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Author: Taylor R. Ochs Publisher: ISBN: Category : Languages : en Pages :
Book Description
Dual-Sided Microstructured Semiconductor Neutron Detectors (DS-MSNDs) have been developed as a viable alternative to expensive 3He for thermal-neutron detection. DS-MSNDs were designed as an advancement on single-sided MSNDs which comprise high-aspect ratio trenches backfilled with 6LiF neutron conversion material etched deep into silicon pvn-junction diodes. Neutrons react in the conversion material, which produces energetic charged-particle reaction products that are measured in the adjacent silicon microfeatures. Single-sided MSNDs have been produced with an intrinsic thermal-neutron detection efficiency of 30-35% for normally incident neutrons, and the key limiting factor in detection efficiency is neutron free streaming paths through the neutron insensitive silicon fins. The DS-MSND incorporates a second set of 6LiF-backfilled trenches etched on the back-side of a thicker silicon diode that are offset from the front-side trenches to eliminate the neutron free streaming paths. Monte Carlo simulations show DS-MSNDs only 1.5-mm thick are theoretically capable of 80% intrinsic thermal-neutron detection efficiency, which could directly match commonly available 3He detectors. This work describes the design of DS-MSNDs including electric field modeling and microfeature geometry optimization with MCNP simulations, and fabrication process improvements implemented that elevate the state-of-the-art. The previous world record for intrinsic thermal-neutron detection efficiency for semiconductor neutron detectors was 53.5 ± 0.6%. Advancements in deep-trench etching and 6LiF backfilling methods presented herein have increased the current record intrinsic-thermal neutron detection efficiency to 69.3 ± 1.5%. Several prototype detector systems were fabricated implementing DS-MSND and MSND technology to aid in search and localization of special nuclear material. Drop-in replacements for small-diameter, high-pressure 3He detectors, and the DS-MSND-based HeRep Mk IV measured 80% to 115% of the count rate of a similarly sized 10-atm 3He detector based on the detector and source moderation configuration. Additionally, modular neutron detectors were developed for use in a high-sensitivity, low profile, wearable neutron detector for covert or overt source detection missions by warfighters, first responders, or law enforcement personnel. Additionally, MCNP simulations show the wearable detectors have potential to as operate as high-accuracy, real-time, neutron dose meters. The DS-MSND-based detector systems with on-board electronics offer a low-cost, low-power, compact, high sensitivity, alternative to 3He neutron detection.
Author: Taylor R. Ochs Publisher: ISBN: Category : Languages : en Pages :
Book Description
Dual-Sided Microstructured Semiconductor Neutron Detectors (DS-MSNDs) have been developed as a viable alternative to expensive 3He for thermal-neutron detection. DS-MSNDs were designed as an advancement on single-sided MSNDs which comprise high-aspect ratio trenches backfilled with 6LiF neutron conversion material etched deep into silicon pvn-junction diodes. Neutrons react in the conversion material, which produces energetic charged-particle reaction products that are measured in the adjacent silicon microfeatures. Single-sided MSNDs have been produced with an intrinsic thermal-neutron detection efficiency of 30-35% for normally incident neutrons, and the key limiting factor in detection efficiency is neutron free streaming paths through the neutron insensitive silicon fins. The DS-MSND incorporates a second set of 6LiF-backfilled trenches etched on the back-side of a thicker silicon diode that are offset from the front-side trenches to eliminate the neutron free streaming paths. Monte Carlo simulations show DS-MSNDs only 1.5-mm thick are theoretically capable of 80% intrinsic thermal-neutron detection efficiency, which could directly match commonly available 3He detectors. This work describes the design of DS-MSNDs including electric field modeling and microfeature geometry optimization with MCNP simulations, and fabrication process improvements implemented that elevate the state-of-the-art. The previous world record for intrinsic thermal-neutron detection efficiency for semiconductor neutron detectors was 53.5 ± 0.6%. Advancements in deep-trench etching and 6LiF backfilling methods presented herein have increased the current record intrinsic-thermal neutron detection efficiency to 69.3 ± 1.5%. Several prototype detector systems were fabricated implementing DS-MSND and MSND technology to aid in search and localization of special nuclear material. Drop-in replacements for small-diameter, high-pressure 3He detectors, and the DS-MSND-based HeRep Mk IV measured 80% to 115% of the count rate of a similarly sized 10-atm 3He detector based on the detector and source moderation configuration. Additionally, modular neutron detectors were developed for use in a high-sensitivity, low profile, wearable neutron detector for covert or overt source detection missions by warfighters, first responders, or law enforcement personnel. Additionally, MCNP simulations show the wearable detectors have potential to as operate as high-accuracy, real-time, neutron dose meters. The DS-MSND-based detector systems with on-board electronics offer a low-cost, low-power, compact, high sensitivity, alternative to 3He neutron detection.
