Sol-gel Derived Ferroelectric Lead Zirconate Titanate Thin Films for Non-volatile Random Access Memories PDF Download

Author: Kashyap Ramachandra Bellur
Publisher:
ISBN:
Category :
Languages : en
Pages : 106

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Author: Cheng-Chen Hsueh
Publisher:
ISBN:
Category :
Languages : en
Pages : 296

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Author: Mario Aparicio
Publisher: Springer Science & Business Media
ISBN: 1461419573
Category : Technology & Engineering
Languages : en
Pages : 399

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Sol-Gel Processing for Conventional and Alternative Energy is a comprehensive source of information on the use of sol-gel processing in materials in energy systems, conversion, storage, and generation. The volume editors include numerous applications, primarily in nuclear fuel processing, electrolytes for fuel cells, and dye-sensitized solar cells (DSSC). In addition to examining contemporary processing, properties, and industrial applications, "Sol-Gel Processing for Conventional and Alternative Energy" identifies materials challenges presented by conventional and alternative energy generation that require new materials and innovative processing. Each chapter is written by an internationally respected researcher. The book provides a state-of-the-art treatment of different aspects of materials for energy production, with a focus on processing, and covers related topics such as carbon sequestration, clean energy, and biofuels.

Author: Reza Moazzami
Publisher:
ISBN:
Category :
Languages : en
Pages : 222

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Author: Donglu Shi
Publisher: 清华大学出版社有限公司
ISBN: 9787302059035
Category : Technology & Engineering
Languages : en
Pages : 482

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This book provides an up-to-date introduction to the field of functional thin films and materials, encompassing newly developed technologies and fundamental new concepts. The focus is on the critical areas of novel thin films such as sol gel synthesis of membrane, ferroelectric thin films and devices, functional nanostructured thin films, micromechanical analysis of fiber-reinforced composites, and novel applications. An important aspect of the book lies in its wide coverage of practical applications. It introduces not only the cutting-edge technologies in modern industry, but also unique applications in many rapidly advancing fields. This book is written for a wide readership including university students and researchers from diverse backgrounds such as physics, materials science, engineering and chemistry. Both undergraduate and graduate students will find it a valuable reference book on key topics related to solid state and materials science.

Author: Sridhar Komarneni
Publisher: Wiley-American Ceramic Society
ISBN:
Category : Science
Languages : en
Pages : 288

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"Proceedings of the International Symposium on Sol-Gel Processing, held at the 100th Annual Meeting of the American Ceramic Society in Cincinnati, Ohio, May 3-6, 1998"--verso of T.p.

Author: Yoshio Nishi
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456

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New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Author:
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ISBN:
Category :
Languages : en
Pages : 454

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Author:
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Category :
Languages : en
Pages : 6

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In fabricating lead zirconate titanate (PZT) films for nonvolatile memories and decoupling capacitors, various deposition methods have been investigated. Each can produce films with acceptable dielectric and ferroelectric properties, but sol-gel methods offer excellent control of film stoichiometry and coating uniformity. The sol-gel approaches for PZT film fabrication fall into two categories: processes that use 2-methoxyethanol as a solvent, and processes that use chelating agents, such as acetic acid, for reducing the hydrolysis sensitivity of the alkoxide compounds. Due to concerns about the toxicity of 2-methoxyethanol, we have concentrated on the second category. It was found that, in addition to reducing the hydrolysis sensitivity, the chelating agents serves to define the processing behavior of the films: film consolidation after deposition and densification and crystallization during heat treatment. This paper discusses the relations between precursor structure (reactions between chelating agents and the metal alkoxide starting reagents) and film consolidation, densification, and crystallization.

Author:
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Category :
Languages : en
Pages :

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Ferroelectric perovskite thin films for voltage tunable applications, namely (Ba, Sr)TiO3 (Barium Strontium Titanate or BST) and (Pb, Sr)TiO3 (Lead Strontium Titanate or PST), are synthesized via the so-called sol-gel route. While BST shows the tendency to severe film cracking, PST can be grown crack free onto platinised Si standard substrates and even directly onto SiO2, SiNx or bare Si. The growth kinetics of PST on platinised SiO2/Si and directly on SiO2/Si are studied in detail using X-ray diffractometry (XRD), scanning electron and atomic force microscopy, SEM and AFM respectively. It is shown that PST begins to crystallise at 500°C on Ti/Pt and 550°C directly on SiO2. After a thermal treatment of 650°C for 15 min both films are fully crystallised with random (100) and (110) orientation and a smooth surface. The dielectric properties, e.g. dielectric constant, loss and tunability, of PST 50/50 are measured using a standard Ti/Pt bottom electrode with Cr/Au top electrodes and a TiW/Cu bottom electrode on which the PST thin film was bonded with TiW/Cu top electrodes. The Cu/PST/Cu system shows an enhanced performance in terms of loss resulting in a larger device quality factor and a figure of merit (FOM) of 18.25 compared to 16.6 for the configuration using a Pt bottom electrode. The maximum tunability is 73% with an applied voltage of 35V and the dielectric constant at zero bias is ~ 420 with a loss