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Author: Min Wu Publisher: ISBN: Category : Languages : en Pages : 57
Book Description
The kinetics and mechanism for solid phase epitaxy (SPE) in has been widely studied due to its critical use in the semiconductor industry. Extensive studies have established the kinetics of this transformation over a wide range of temperatures and time scales; however, careful exploration of the behavior under millisecond thermal annealing is limited. As laser spike annealing is now a widely adopted processing tool for semiconductor manufacturing, comparison and understanding of the kinetics in this time regime is critical. In this work, the lateral-gradient laser spike annealing method was used to investigate the solid phase epitaxy of amorphous silicon over dwell times from 250 ms to 10 ms using CO2 laser irradiation. Silicon samples, amorphized by Si self-implantation, were annealed under varying dwell times and peak temperatures. Transformations from amorphous to crystalline Si, and ultimately melt, were observed using white light and narrow band LED microscope imaging. The width of fully crystallized zone, and the width of the melted area were recorded to determine threshold laser powers for the onset of full crystallization and melting. Partially crystallized areas (partial SPE) was observed at the boundary of the fully crystallized zone; to understand the SPE kinetics in this region, visible light spectroscopy was used to measure the reflectance as a function of wavelength to quantify the degree of SPE growth. These rates are compared with previous estimates using estimated peak temperatures from earlier calibrations of the LSA system. SPE rates are exponentially dependent on temperature and thus also provide a means of calibrating the temperature reached during LSA as a function of the laser power. Based on measured and estimated SPE rates in the LSA timescale, the peak temperature as a function of laser power was estimated for the current LSA configuration. Results of this calibration are compared with earlier temperature calibrations.
Author: Min Wu Publisher: ISBN: Category : Languages : en Pages : 57
Book Description
The kinetics and mechanism for solid phase epitaxy (SPE) in has been widely studied due to its critical use in the semiconductor industry. Extensive studies have established the kinetics of this transformation over a wide range of temperatures and time scales; however, careful exploration of the behavior under millisecond thermal annealing is limited. As laser spike annealing is now a widely adopted processing tool for semiconductor manufacturing, comparison and understanding of the kinetics in this time regime is critical. In this work, the lateral-gradient laser spike annealing method was used to investigate the solid phase epitaxy of amorphous silicon over dwell times from 250 ms to 10 ms using CO2 laser irradiation. Silicon samples, amorphized by Si self-implantation, were annealed under varying dwell times and peak temperatures. Transformations from amorphous to crystalline Si, and ultimately melt, were observed using white light and narrow band LED microscope imaging. The width of fully crystallized zone, and the width of the melted area were recorded to determine threshold laser powers for the onset of full crystallization and melting. Partially crystallized areas (partial SPE) was observed at the boundary of the fully crystallized zone; to understand the SPE kinetics in this region, visible light spectroscopy was used to measure the reflectance as a function of wavelength to quantify the degree of SPE growth. These rates are compared with previous estimates using estimated peak temperatures from earlier calibrations of the LSA system. SPE rates are exponentially dependent on temperature and thus also provide a means of calibrating the temperature reached during LSA as a function of the laser power. Based on measured and estimated SPE rates in the LSA timescale, the peak temperature as a function of laser power was estimated for the current LSA configuration. Results of this calibration are compared with earlier temperature calibrations.
Author: E. Kasper Publisher: CRC Press ISBN: 1351085077 Category : Technology & Engineering Languages : en Pages : 306
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: E. Kasper Publisher: CRC Press ISBN: 1351093517 Category : Technology & Engineering Languages : en Pages : 302
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: E. Kasper Publisher: CRC Press ISBN: 1351085069 Category : Technology & Engineering Languages : en Pages : 260
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: John Roth Publisher: ISBN: Category : Languages : en Pages : 103
Book Description
We report on the growth of Si single-crystal films by solid-phase epitaxy (SPE). Two variants of SPE are discussed: (1) direct SPE, in which an amorphous Si film is deposited onto a clean single-crystal substrate then heated to cause epitaxial crystallization, and (2) silicide-interlayer SPE, in which a thin transition-metal film is deposited onto the substrate and reacted with it prior to the deposition of amorphous Si to scavenge surface contaminants and permit epitaxy. We show that previous work on silicide-interlayer SPE was dominated by contaminant effects and did not represent the intrinsic behavior of the process. Surprisingly, however, conducting interlayer SPE in a noncontaminating, ultrahigh vacuum (UHV) environment did not improve the quality of the films, but instead changed the growth morphology, with the result that even films grown under the most stringent vacuum conditions are unsuitable for most microelectronic applications. It appears that certain foreign contaminants may actually be necessary in silicide-interlayer SPE to hold the silicide together during Si transport.
Author: Peter Rudolph Publisher: Elsevier ISBN: 0444633065 Category : Science Languages : en Pages : 1420
Book Description
Vol 2A: Basic TechnologiesHandbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.Vol 2B: Growth Mechanisms and DynamicsHandbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy. Volume 2A Presents the status and future of Czochralski and float zone growth of dislocation-free silicon Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B Explores capillarity control of the crystal shape at the growth from the melt Highlights modeling of heat and mass transport dynamics Discusses control of convective melt processes by magnetic fields and vibration measures Includes imperative information on the segregation phenomenon and validation of compositional homogeneity Examines crystal defect generation mechanisms and their controllability Illustrates proper automation modes for ensuring constant crystal growth process Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries
Author: Min Wu
Author: Min Wu
Author: E. Kasper
Author: Brian Joseph Greene
Author: Young-Jin Jeon
Author: Jonathan S. Custer
Author: Amelia Chi Ying Liu
Author: E. Kasper
Author: E. Kasper
Author: John Roth
Author: Peter Rudolph