Silicon Carbide (SiC) Based MESFET Similation for High Power and High Frequency Performance Using MATLAB PDF Download
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Author: Bhavik Patel Publisher: ISBN: Category : Languages : en Pages : 81
Book Description
In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
Author: Bhavik Patel Publisher: ISBN: Category : Languages : en Pages : 81
Book Description
In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
Author: Janet Arikian Publisher: ISBN: Category : Languages : en Pages : 84
Book Description
Silicon Carbide is capable of delivering superior physical characteristics under cavil circumstances because of its inherent broad band gap, high critical breakdown field, high thermal conductivity, and high electron situation drift velocity. Due to its superior quality of high power and low loss, 4H-SiC MESFETs are gradually implemented in designing for High frequency and high power, new energy vehicle and locomotive traction, and so on. In this report, an analytical model is developed to evaluate and analyze many device electrical properties, such as I-V characteristics, transconductance including threshold d voltage, gate-to-source, and gate-to-drain capacitances, and specific-on resistance and cutoff frequency. Meanwhile, it presents more approaches to study how the variation of fabrication parameters such as doping energy level and ion dose density impacts the power and frequency performance for 4H-SiC based MESFETs devices. The model has been analyzed to study I-V characteristics, internal gate capacitances (Gate-to-source and gate-to-drain capacitances), transconductance, specific-on resistance, and cutoff-frequency simulation and analysis. The drain-to-source current reveals its variety along with the change of gate-to-source voltages, which goes up to 70A. Secondly, the ion dose intensity Q significantly affects the internal gate capacitances, which is valuable for evaluating the submicron MESFETS gate model performance under a typical fabrication setup. In addition, transconductance simulation results are obtained by the variation with disparate ion dose densities, which is agreeing well with published theoretical and experimental results. Besides, along with the gradual increase of N-drift layer concentration density, the specific-on resistance has reached to a value of 70ohm. μm2which is very promising property of power device. Lastly, the cutoff and maximum frequencies are 14 GHz and 35 GHz, respectively, with the development of fabrication to implement smaller gate length, if the gate length would be available to narrow down to blow 0.5μm, it has the potential to breakthrough 100 GHz to implement the super high-frequency application, which is also observed from the simulation results.
Author: Srikanth Veesam Publisher: ISBN: Category : Languages : en Pages : 69
Book Description
Preceding a couple of years, a lot of work has been done for wide band gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). Silicon Carbide (SiC) as a wide band gap material is used in many applications due to its high temperature, high breakdown field, higher power and high saturation velocity. The main objective of this graduate project is to study the electrical parameters extracted from analytical model. In order to develop an accurate modeling of 4H-SiC MESFET, the drain current has been evaluated for linear and non-linear regimes to obtain the I-V characteristics. The linear and non-linear regimes in the I-V characteristics increase the accuracy of the model for any short channel FET device. The transfer characteristics has been evaluated to determine the threshold voltage confirming the depletion mode. The spectral power density has been evaluated to find the influence of the spectral power density on frequency response of 4H-SiC MESFET, which is a vital study to determine the power aided efficiency (PAE). The characteristics of spectral power density and cut-off frequency determine the device performance for maximum power output and maximum frequency performance are elucidated in the spectral power density plot.
Author: Srikanth Movva Publisher: ISBN: Category : Languages : en Pages : 53
Book Description
This project involves in determining the frequency response considering the effect of transconductance and gate capacitance by developing an analytical model of Silicon Carbide (SiC) MESFETs device. The dispersion characteristics are observed to be dependent on bulk traps effects. I-V characteristics of SiC MESFET have been evaluated to determine the power-aided efficiency and switching performance from the linearity and linearity behaviors of drain current. The significant change of drain current, transconductance and gate-source capacitance have been observed due to the bulk traps effects on charge carrier reflecting GHz frequency performance of SiC MESFET device. The results of device performance simulated by MatLab tool have been described chronologically in the result and discussion chapter.
Author: Konstantinos Zekentes Publisher: Materials Research Forum LLC ISBN: 1945291850 Category : Technology & Engineering Languages : en Pages : 249
Book Description
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Author: Chirayu Shah Publisher: ISBN: Category : Languages : en Pages : 64
Book Description
4H-Silicon Carbide metal semiconductor effect transistor has a massive possible popular high-power device at microwave frequencies because of their extensive band-gap structures of high electrical breakdown field strength, high electron saturation velocity and high operational temperature. A physics-based analytical model of Silicon Carbide based MESFETs has been developed considering high-purity semi-insulating substrates to find the interaction of traps influence between the channel and substrates. I-V characteristics with the influence of traps and without traps, I-V characteristics with field dependent mobility and the transconductance with traps and without traps have been evaluated to understand the power aided efficiency and frequency performance.
Author: Tsunenobu Kimoto Publisher: John Wiley & Sons ISBN: 1118313550 Category : Technology & Engineering Languages : en Pages : 565
Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Bhavik Patel
Author: Bhavik Patel
Author: Puneet Pandey
Author: Dhyaneshwar Murugesan
Author: Janet Arikian
Author: Srikanth Veesam
Author: Srikanth Movva
Author: Konstantinos Zekentes
Author: Chirayu Shah
Author: Chih Yuan Cheng
Author: Tsunenobu Kimoto