Applications of Calorimetry in a Wide Context PDF Download

Author: Klaus-Werner Benz
Publisher: John Wiley & Sons
ISBN: 3527684344
Category : Technology & Engineering
Languages : en
Pages : 559

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Book Description
This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of crystal structures of selected inorganic and molecular crystals is illustrated. The main crystallographic databases as data sources of crystal structures are described. Nucleation processes, their kinetics and main growth mechanism will be introduced in fundamentals of crystal growth. Some phase diagrams in the solid and liquid phases in correlation with the segregation of dopants are treated on a macro- and microscale. Fluid dynamic aspects with different types of convection in melts and solutions are discussed. Various growth techniques for semiconducting materials in connection with the use of external field (magnetic fields and microgravity) are described. Crystal characterization as the overall assessment of the grown crystal is treated in detail with respect to - crystal defects - crystal quality - field of application Introduction to Crystal Growth and Characterization is an ideal textbook written in a form readily accessible to undergraduate and graduate students of crystallography, physics, chemistry, materials science and engineering. It is also a valuable resource for all scientists concerned with crystal growth and materials engineering.

Author: Amal Ali Elkordy
Publisher: BoD – Books on Demand
ISBN: 9535109472
Category : Science
Languages : en
Pages : 488

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Book Description
Calorimetry, as a technique for thermal analysis, has a wide range of applications which are not only limited to studying the thermal characterisation (e.g. melting temperature, denaturation temperature and enthalpy change) of small and large drug molecules, but are also extended to characterisation of fuel, metals and oils. Differential Scanning Calorimetry is used to study the thermal behaviours of drug molecules and excipients by measuring the differential heat flow needed to maintain the temperature difference between the sample and reference cells equal to zero upon heating at a controlled programmed rate. Microcalorimetry is used to study the thermal transition and folding of biological macromolecules in dilute solutions. Microcalorimetry is applied in formulation and stabilisation of therapeutic proteins. This book presents research from all over the world on the applications of calorimetry on both solid and liquid states of materials.

Author: Ching-Hua Su
Publisher: Springer
ISBN: 9783030396541
Category : Technology & Engineering
Languages : en
Pages : 215

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Book Description
The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.

Author: Govindhan Dhanaraj
Publisher: Springer Science & Business Media
ISBN: 3540747613
Category : Science
Languages : en
Pages : 1823

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Book Description
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Author: Hans J. Scheel
Publisher: John Wiley & Sons
ISBN: 0470491108
Category : Science
Languages : en
Pages : 695

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Book Description
This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

Author: B.K. Tanner
Publisher: Springer Science & Business Media
ISBN: 1475711263
Category : Science
Languages : en
Pages : 615

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Book Description
This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.

Author: Jerome V. Moloney
Publisher: Springer Science & Business Media
ISBN: 9780387985817
Category : Business & Economics
Languages : en
Pages : 270

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Book Description
Mathematical methods play a significant role in the rapidly growing field of nonlinear optical materials. This volume discusses a number of successful or promising contributions. The overall theme of this volume is twofold: (1) the challenges faced in computing and optimizing nonlinear optical material properties; and (2) the exploitation of these properties in important areas of application. These include the design of optical amplifiers and lasers, as well as novel optical switches. Research topics in this volume include how to exploit the magnetooptic effect, how to work with the nonlinear optical response of materials, how to predict laser-induced breakdown in efficient optical devices, and how to handle electron cloud distortion in femtosecond processes.

Author: Golla Eranna
Publisher: CRC Press
ISBN: 1482232812
Category : Science
Languages : en
Pages : 432

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Book Description
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.

Author: Ivan V. Markov
Publisher: World Scientific
ISBN: 9812382453
Category : Science
Languages : en
Pages : 566

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Book Description
This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Enrich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science.

Author: Franz E. Rosenberger
Publisher: Springer Science & Business Media
ISBN: 3642812759
Category : Technology & Engineering
Languages : en
Pages : 544

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Book Description
The intrinsic properties of a solid, i. e. , the properties that result from its specific structure, can be largely modified by crystallographic and chem ical defects. The formation of these defects is governed by the heat and mass transfer conditions which prevail on and near a crystal-nutrient in terface during crystallization. Hence, both the growth of highly perfect crystals and the preparation of samples having predetermined defect-induced (extrinsic) properties require a thorough understanding of the reaction and transport mechanisms that govern crystallization from vapors, solutions and melts. Crystal growth, as a science, is therefore mostly concerned with the chemistry and physics of heat and mass transport in these fluid-solid phase transitions. Solid-solid transitions are, at this time, not widely employed for high quality single-crystal production. Transport concepts are largely built upon equilibrium considerations, i. e. , on thermodynamic and phase equilibrium concepts. Hence to supply a "workable" foundation for the succeeding discussions, this text begins in Chapter 2 with a concise treatment of thermodynamics which emphasizes applications to mate rials preparation. After working through this chapter, the reader should feel at ease with often (particularly among physicists) unfamiliar entities such as chemical potentials, fugacities, activities. etc. Special sections on ther mochemical calculations (and their pitfalls) and compilations of thermochemi cal data conclude the second chapter. Crystal growth can be called. in a wide sense, the science and technology of controlling phase transitions that lead to (single crystalline) solids.