Author: Chih Yuan ChengPublisher:
ISBN:
Category :
Languages : en
Pages : 266
Book Description
Simulation of Sic MESFET Using Synopsys Sentaurus TCAD Tools for High Power and High Frequency Analysis
Author: Chih Yuan ChengSimulation of Si CMES Using Synopsys Sentaurus Technology Computer Aided Design Tools
Author: Malav ShahPublisher:
ISBN:
Category : Computer-aided engineering
Languages : en
Pages : 108
Book Description
This paper is concentrated on the development of a complete complementary silicon MESFET technology.
Simulation of Silicon Carbide MESFET Using Analytical Modeling and Synopsis Software for High Power and High Frequency Performance
Author: Puneet PandeyIntroducing Technology Computer-Aided Design (TCAD)
Author: Chinmay K. MaitiPublisher: CRC Press
ISBN: 9814745529
Category : Science
Languages : en
Pages : 438
Book Description
This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.
Simulation of Silicon Carbide Metal Semiconductor Field Effect Transistor Using Analytical Modeling for High Frequency and Time Delay
Author: Dhyaneshwar MurugesanPublisher:
ISBN:
Category :
Languages : en
Pages : 182
Book Description
An Improved Analytical Model of 4H-SiC MESFET for Designing the Device for High Frequency and High-power Applications
Author: Janet ArikianPublisher:
ISBN:
Category :
Languages : en
Pages : 84
Book Description
Silicon Carbide is capable of delivering superior physical characteristics under cavil circumstances because of its inherent broad band gap, high critical breakdown field, high thermal conductivity, and high electron situation drift velocity. Due to its superior quality of high power and low loss, 4H-SiC MESFETs are gradually implemented in designing for High frequency and high power, new energy vehicle and locomotive traction, and so on. In this report, an analytical model is developed to evaluate and analyze many device electrical properties, such as I-V characteristics, transconductance including threshold d voltage, gate-to-source, and gate-to-drain capacitances, and specific-on resistance and cutoff frequency. Meanwhile, it presents more approaches to study how the variation of fabrication parameters such as doping energy level and ion dose density impacts the power and frequency performance for 4H-SiC based MESFETs devices. The model has been analyzed to study I-V characteristics, internal gate capacitances (Gate-to-source and gate-to-drain capacitances), transconductance, specific-on resistance, and cutoff-frequency simulation and analysis. The drain-to-source current reveals its variety along with the change of gate-to-source voltages, which goes up to 70A. Secondly, the ion dose intensity Q significantly affects the internal gate capacitances, which is valuable for evaluating the submicron MESFETS gate model performance under a typical fabrication setup. In addition, transconductance simulation results are obtained by the variation with disparate ion dose densities, which is agreeing well with published theoretical and experimental results. Besides, along with the gradual increase of N-drift layer concentration density, the specific-on resistance has reached to a value of 70ohm. μm2which is very promising property of power device. Lastly, the cutoff and maximum frequencies are 14 GHz and 35 GHz, respectively, with the development of fabrication to implement smaller gate length, if the gate length would be available to narrow down to blow 0.5μm, it has the potential to breakthrough 100 GHz to implement the super high-frequency application, which is also observed from the simulation results.
Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas
Author: Pushpakaran Bejoy NPublisher: World Scientific
ISBN: 9813237848
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.
Silicon Carbide (SiC) Based MESFET Similation for High Power and High Frequency Performance Using MATLAB
Author: Bhavik PatelPublisher:
ISBN:
Category :
Languages : en
Pages : 81
Book Description
In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
4H-SiC Integrated Circuits for High Temperature and Harsh Environment Applications
Author: Mihaela AlexandruPublisher:
ISBN:
Category :
Languages : en
Pages : 186
Book Description
Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300oC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300oC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300oC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.
Technology Computer Aided Design
Author: Chandan Kumar SarkarPublisher: CRC Press
ISBN: 1466512652
Category : Technology & Engineering
Languages : en
Pages : 465
Book Description
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.