Silicon Carbide and Related Materials 2008 PDF Download

Author: Amador Pérez-Tomás
Publisher: Trans Tech Publications Ltd
ISBN: 3038132535
Category : Science
Languages : en
Pages : 1041

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Book Description
ECSCRM 2008 Selected, peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7 – 11, Barcelona, Spain

Author: Peter Friedrichs
Publisher: John Wiley & Sons
ISBN: 9783527629084
Category : Science
Languages : en
Pages : 520

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Book Description
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.

Author: Anton J. Bauer
Publisher: Trans Tech Publications Ltd
ISBN: 3038133353
Category : Technology & Engineering
Languages : en
Pages : 1277

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Book Description
ICSCRM 2009 Selected, peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nürnberg, Germany, October 11 – 16, 2009

Author: Raghu Murali
Publisher: Springer Science & Business Media
ISBN: 1461405483
Category : Technology & Engineering
Languages : en
Pages : 271

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Book Description
Graphene has emerged as a potential candidate to replace traditional CMOS for a number of electronic applications; this book presents the latest advances in graphene nanoelectronics and the potential benefits of using graphene in a wide variety of electronic applications. The book also provides details on various methods to grow graphene, including epitaxial, CVD, and chemical methods. This book serves as a spring-board for anyone trying to start working on graphene. The book is also suitable to experts who wish to update themselves with the latest findings in the field.

Author: Tom Kuech
Publisher: Elsevier
ISBN: 0444633057
Category : Science
Languages : en
Pages : 1384

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Book Description
Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials

Author: Edouard V. Monakhov
Publisher: Trans Tech Publications Ltd
ISBN: 3038134627
Category : Technology & Engineering
Languages : en
Pages : 862

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Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th – September 2nd

Author:
Publisher: Government Printing Office
ISBN: 9781411330153
Category : History
Languages : en
Pages : 1112

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Book Description
Data are provided for more than 80 minerals and materials, along with a presentation of survey methods, summary statistics for domestic nonfuel minerals, and trends in mining and quarrying in the metals and industrial minerals industry in the United States.Virtually all metallic and industrial mineral commodities important to the U.S. economy are discussed. Background information enables analysis of the data, and covers production, consumption, prices, foreign trade, a world review, and an overall outlook.

Author: John D. Cressler
Publisher: CRC Press
ISBN: 1351832808
Category : Technology & Engineering
Languages : en
Pages : 1044

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Book Description
Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

Author: Kazanbas, Mehmet
Publisher: kassel university press GmbH
ISBN: 3862198227
Category :
Languages : en
Pages : 168

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Book Description
With the continual increase in the global energy consumption, grows the demand on the power capacity, efficient production, distribution and utilization of the electrical energy generated. The role of power electronics in such contexts has been of great importance not only for the traditional power generator systems but also for the decentralized renewable energy generation, like solar and wind power. Several innovations can be observed in the field of power systems for renewable energy sources based on power electronics. Improvements can be identified regarding for example control techniques, semiconductor devices, electromagnetic components and also topologies. Such developments allow specific application requirements to be fulfilled with lower levels of losses and less material expenditure. In this thesis, power electronic topologies are analyzed with respect to the type of electrical isolation between the input and output, which may differ in three ways: galvanic, capacitive and electronic. Among the above requirements, “galvanic isolation” is a major issue in photovoltaic applications, not only due to regulations concerning the grounding of PV modules but also because of compatibility requirements of new cell technologies. Within this framework, a theoretical and practical examination on new inverter topologies is investigated with electronic isolation method in order to meet the targeted future challenge aspects.

Author: Zhe Chuan Feng
Publisher: CRC Press
ISBN: 0429583958
Category : Science
Languages : en
Pages : 465

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Book Description
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.