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Author: D. Young Publisher: ISBN: Category : Languages : en Pages : 5
Book Description
Crystallization of hydrogenated amorphous silicon (a-Si:H) films deposited on low-cost substrates shows potential for solar cell applications. Secondary ion mass spectrometry (SIMS) was used to study impurity incorporation, hydrogen evolution, and dopant diffusion during the crystallization process.
Author: D. Young Publisher: ISBN: Category : Languages : en Pages : 5
Book Description
Crystallization of hydrogenated amorphous silicon (a-Si:H) films deposited on low-cost substrates shows potential for solar cell applications. Secondary ion mass spectrometry (SIMS) was used to study impurity incorporation, hydrogen evolution, and dopant diffusion during the crystallization process.
Author: Taekon Kim Publisher: ISBN: Category : Languages : en Pages :
Book Description
ABSTRACT: Crystallization of amorphous Si (a-Si) thin film has received extensive interest for their attractive applications into Si thin film transistors and Si based solar cells. Among various crystallization techniques, Solid phase crystallization (SPC) and Excimer laser crystallization (ELC) were investigated. Firstly, Solid phase crystallization (SPC) of amorphous silicon thin films deposited by the DC magnetron sputtering system with a modification in nucleation step was investigated at low temperature. The thin film consists of polycrystalline nanoparticles embedded in an amorphous matrix which can act as nuclei during crystallization, resulting in a lower thermal energy for the nucleation. The lowering energy barrier for nucleation would shorten the transition time from amorphous into polycrystalline silicon resulting from the reduction of incubation time and also lower the processing temperature spontaneously. In addition, a comprehensive study of the growth mechanism of the sputtered amorphous silicon thin films is presented during annealing. Samples were prepared with various substrate temperatures and RF power in order to optimize the crystallization of a-Si after the deposition. Also, the effects of annealing condition were examined. Low pressure N2 ambient during SPC promoted crystallization of a-Si thin films and the crystallinity. The low pressure annealing had a large impact on the crystallinity and growth behavior of subsequent films.
Author: E. Kasper Publisher: CRC Press ISBN: 1351085077 Category : Technology & Engineering Languages : en Pages : 306
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: Publisher: ISBN: Category : Power resources Languages : en Pages : 660
Book Description
Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.
Author: Sjoerd Roorda Publisher: ISBN: Category : Silicon Languages : en Pages : 0
Book Description
The history of amorphous silicon (a -Si) dates back to the early days of ion implantation into crystalline silicon (c-Si)1 and to the pioneering experiments on vacuum deposition2, both roughly two decades ago. Studies of its properties and behaviour upon various (heat-) treatments have been carried out ever since, especially in relation to crystallization and solid -phase epitaxy. A boost in research activities occurred around 1975, when it became clear that a -Si in its hydrogenated form (a-Si:H) shows semiconducting properties and can be used as a semiconductor in devices3. a -Sill differs in many respects from its 'clean' counterpart a -Si, but fundamental questions concerning the atomic structure are similar for the two types of material. It was only after the first reports on pulsed -laser annealing in1975, that the possibility of melting (ion implanted) a -Si became an issue4. In the years following this discovery of damage repair by pulsed -laser irradiation, it was suggested that the process does not involve simple thermal melting5 but rather the formation of a high -density electron -hole plasma. In the latter picture, the temperature of the Si lattice does not rise to the melting temperature6. More recently, there is general consensus that indeed a -Si can be melted by pulsed -laser irradiation7.The temperature at which melting occurs, however, still poses major questions. In 1978 Bagley and Chen8a and Spaepen and Turnbull8b predicted that the melting temperature of a -Si should be considerably (> 200 K) lower than that ofc -Si (1685 K). Their prediction was based on calculations of the Gibbs free energy vs. temperature of a -Si and liquid Si (/-Si), in comparison to that of c -Si. Experimental indications for a difference in melting temperature were found in 1980 by Baeri et al.9 who studied pulsed electron beam heating of a -Si. Experiments on continuous wave (cw) laser heating10 and on line -source electron beamheating11, in contrast, did not show any significant difference: solid -phase epitaxial regrowth of a -Si was found to occur even at temperatures relatively close to the melting temperature of c -Si. Subsequently, Thompson et a/.12 performed experiments on nanosecond pulsed -laser induced melting of a -Si and showed convincingly that under those circumstances the material melts at .--200 K below the c -Si melting temperature. Their conclusion is now widely accepted, even though elaborate cw laser heating experiments by Olson et al.13,14 still have not shown any such melting point lowering. In this chapter we will discuss recent measurements of structural changes ina -Si upon laser- and thermal treatments. Some of these will be presented in the remainder of part I of this thesis. The implications of these measurements for the controversy concerning the melting temperature of a -Si will be discussed.
Author: Bernd Schmidt Publisher: Springer Science & Business Media ISBN: 3211993568 Category : Technology & Engineering Languages : en Pages : 425
Book Description
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Author: D. Young
Author: D. Young
Author: G. L. Olson
Author: Taekon Kim
Author: E. Kasper
Author: 
Author: Dong Nyung Lee
Author: G.L. Olson
Author: 
Author: Sjoerd Roorda
Author: Bernd Schmidt