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Author: Stephen Ingalls Long Publisher: ISBN: Category : Gallium arsenide Languages : en Pages : 246
Book Description
The theory and experimental procedure for growth of epitaxial layers of GaAs by the solution regrowth method is described. Both GaAs of low carrier concentration with high mobility and intentionally doped GaAs layers, suitable for application to Gunn effect devices, can be grown by this process. Several methods for the evaluation of the thickness, doping profiles and mobility of the GaAs layers are discussed. The limitations of these methods are also presented. Several working Gunn devices were fabricated either with solution grown contacts on commercially made epitaxial active layers or with solution grown active layers. (Author).
Author: Stephen Ingalls Long Publisher: ISBN: Category : Gallium arsenide Languages : en Pages : 246
Book Description
The theory and experimental procedure for growth of epitaxial layers of GaAs by the solution regrowth method is described. Both GaAs of low carrier concentration with high mobility and intentionally doped GaAs layers, suitable for application to Gunn effect devices, can be grown by this process. Several methods for the evaluation of the thickness, doping profiles and mobility of the GaAs layers are discussed. The limitations of these methods are also presented. Several working Gunn devices were fabricated either with solution grown contacts on commercially made epitaxial active layers or with solution grown active layers. (Author).
Author: C. L. Anderson Publisher: ISBN: Category : Languages : en Pages : 148
Book Description
This report describes the progress made during a fifteen-month program to study the feasibility of growth of high-purity epitaxial quality bulk GaAs crystals from solution and annealing of implanted layers and Ohmic contacts for device applications using laser and electron beams. Millimeter-thick crystals have been grown by the low-temperature solution-growth process. Room-temperature n-type carrier concentrations of 2 times 10 to the 15th power/cu.cm. and liquid nitrogen mobilities of 30,000 sq. cm/V/sec have been achieved. Theoretical studies of a variety of potential growth configurations were performed. A detailed study of the laser of annealing implanted layers and Ohmic contacts was performed using several Q-switched and cw lasers. State-of-the-art results were achieved in both the implant-annealing and Ohmic-contact areas. Preliminary investigations of the annealing of implanted layers and Ohmic contacts using pulsed electron beams were also performed. (Author).
Author: Publisher: ISBN: Category : Languages : en Pages : 31
Book Description
Because of its large band gap and high mobility, GaAs is widely used in a range of electronic and electro-optic devices. GaAs bulk crystals are produced primarily from melts using modifications of the Bridgman and Czochralski techniques. In this report, bulk crystal growth from solution is described and its advantages over other growth techniques are pointed out. In the course of the 3-month project reported here, feasibility of bulk crystal growth of GaAs from gallium-rich solution was clearly demonstrated. Four GaAs ingots up to 5 cm in length and 1 cm in diameter were produced, using the traveling heater method(THM). The preferential growth direction of GaAs for this type of growth was also determined. Due to the high cost of single crystal GaAs with suitable dimensions and orientations, seeding from single crystal seeds was not attempted. But in three experiments, growth from multigrain seeds was successfully demonstrated. The GaAs crystals grown by THM exhibited a relatively low concentration of impurities of the type generally detected in the materials prepared by other techniques. Dislocation densities in the order of 1000/sq. cm. were observed in a few of the grains for which the 111 direction coincided with the growth direction. (Author).
Author: M. R. Brozel Publisher: Inst of Engineering & Technology ISBN: 9780852968857 Category : Technology & Engineering Languages : en Pages : 981
Book Description
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Author: Stephen Ingalls Long Publisher: ISBN: Category : Diffusion Languages : en Pages : 506
Book Description
The influence of solute transport mechanisms on growth rates, thickness uniformity, and surface morphology of liquid phase epitaxially grown layers was studied theoretically and experimentally. Steady state diffusion theory was developed to relate temperature gradients, growth temperatures and substrate location to observed growth rates. A vertical steady-state epitaxy system was constructed which uses cylindrical symmetry to achieve good thermal uniformity. A numerical technique was used to calculate temperature distributions in cylindrical graphite boats. The heat conduction equation is solved both with fixed temperature and radiation heat transfer boundary conditions. Good agreement with measured temperature data has been obtained. (Modified author abstract).
Author: Kenneth L. Klohn Publisher: ISBN: Category : Languages : en Pages : 43
Book Description
This report is a review of recent advances in the epitaxial growth of gallium arsenide. The lower temperatures (550-800C) associated with the epitaxial process, as compared to bulk growth (1240C), has aided in the achievement of high purity gallium arsenide layers with low defect density and good homogeneity. A number of systems have been investigated and developed for epitaxial growth of gallium arsenide and each of these is discussed in regard to its associated technology and procedure, chemical reaction, indicated results, advantages and disadvantages. These systems include: (1) vapor growth with the following vapor transport agents: HCl, GaCl3, water vapor, iodine, arsine; (2) liquid phase epitaxy; (3) traveling solvent zone; (4) vapor-liquid-solid; (5) evaporation. All systems require a careful surface preparation of the substrate and the use of high purity starting materials to obtain high purity Gas with good homogeneity and crystal perfection. The highest reported mobility for GaAs was obtained using the liquid phase solution regrowth technique. (Author).
Author: Michael S. Shur Publisher: Springer Science & Business Media ISBN: 1489919899 Category : Technology & Engineering Languages : en Pages : 677
Book Description
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Author: Stephen Ingalls Long
Author: Stephen Ingalls Long
Author: John C. Zolper
Author: C. L. Anderson
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Author: David K. Ferry
Author: M. R. Brozel
Author: Stephen Ingalls Long
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Author: Kenneth L. Klohn
Author: Michael S. Shur