Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 1
Book Description
Single Ion Displacement Effects in III-V Heterojunction Bipolar Transistors
Author: Single Ion Displacement Effects in Heterojunction Bipolar Transistors
Author: Radiation Effects in III-V Heterojunction Bipolar Transistors
Author: Soujanya VuppalaPublisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 186
Book Description
Electron and neutron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors are investigated in this thesis. Devices with different emitter sizes and grown by two different growth techniques were examined. Based on the physics of heterojunction bipolar transistors and concepts of radiation damage mechanisms, the irradiation effects were analyzed. The devices were subjected to electron and neutron irradiation and were electrically characterized before and after irradiation. Under electron irradiation these devices were quite robust up to a fluence of 6.69x 10^15 e/cm^2. However, a more careful analysis showed a slight gain improvement at a low base current and a small gain degradation at higher base currents. The gain increase at small base currents and low fluence is believed to be caused by the ionization damage in the polyimide passivation layer. The gain degradation at higher fluence and high base currents is due to the displacement damage in the emitter-base junction region. In the case of neutron irradiation the major effects were (1) the decrease of collector current or equivalently the common-emitter DC current gain reduction and (2) the collector-emitter offset voltage shift. At low fluence of neutron irradiation, a small gain increase is observed at low base currents which is caused by the suppression of the base current due to ionization effect. At higher fluence, gain degradation is observed whose magnitude depends upon the nature and fluence of the irradiation particle. This degradation is caused by the displacement damage in the SCR leading to the current gain degradation at all base currents. In addition to the gain degradation, neutron irradiation causes a shift of the collector-emitter offset voltage, which is caused by the displacement damage in the base-collector region.
Radiation Effects in III-V Semiconductors and Heterojunction Bipolar Transistors
Author: Alexei ShatalovPublisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 542
Book Description
The electron, gamma and neutron radiation degradation of III-V semiconductors and heterojunction bipolar transistors (HBTs) is investigated in this thesis. Particular attention is paid to InP and InGaAs materials and InP/InGaAs abrupt single HBTs (SHBTs). Complete process sequences for fabrication of InP/InGaAs HBTs are developed and subsequently employed to produce the devices, which are then electrically characterized and irradiated with the different types of radiation. A comprehensive analytical HBT model is developed and radiation damage calculations are performed to model the observed radiation-induced degradation of SHBTs. The most pronounced radiation effects found in SHBTs include reduction of the common-emitter DC current gain, shift of the collector-emitter (CE) offset voltage and increase of the emitter, base and collector parasitic resistances. Quantitative analysis performed using the developed model demonstrates that increase of the neutral bulk and base-emitter (BE) space charge region (SCR) components of the base current are responsible for the observed current gain degradation. The rise of the neutral bulk recombination is attributed to decrease in a Shockley-Read-Hall (SRH) carrier lifetime, while the SCR current increase is caused by rising SCR SRH recombination and activation of a tunneling-recombination mechanism. On the material level these effects are explained by displacement defects produced in a semiconductor by the incident radiation. The second primary change of the SHBT characteristics, CE offset voltage shift, is induced by degradation of the base-collector (BC) junction. The observed rise of the BC current is brought on by diffusion and recombination currents which increase as more defects are introduced in a semiconductor. Finally, the resistance degradation is attributed to deterioration of low-doped layers of a transistor, and to degradation of the device metal contacts.
Handbook of III-V Heterojunction Bipolar Transistors
Author: William LiuPublisher: Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1312
Book Description
The definitive hands-on guide to heterojunction bipolar transistors In recent years, heterojunction bipolar transistor (HBT) technology has become an intensely researched area in universities and industry worldwide. Boasting superior performance over silicon bipolar transistors with its combined high speed, high linearity, and high power requirements, the III-V HBT is fast becoming a major player in wireless communication, power amplifiers, mixers, and frequency synthesizers. Handbook of III-V Heterojunction Bipolar Transistors presents a comprehensive, systematic reference for this cutting-edge technology. In one self-contained volume, it covers virtually every HBT topic imaginable—introductory and advanced, theoretical and practical—from device physics, to design issues, to HBT performance in digital and analog circuits. It features: A user-friendly, integrated approach to HBTs and circuit design that can be applied in diverse disciplines A discussion of factors determining transistor operation, including thermal properties, failure mechanisms, high-frequency measurements and models, switching characteristics, noise and distortion, and modern device fabrications Over 800 illustrations, showing how to use concepts and equations in the real world An introduction to device physics and semiconductor basics Many worked-out examples and end-of-chapter problem sets Fully developed mathematical derivations Handbook of III-V Heterojunction Bipolar Transistors is an important reference for practicing engineers and researchers in cellular wireless communication and microwave-millimeter electronics as well as for wireless circuit design engineers. It is also extremely useful for advanced undergraduate and graduate students studying advanced semiconductor and microwave circuits.
Effects of Current Injection Annealing on III-V Heterojunction Bipolar Transistors
Author: Topics In Growth And Device Processing Of Iii-v Semiconductors
Author: Cammy R AbernathyPublisher: World Scientific
ISBN: 981450159X
Category : Science
Languages : en
Pages : 565
Book Description
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Displacement Damage and Ionization Effects in Advanced Silicon-germanium Heterojunction Bipolar Transistors
Author: Akil K. SuttonPublisher:
ISBN:
Category : Heterojunctions
Languages : en
Pages :
Book Description
A summary of total dose effects observe in advanced Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) is presented in this work. The principal driving froces behind the increased use of SiGe BiCMOS technology in space based electronics systems are outlined in the motivation Section of Chapter I. This is followed by a discussion of the strained layer Si/SiGe material structure and relevant fabrication techniques used in the development of the first generation of this technology. A comprehensive description of the device performance is presented. Chapter II presents an overview of radiation physics as it applies to microelectronic devices. Several sources of radiation are discussed including the environments encountered by satellites in different orbital paths around the earth. The particle types, interaction mechanisms and damage nomenclature are described. Proton irradiation experiments to analyze worst case displacement and ionization damage are examined in chapter III. A description of the test conditions is first presented, followed by the experimental results on the observed dc and ac transistor performance metrics with incident radiation. The impact of the collector doping level on the degradation is discussed. In a similar fashion, gamma irradiation experiments to focus on ionization only effects are presented in chapter IV. The experimental design and dc results are first presented, followed by a comparison of degradation under proton irradiation. Additional proton dose rate experiments conducted to further investigate observed differences between proton and gamma results are presented.
Research on the Radiation Effects and Compact Model of SiGe HBT
Author: Yabin SunPublisher: Springer
ISBN: 9811046123
Category : Technology & Engineering
Languages : en
Pages : 187
Book Description
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Silicon-germanium Heterojunction Bipolar Transistors
Author: John D. CresslerPublisher: Artech House
ISBN: 1580533612
Category : Science
Languages : en
Pages : 590
Book Description
This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.