Semiconductor Interfaces, Microstructures and Devices PDF Download

Author: Zhe Chuan Feng
Publisher: CRC Press
ISBN: 9780750301800
Category : Science
Languages : en
Pages : 318

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Book Description
A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.

Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 981450582X
Category : Technology & Engineering
Languages : en
Pages : 327

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Book Description
Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various experimental technologies and theoretical methods. This book provides an up-to-date review on these advances and includes the following major subjects: IV-IV, III-V and II-VI semiconductors and metal/semiconductor structures; new developments in growth methods; electric, optical, magnetic and structural characterization and properties; relative theories — electronic transport, phonos and interface modes; devices and applications. These materials are organized into four sections: General, III-V, II-VI and IV-IV, which offer comprehensive information and help readers in following the new developments in the research frontiers of the above fields.

Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 9789810209889
Category : Science
Languages : en
Pages : 336

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Book Description
1. Carrier transport in artificially structured two-dimensional semiconductor systems / W. Walukiewicz -- 2. Miniband conduction in semiconductor superlattices / A. Sibille, J.F. Palmier, C. Minot -- 3. Barrier width dependence of optical properties in semiconductor superlattices / J.J. Song, J.F. Zhou and J.M. Jacob -- 4. Radiative processes in GaAs/AlGaAs heterostructures / P.O. Holtz, B. Monemar and J. Merz -- 5. Type-I-type-II transition in GaAs/AlAs superlattices / G.H. Li -- 6. Photoluminescence studies of interface roughness in GaAs/AlAs quantum well structures / D. Gammon, B.V. Shanabrook and D.S. Katzer -- 7. Optical and magneto-optical properties of narrow In[symbol]Ga[symbol]As-GaAs quantum wells / D.C. Reynolds and K.R. Evans -- 8. Growth and studies of antimony based III-V compounds by magnetron sputter epitaxy using metalorganic and solid elemental sources / J.B. Webb and R. Rousina -- 9. Properties of Cd[symbol]Mn[symbol]Te films and Cd[symbol]Mn[symbol]Te-CdTe superlattices grown by pulsed laser evaporation and epitaxy / J.M. Wrobel and J.J. Dubowski -- 10. Zn[symbol]Cd[symbol]Se[symbol]Te[symbol] quatenary II-VI wide bandgap alloys and heterostructures / R.E. Nahory, M.J.S.P. Brasil and M.C. Tamargo -- 11. Intersubband transitions in SiGe/Si quantum structures/ R.P.G. Karunasiri, K.L. Wang and J.S. Park -- 12. High-temperature discrete devices in 6H-SiC: sublimation epitaxial growth, device technology and electrical performance / M.M. Anikin [und weitere]

Author: Jarek Dabrowski
Publisher: World Scientific
ISBN: 9814496820
Category : Science
Languages : en
Pages : 576

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Book Description
Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references are numerous and organized in tables, allowing a search without the need to browse through the text.Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.

Author: Wai-Kai Chen
Publisher: CRC Press
ISBN: 1420005960
Category : Technology & Engineering
Languages : en
Pages : 2320

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Book Description
For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.

Author: Dragica Vasileska
Publisher: CRC Press
ISBN: 1420064843
Category : Technology & Engineering
Languages : en
Pages : 782

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Book Description
Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.

Author: John E. Ayers
Publisher: CRC Press
ISBN: 1482254360
Category : Technology & Engineering
Languages : en
Pages : 660

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Book Description
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Author: John D. Cressler
Publisher: CRC Press
ISBN: 143987431X
Category : Technology & Engineering
Languages : en
Pages : 1041

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Book Description
Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

Author: E. F. Schubert
Publisher: Cambridge University Press
ISBN: 9780521482882
Category : Science
Languages : en
Pages : 628

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Book Description
This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.

Author: Vladimir V. Mitin
Publisher: Cambridge University Press
ISBN: 1108556752
Category : Technology & Engineering
Languages : en
Pages : 417

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Book Description
Get to grips with the fundamental optical and optoelectronic properties of nanostructures. This comprehensive guide makes a wide variety of modern topics accessible, and includes up-to-date material on the optical properties of monolayer crystals, plasmonics, nanophotonics, UV quantum well lasers, and wide bandgap materials and heterostructures. The unified, multidisciplinary approach makes it ideal for those in disciplines spanning nanoscience, physics, materials science, and optical, electrical and mechanical engineering. Building on work first presented in Quantum Heterostructures (Cambridge, 1999), this volume draws on years of research and teaching experience. Rigorous coverage of basic principles makes it an excellent resource for senior undergraduates, and detailed mathematical derivations illuminate concepts for graduate students, researchers and professional engineers. The examples with solutions included in the text and end-of-chapter problems allows the students to use this text to enhance their understanding.