Author: Steven Lawrence Bellinger Publisher: ISBN: Category : Languages : en Pages :
Book Description
The microstructured semiconductor neutron detector (MSND) was investigated and previous designs were improved and optimized. In the present work, fabrication techniques have been refined and improved to produce three-dimensional microstructured semiconductor neutron detectors with reduced leakage current, reduced capacitance, highly anisotropic deep etched trenches, and increased signal-to-noise ratios. As a result of these improvements, new MSND detection systems function with better gamma-ray discrimination and are easier to fabricate than previous designs. In addition to the microstructured diode fabrication improvement, a superior batch processing backfill-method for 6LiF neutron reactive material, resulting in a nearly-solid backfill, was developed. This method incorporates a LiF nano-sizing process and a centrifugal batch process for backfilling the nanoparticle LiF material. To better transition the MSND detector to commercialization, the fabrication process was studied and enhanced to better facilitate low cost and batch process MSND production. The research and development of the MSND technology described in this work includes fabrication of variant microstructured diode designs, which have been simulated through MSND physics models to predict performance and neutron detection efficiency, and testing the operational performance of these designs in regards to neutron detection efficiency, gamma-ray rejection, and silicon fabrication methodology. The highest thermal-neutron detection efficiency reported to date for a solid-state semiconductor detector is presented in this work. MSNDs show excellent neutron to gamma-ray (n/[gamma]) rejection ratios, which are on the order of 106, without significant loss in thermal-neutron detection efficiency. Individually, the MSND is intrinsically highly sensitive to thermal neutrons, but not extrinsically sensitive because of their small size. To improve upon this, individual MSNDs were tiled together into a 6x6-element array on a single silicon chip. Individual elements of the array were tested for thermal-neutron detection efficiency and for the n/[gamma] reject ratio. Overall, because of the inadequacies and costs of other neutron detection systems, the MSND is the premier technology for many neutron detection applications.
Author: Ryan G. Fronk Publisher: ISBN: Category : Languages : en Pages :
Book Description
Interest in high-efficiency replacements for thin-film-coated thermal neutron detectors led to the development of single-sided microstructured semiconductor neutron detectors (MSNDs). MSNDs are designed with micro-sized trench structures that are etched into a vertically-oriented pvn-junction diode, and backfilled with a neutron converting material, such as 6LiF. Neutrons absorbed by the converting material produce a pair of charged-particle reaction products that can be measured by the diode substrate. MSNDs have higher neutron-absorption and reaction-product counting efficiencies than their thin-film-coated counterparts, resulting in up to a 10x increase in intrinsic thermal neutron detection efficiency. The detection efficiency for a single-sided MSND is reduced by neutron streaming paths between the conversion-material filled regions that consequently allow neutrons to pass undetected through the detector. Previously, the highest reported intrinsic thermal neutron detection efficiency for a single MSND was approximately 30%. Methods for double-stacking and aligning MSNDs to reduce neutron streaming produced devices with an intrinsic thermal neutron detection efficiency of 42%. Presented here is a new type of MSND that features a complementary second set of trenches that are etched into the back-side of the detector substrate. These dual-sided microstructured semiconductor neutron detectors (DS-MSNDs) have the ability to absorb and detect neutrons that stream through the front-side, effectively doubling the detection efficiency of a single-sided device. DS-MSND sensors are theoretically capable of achieving greater than 80% intrinsic thermal neutron detection efficiency for a 1-mm thick device. Prototype DS-MSNDs with diffused pvp-junction operated at 0-V applied bias have achieved 53.54±0.61%, exceeding that of the single-sided MSNDs and double-stacked MSNDs to represent a new record for detection efficiency for such solid-state devices.
Author: Yacouba Diawara Publisher: Springer Nature ISBN: 3031365461 Category : Science Languages : en Pages : 257
Book Description
This book covers the most common neutron detectors used in neutron scattering facilities and all of those in use at Oak Ridge National Lab. It starts describing the facilities, instruments and the critical detector parameters needed by various instruments. Then the key components of the 3He-based linear position-sensitive detectors as well as on their electronics, which require particular attention to signal processing and noise reduction, are introduced. One chapter is dedicated to the 3He alternatives where scintillators play a critical role. It also covers emerging neutron detection technologies including semiconductors, vacuum-based devices and their associated readouts, which will be required in the future for high rate and high-resolution neutron detectors. The authors explain the logic behind the choice of materials as well as the various constraints that neutron detectors must respect to be useful. Some of these constraints, such as efficiency and gamma-ray sensitivity are common to all neutron counters while others, like timing resolution, dynamic range, and peak counting rate, depend on the applications. The book guides experts, the nuclear science community, and young scholars through the physical processes and the required electronics in a way that is accessible for those not professionally involved in designing detector’s components and electronic circuits.
Author: Gerhard Lutz Publisher: Springer ISBN: 3540716793 Category : Technology & Engineering Languages : en Pages : 351
Book Description
Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.
Author: F. Wald Publisher: ISBN: Category : Languages : en Pages : 36
Book Description
The goal of this program was the crystal growth of red alpha-rhombohedral boron for use as a semiconductor neutron detector. Red boron was prepared as microscopic crystals by a variety of techniques. Crystals of red boron 0.1 mm long were prepared by the chemical vapor deposition (CVD) of BBr3 at 1170C. Microscopic crystals of red boron could also be prepared by the vapor-liquid-solid and traveling solvent method variations of CVD as well as by precipitation from copper-gold solutions. Solid solutions of copper and gold in beta-rhombohedral boron have been grown by the traveling heater method from a copper-gold alloy at temperatures of 1000 to 1200C. The electrical and optical properties of this material appear to be dominated by the same kind of trapping mechanism that controls the properties of high purity beta-boron. The only distinguishing feature of this material seems to be that both the trap concentration and the free carrier concentration are quite high. The free carrier mobilities of this material are low, which precludes its use for semiconductor radiation detection. (Author).
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.
Author: Alan Owens Publisher: CRC Press ISBN: 1351629174 Category : Science Languages : en Pages : 494
Book Description
Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material
Author: Taylor R. Ochs
Author: Taylor R. Ochs
Author: Steven Lawrence Bellinger
Author: Ryan G. Fronk
Author: Yacouba Diawara
Author: Gerhard Lutz
Author: F. Wald
Author: 
Author: Ian Suttie
Author: Alan Owens
Author: