Author: Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 908
Book Description
Silicon Carbide and Related Materials--1999
Author: Silicon Carbide and Related Materials--1999
Author: Calvin H. CarterPublisher:
ISBN:
Category : Science
Languages : en
Pages : 908
Book Description
This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) held October 10-15, 1999, at Research Triangle Park, North Carolina. They contain 401 papers, 19 of which were invited.
Sic Materials And Devices - Volume 1
Author: Sergey RumyantsevPublisher: World Scientific
ISBN: 981447777X
Category : Technology & Engineering
Languages : en
Pages : 342
Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
SiC Power Materials
Author: Zhe Chuan FengPublisher: Springer Science & Business Media
ISBN: 9783540206668
Category : Science
Languages : en
Pages : 480
Book Description
In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.
SiC Materials and Devices
Author: Michael ShurPublisher: World Scientific
ISBN: 9812568352
Category : Technology & Engineering
Languages : en
Pages : 342
Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Silicon Carbide and Related Materials - 1999
Author: Calvin H. Carter Jr.Publisher: Trans Tech Publications Ltd
ISBN: 3035705518
Category : Technology & Engineering
Languages : en
Pages : 1696
Book Description
Proceedings of the International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, Oct. 10-15, 1999
Silicon Carbide
Author: Wolfgang J. ChoykePublisher: Springer Science & Business Media
ISBN: 3642188702
Category : Technology & Engineering
Languages : en
Pages : 911
Book Description
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
The MEMS Handbook
Author: Mohamed Gad-el-HakPublisher: CRC Press
ISBN: 9781420050905
Category : Technology & Engineering
Languages : en
Pages : 1386
Book Description
The revolution is well underway. Our understanding and utilization of microelectromechanical systems (MEMS) are growing at an explosive rate with a worldwide market approaching billions of dollars. In time, microdevices will fill the niches of our lives as pervasively as electronics do right now. But if these miniature devices are to fulfill their mammoth potential, today's engineers need a thorough grounding in the underlying physics, modeling techniques, fabrication methods, and materials of MEMS. The MEMS Handbook delivers all of this and more. Its team of authors-unsurpassed in their experience and standing in the scientific community- explore various aspects of MEMS: their design, fabrication, and applications as well as the physical modeling of their operations. Designed for maximum readability without compromising rigor, it provides a current and essential overview of this fledgling discipline.
RF and Microwave Semiconductor Device Handbook
Author: Mike GolioPublisher: CRC Press
ISBN: 1420039970
Category : Technology & Engineering
Languages : en
Pages : 336
Book Description
Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.
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