Proceedings of 2nd International Conference on Micro-Electronics, Electromagnetics and Telecommunications PDF Download

Author: Suresh Chandra Satapathy
Publisher: Springer
ISBN: 9811042802
Category : Technology & Engineering
Languages : en
Pages : 674

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Book Description
The book is a collection of best papers presented in the Second International Conference on Microelectronics Electromagnetics and Telecommunication (ICMEET 2016), an international colloquium, which aims to bring together academic scientists, researchers and research scholars to discuss the recent developments and future trends in the fields of microelectronics, electromagnetics and telecommunication. Microelectronics research investigates semiconductor materials and device physics for developing electronic devices and integrated circuits with data/energy efficient performance in terms of speed, power consumption, and functionality. The book discusses various topics like analog, digital and mixed signal circuits, bio-medical circuits and systems, RF circuit design, microwave and millimeter wave circuits, green circuits and systems, analog and digital signal processing, nano electronics and giga scale systems, VLSI circuits and systems, SoC and NoC, MEMS and NEMS, VLSI digital signal processing, wireless communications, cognitive radio, and data communication.

Author: Yung-Chun Wu
Publisher: Springer
ISBN: 9811030669
Category : Technology & Engineering
Languages : en
Pages : 337

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Book Description
This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.

Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531

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Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Author: Vassil Palankovski
Publisher: Springer Science & Business Media
ISBN: 3709105609
Category : Technology & Engineering
Languages : en
Pages : 309

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Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Author: Joachim Piprek
Publisher: John Wiley & Sons
ISBN: 3527406670
Category : Technology & Engineering
Languages : en
Pages : 521

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Book Description
This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.

Author: Guilei Wang
Publisher: Springer Nature
ISBN: 9811500460
Category : Technology & Engineering
Languages : en
Pages : 127

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Book Description
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Author: Angèle Reinders
Publisher: John Wiley & Sons
ISBN: 111892746X
Category : Technology & Engineering
Languages : en
Pages : 755

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Book Description
Solar PV is now the third most important renewable energy source, after hydro and wind power, in terms of global installed capacity. Bringing together the expertise of international PV specialists Photovoltaic Solar Energy: From Fundamentals to Applications provides a comprehensive and up-to-date account of existing PV technologies in conjunction with an assessment of technological developments. Key features: Written by leading specialists active in concurrent developments in material sciences, solar cell research and application-driven R&D. Provides a basic knowledge base in light, photons and solar irradiance and basic functional principles of PV. Covers characterization techniques, economics and applications of PV such as silicon, thin-film and hybrid solar cells. Presents a compendium of PV technologies including: crystalline silicon technologies; chalcogenide thin film solar cells; thin-film silicon based PV technologies; organic PV and III-Vs; PV concentrator technologies; space technologies and economics, life-cycle and user aspects of PV technologies. Each chapter presents basic principles and formulas as well as major technological developments in a contemporary context with a look at future developments in this rapidly changing field of science and engineering. Ideal for industrial engineers and scientists beginning careers in PV as well as graduate students undertaking PV research and high-level undergraduate students.

Author: Kevin F. Brennan
Publisher: Cambridge University Press
ISBN: 9780521596626
Category : Science
Languages : en
Pages : 784

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Book Description
Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practising engineers in optoelectronics and related areas.

Author: Manoj Sahni
Publisher: Springer Nature
ISBN: 981159953X
Category : Technology & Engineering
Languages : en
Pages : 544

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Book Description
This book presents new knowledge and recent developments in all aspects of computational techniques, mathematical modeling, energy systems, applications of fuzzy sets and intelligent computing. The book is a collection of best selected research papers presented at the International Conference on “Mathematical Modeling, Computational Intelligence Techniques and Renewable Energy,” organized by the Department of Mathematics, Pandit Deendayal Petroleum University, in association with Forum for Interdisciplinary Mathematics, Institution of Engineers (IEI) – Gujarat and Computer Society of India (CSI) – Ahmedabad. The book provides innovative works of researchers, academicians and students in the area of interdisciplinary mathematics, statistics, computational intelligence and renewable energy.

Author: Riko Radojcic
Publisher: Springer
ISBN: 3319525484
Category : Technology & Engineering
Languages : en
Pages : 192

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Book Description
This book presents a realistic and a holistic review of the microelectronic and semiconductor technology options in the post Moore’s Law regime. Technical tradeoffs, from architecture down to manufacturing processes, associated with the 2.5D and 3D integration technologies, as well as the business and product management considerations encountered when faced by disruptive technology options, are presented. Coverage includes a discussion of Integrated Device Manufacturer (IDM) vs Fabless, vs Foundry, and Outsourced Assembly and Test (OSAT) barriers to implementation of disruptive technology options. This book is a must-read for any IC product team that is considering getting off the Moore’s Law track, and leveraging some of the More-than-Moore technology options for their next microelectronic product.