Author: Ram Ekwal Sah
Publisher: The Electrochemical Society
ISBN: 1566775523
Category : Dielectric films
Languages : en
Pages : 863
Book Description
This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9
Author: Ram Ekwal Sah
Publisher: The Electrochemical Society
ISBN: 1566775523
Category : Dielectric films
Languages : en
Pages : 863
Book Description
This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.
Publisher: The Electrochemical Society
ISBN: 1566775523
Category : Dielectric films
Languages : en
Pages : 863
Book Description
This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
Author: R. Ekwal Sah
Publisher: The Electrochemical Society
ISBN: 1566777100
Category : Dielectric films
Languages : en
Pages : 871
Book Description
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Publisher: The Electrochemical Society
ISBN: 1566777100
Category : Dielectric films
Languages : en
Pages : 871
Book Description
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Author: Electrochemical society. Meeting
Publisher: The Electrochemical Society
ISBN: 1566778654
Category : Science
Languages : en
Pages : 950
Book Description
This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Publisher: The Electrochemical Society
ISBN: 1566778654
Category : Science
Languages : en
Pages : 950
Book Description
This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Diele[c]trics VIII
Author: Ram Ekwal Sah
Publisher: The Electrochemical Society
ISBN: 9781566774598
Category : Nature
Languages : en
Pages : 606
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566774598
Category : Nature
Languages : en
Pages : 606
Book Description
Atomic Layer Deposition Applications 3
Author: Ana Londergan
Publisher: The Electrochemical Society
ISBN: 1566775736
Category : Atomic layer deposition
Languages : en
Pages : 300
Book Description
The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the symposium focus. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topography, with controlled composition and properties. Following two successful years, this symposium is well on its way to becoming a forum for the sharing of cutting edge research in the various areas where ALD is used.
Publisher: The Electrochemical Society
ISBN: 1566775736
Category : Atomic layer deposition
Languages : en
Pages : 300
Book Description
The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the symposium focus. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topography, with controlled composition and properties. Following two successful years, this symposium is well on its way to becoming a forum for the sharing of cutting edge research in the various areas where ALD is used.
Nanomaterials-Based Charge Trapping Memory Devices
Author: Ammar Nayfeh
Publisher: Elsevier
ISBN: 012822343X
Category : Technology & Engineering
Languages : en
Pages : 192
Book Description
Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial. Nanomaterials-based Charge Trapping Memory Devices provides a detailed explanation of memory device operation and an in-depth analysis of the requirements of future scalable and low powered memory devices in terms of new materials properties. The book presents techniques to fabricate nanomaterials with the desired properties. Finally, the book highlights the effect of incorporating such nanomaterials in memory devices. This book is an important reference for materials scientists and engineers, who are looking to develop low-powered solutions to meet the growing demand for consumer electronic products and devices. - Explores in depth memory device operation, requirements and challenges - Presents fabrication methods and characterization results of new nanomaterials using techniques, including laser ablation of nanoparticles, ALD growth of nano-islands, and agglomeration-based technique of nanoparticles - Demonstrates how nanomaterials affect the performance of memory devices
Publisher: Elsevier
ISBN: 012822343X
Category : Technology & Engineering
Languages : en
Pages : 192
Book Description
Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial. Nanomaterials-based Charge Trapping Memory Devices provides a detailed explanation of memory device operation and an in-depth analysis of the requirements of future scalable and low powered memory devices in terms of new materials properties. The book presents techniques to fabricate nanomaterials with the desired properties. Finally, the book highlights the effect of incorporating such nanomaterials in memory devices. This book is an important reference for materials scientists and engineers, who are looking to develop low-powered solutions to meet the growing demand for consumer electronic products and devices. - Explores in depth memory device operation, requirements and challenges - Presents fabrication methods and characterization results of new nanomaterials using techniques, including laser ablation of nanoparticles, ALD growth of nano-islands, and agglomeration-based technique of nanoparticles - Demonstrates how nanomaterials affect the performance of memory devices
Charge-Trapping Non-Volatile Memories
Author: Panagiotis Dimitrakis
Publisher: Springer
ISBN: 3319487051
Category : Technology & Engineering
Languages : en
Pages : 215
Book Description
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Publisher: Springer
ISBN: 3319487051
Category : Technology & Engineering
Languages : en
Pages : 215
Book Description
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing
Author: Electrochemical society. Meeting
Publisher: The Electrochemical Society
ISBN: 1566777925
Category : Dielectrics
Languages : en
Pages : 588
Book Description
Publisher: The Electrochemical Society
ISBN: 1566777925
Category : Dielectrics
Languages : en
Pages : 588
Book Description
Microelectronics Technology and Devices, SBMICRO 2004
Author: Edval J. P. Santos
Publisher: The Electrochemical Society
ISBN: 9781566774161
Category : Technology & Engineering
Languages : en
Pages : 418
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566774161
Category : Technology & Engineering
Languages : en
Pages : 418
Book Description
Physics and Technology of High-k Gate Dielectrics 5
Author: Samares Kar
Publisher: The Electrochemical Society
ISBN: 1566775701
Category : Dielectrics
Languages : en
Pages : 676
Book Description
This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Publisher: The Electrochemical Society
ISBN: 1566775701
Category : Dielectrics
Languages : en
Pages : 676
Book Description
This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.