Author: Ramón Compañó MontePublisher:
ISBN:
Category :
Languages : de
Pages :
Book Description
Semiconductor - metal interfaces studied by high resolution electron energy loss spectroscopy
Author: Ramón Compañó MonteSemiconductor Metal Interfaces Studied by High Resolution Electron Energy Loss Spectroscopy
Author: Ramón Compañó MonteSemiconductior metal interfaces studied by high resolution electron energy loss spectroscopy
Author: Ramón Compañó MonteSemiconductor-metal Interfaces Studied by High Resolution Electron Enery Loss Spectroscopy
Author: Ramón Compañó MonteTransmission Electron Energy Loss Spectrometry in Materials Science and the EELS Atlas
Author: Channing C. AhnPublisher: John Wiley & Sons
ISBN: 3527604774
Category : Science
Languages : en
Pages : 472
Book Description
This book/CD package provides a reference on electron energy loss spectrometry (EELS) with the transmission electron microscope, an established technique for chemical and structural analysis of thin specimens in a transmission electron microscope. Describing the issues of instrumentation, data acquisition, and data analysis, the authors apply this technique to several classes of materials, namely ceramics, metals, polymers, minerals, semiconductors, and magnetic materials. The accompanying CD-ROM consists of a compendium of experimental spectra.
Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference
Author: J PollmanPublisher: World Scientific
ISBN: 9814552399
Category :
Languages : en
Pages : 818
Book Description
Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.
HREELS Studies of Al Adsorption on Si(111).
Author: G. S. GlanderPublisher:
ISBN:
Category :
Languages : en
Pages : 16
Book Description
The search for a better understanding of the metal- semiconductor interface is an on going theme in surface research. Many different techniques have been applied to study a variety of metal-semiconductor systems to further this understanding. It is significant when many techniques have been applied to the same interface, building up a complete picture of its physical properties, and providing a case study for theorists to test their models and calculation methods against. We report here the results of a high-resolution electron energy loss spectroscopy (HREELS) study at zero momentum transfer. This is the first part of a study that will map out the full phonon dispersion.
Scientific and Technical Aerospace Reports
Author: Atomic Scale Structure and Chemistry of Interfaces by Z-contrast Imaging and Electron Energy Loss Spectroscopy in the STEM.
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 13
Book Description
The macroscopic properties of many materials are controlled by the structure and chemistry at the grain boundaries. A basic understanding of the structure-property relationship requires a technique which probes both composition and chemical bonding on an atomic scale. The high-resolution Z-contrast imaging technique in the scanning transmission electron microscope (STEM) forms an incoherent image in which changes in atomic structure and composition can be interpreted intuitively. This direct image allows the electron probe to be positioned over individual atomic columns for parallel detection electron energy loss spectroscopy (PEELS) at a spatial resolution approaching 0.22nm. The bonding information which can be obtained from the fine structure within the PEELS edges can then be used in conjunction with the Z-contrast images to determine the structure at the grain boundary. In this paper we present 3 examples of correlations between the structural, chemical and electronic properties at materials interfaces in metal-semiconductor systems, superconducting and ferroelectric materials.
Photoemission, Vibrational and Stimulated Desorption Studies of Metal-Semiconductor Interfaces and of Chemisorbed Atoms and Molecules
Author: G. MargaritondoPublisher:
ISBN:
Category :
Languages : en
Pages : 18
Book Description
This program has produced in recent years a number of fundamental results on the microscopic properties of metal-semiconductor interfaces and on the mechanism of photon stimulated desorption. Both areas of research are of fundamental interest in condensed matter physics. Furthermore they have important applications in technology. The microscopic metal-semiconductor interface properties are directly related to the behavior and performance of the Schottky barrier, one of the building blocks of modern solid-state devices. This program investigates the formation of metal-semiconductor interfaces with some of the most powerful surface-science experimental probes: photoemission spectroscopy with synchrotron radiation, Auger spectroscopy, low-energy electron defraction in high-resolution electron energy loss surface vibrational spectroscopy. The stimulated desorption process is potentially a good probe of the chemical properties of absorbed species, e.g. in catalytic systems.