Author: International Conference on Shallow Level Centers in Semiconductors (6, 1994, Berkeley, Calif.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Book Description
Sixth International Conference on Shallow Level Centers in Semiconductors, SLCS '94
Author: International Conference on Shallow Level Centers in Semiconductors (6, 1994, Berkeley, Calif.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Book Description
SLCS 94 : sixth International Conference on Shallow Level Centers in Semiconductors ; UC Berkeley, August 10-12, 1994
Author: International Conference on Shallow Level Centers in Semiconductors
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Sixth International Conference on Shallow Level Centers in Semiconductors
Author: International Conference on Shallow Level Centers in Semiconductors (6, 1994, Berkeley, Calif.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 137
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 137
Book Description
6th International Conference on Shallow Level Centers in Semiconductors
Sixth International Conference on Shallow Level Centers in Semiconductors
Papers Presented at the 10th International Conference on Shallow-level Centers in Semiconductors (SLCS-10).
Proceedings of the 10th International Conference on Shallow-Level Centers in Semiconductors
Author: Marek Godlewski
Publisher: Wiley-VCH
ISBN: 9783527404353
Category : Science
Languages : en
Pages : 0
Book Description
The 10th SLCS conference covered a broad range of the topics concerned with the fundamental properties of shallow levels in semiconductors and with impurity related issues of importance to semiconductor technology. such as: - Single and multiple donors and acceptors - Shallow excited states of deep-level impurities - Impurity related properties of mesoscopic and/or low-dimensional systems - Impurity-bound excitions - Defects interaction on the atomic scale - New methods in shallow-level states theory - New experimental techniques - Aspects relevant to applications.
Publisher: Wiley-VCH
ISBN: 9783527404353
Category : Science
Languages : en
Pages : 0
Book Description
The 10th SLCS conference covered a broad range of the topics concerned with the fundamental properties of shallow levels in semiconductors and with impurity related issues of importance to semiconductor technology. such as: - Single and multiple donors and acceptors - Shallow excited states of deep-level impurities - Impurity related properties of mesoscopic and/or low-dimensional systems - Impurity-bound excitions - Defects interaction on the atomic scale - New methods in shallow-level states theory - New experimental techniques - Aspects relevant to applications.
Papers Presented at the 8th International Conference on Shallow-level Centers in Semiconductors (SLCS-98).
International Conference on Shallow-Level Centers in Semiconductors ; 4
Shallow-level Centers In Semiconductors - Proceedings Of The 7th International Conference
Author: C A J Ammerlaan
Publisher: World Scientific
ISBN: 9814546674
Category :
Languages : en
Pages : 554
Book Description
This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.
Publisher: World Scientific
ISBN: 9814546674
Category :
Languages : en
Pages : 554
Book Description
This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.