly(3,4-ethylenedioxythiophene) / poly(styrene sulfonate) (PEDOT/PSS) for the fabrication of OFETs, were compared and investigated. The device performance and the fabrication yield were also considered. Organic complementary ring oscillators and D flip-flops were demonstrated with PDI-8CN2 and pentacene as the n-type and ptype material, respectively. Both circuits recorded the highest speed that any organic transistor-based complementary circuit has achieved to date. The speed of these complementary circuits will be enhanced by increasing the mobility of n-channel further as well as reducing channel lengths and overlap capacitances between the source/drain electrodes and the gate. The semiconductors should be solution processible to be compatible with the inexpensive fabrication techniques envisioned for printed electronic circuits. PDI-8CN2 was used for solution-processed n-channel OFETs and the various parameters are compared for the optimization of devices. Utilizing optimized process parameters and surface treatments for solution-deposited PDI-8CN2 OFETs, we have successfully shown the first fabrication of complementary organic ring oscillators and Dflip flops by the micro-injection of the solution of both p-type and n-type materials in air. One of the potential platforms for low cost fabrication on flexible substrates is the use of inorganic semiconductor nanowires. Accordingly, the germanium nanowire FETs were fabricated and characterized. Conductivity enhanced PEDOT/PSS was employed as the electrode material for nanowire transistors to improve the electrical contacts to the source and drain.
Organic Electronics
Author: Hagen KlaukPublisher: John Wiley & Sons
ISBN: 3527608621
Category : Technology & Engineering
Languages : en
Pages : 446
Book Description
Edited and written by the leading researchers and engineers from such companies as Philips, 3M, Xerox, Infineon, PlasticLogic, Eastman Kodak, Dupont, AIXTRON, and Hueck Folien, this book presents unrivalled and undiluted expertise from those who know best how to assess the risks, opportunities and where this technology is really heading. As such, this practical approach complements the more scientific and fundamentals-oriented literature on the market by providing readers with a first-hand insight into industrial activities to commercialize organic electronics. Following an introduction to the topic, including the history, motivation, benefits and potentials, it reviews recent advances and covers all three important facets of organic electronics: the chemical compounds and materials, manufacturing techniques, and the resulting devices together with their current applications.