Si/SiO2 Interfere Studies by Immersion Ellipsometry PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages : 8
Book Description
The mechanisms associated with Si/SiO2 interface annealing and Thermal oxidation conditions were studied by spectroscopic immersion ellipsometry. Essentially, this surface sensitive ellipsometry technique uses liquids that refractive index match with the films, thereby optically removing the films. With the use of an optical model, it is shown that at annealing temperatures viscous relaxation dominates, while at low annealing temperatures the suboxide reduction is apparent. It is also shown that with the thickening SiO2 Overlayer, the thickness of the suboxide layer at the interface increases and the average radius of the crystalline silicon protrusions decreases for the three different orientation studied. These results are consistent with the commonly accepted Si oxidation model ... Spectroscopic immersion ellipsometry.
Author: Publisher: ISBN: Category : Languages : en Pages : 8
Book Description
The mechanisms associated with Si/SiO2 interface annealing and Thermal oxidation conditions were studied by spectroscopic immersion ellipsometry. Essentially, this surface sensitive ellipsometry technique uses liquids that refractive index match with the films, thereby optically removing the films. With the use of an optical model, it is shown that at annealing temperatures viscous relaxation dominates, while at low annealing temperatures the suboxide reduction is apparent. It is also shown that with the thickening SiO2 Overlayer, the thickness of the suboxide layer at the interface increases and the average radius of the crystalline silicon protrusions decreases for the three different orientation studied. These results are consistent with the commonly accepted Si oxidation model ... Spectroscopic immersion ellipsometry.
Author: Publisher: ISBN: Category : Languages : en Pages : 23
Book Description
The dependence of the Si/Sio2 interface characteristics on the thickness and oxidation temperature for Sio2 films grown on different Si orientations was studied by spectroscopic immersion ellipsometry (SIE) and atomic force microscopy (AFM). Essentially, SIE uses liquids that-match to the refractive index of the films, thereby optically removing the films and consequently increasing the sensitivity to the interface. We show that as the thickness of the thermally grown SiO2 overlayer increases, the thickness of the suboxide layer at the interface also increases, and the average radius of the crystalline silicon protrusions (roughness) at the interface decreases for the three different Si orientations (100), (110) and (111), and two different oxidation temperatures (800 deg C and 1000 deg C) studied. The dependence of the interface roughness on the thickness of the SiO2 overlayer was confirmed by AFM. The results include unintentionally and intentionally roughened Si samples and are shown to be consistent with the commonly accepted Si oxidation model. Thickness, Oxidation, Atomic, Immersion.
Author: Electrochemical Society. Meeting Publisher: ISBN: Category : Science Languages : en Pages : 584
Book Description
Proceedings of the symposium on [title], May 1988, at the 173rd meeting of the Electromechanical Society in Atlanta, Ga. Sixty articles cover: growth mechanisms of films; thermal and structural properties; atomic and electronic structure; defects, impurities, and damage mechanisms in systems; effects of preoxidation substrate quality, surface treatments, and oxidation induced point defect generation; and electron and hole transport and tunneling. Annotation copyrighted by Book News, Inc., Portland, OR
Author: Publisher: ISBN: Category : Research Languages : en Pages : 1794
Book Description
Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.
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Author: Wing Ling Liliean Lai
Author: S. T. Pantelides
Author: Electrochemical Society. Meeting
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