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Author: Vassil Palankovski Publisher: Springer Science & Business Media ISBN: 3709105609 Category : Technology & Engineering Languages : en Pages : 309
Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Author: Vassil Palankovski Publisher: Springer Science & Business Media ISBN: 3709105609 Category : Technology & Engineering Languages : en Pages : 309
Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Author: Giovanni Agostini Publisher: Elsevier ISBN: 0080558151 Category : Science Languages : en Pages : 501
Book Description
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Author: Fedor T. Vasko Publisher: Springer Science & Business Media ISBN: 1461205352 Category : Technology & Engineering Languages : en Pages : 402
Book Description
The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures. Although such structures have been known since the 1940s, it was only in the 1980s that they moved to the forefront of research. The resulting structures have remarkable properties not shared by bulk materials. The text begins with a description of the electronic properties of various types of heterostructures, including discussions of complex band-structure effects, localised states, tunnelling phenomena, and excitonic states. The focus of the remainder of the book is on optical properties, including intraband absorption, luminescence and recombination, Raman scattering, subband optical transitions, nonlinear effects, and ultrafast optical phenomena. The concluding chapter presents an overview of some of the applications that make use of the physics discussed. Appendices provide background information on band structure theory, kinetic theory, electromagnetic modes, and Coulomb effects.
Author: Keh Yung Cheng Publisher: Springer Nature ISBN: 3030519031 Category : Technology & Engineering Languages : en Pages : 537
Book Description
This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Author: Umesh Mishra Publisher: Springer Science & Business Media ISBN: 1402064802 Category : Technology & Engineering Languages : en Pages : 583
Book Description
Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges. It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.
Author: Kevin F. Brennan Publisher: Wiley-Interscience ISBN: Category : Technology & Engineering Languages : en Pages : 472
Book Description
A thorough examination of the present and future of semiconductor device technology Engineers continue to develop new electronic semiconductor devices that are almost exponentially smaller, faster, and more efficient than their immediate predecessors. Theory of Modern Electronic Semiconductor Devices endeavors to provide an up-to-date, extended discussion of the most important emerging devices and trends in semiconductor technology, setting the pace for the next generation of the discipline's literature. Kevin Brennan and April Brown focus on three increasingly important areas: telecommunications, quantum structures, and challenges and alternatives to CMOS technology. Specifically, the text examines the behavior of heterostructure devices for communications systems, quantum phenomena that appear in miniaturized structures and new nanoelectronic device types that exploit these effects, the challenges faced by continued miniaturization of CMOS devices, and futuristic alternatives. Device structures on the commercial and research levels analyzed in detail include: * Heterostructure field effect transistors * Bipolar and CMOS transistors * Resonant tunneling diodes * Real space transfer transistors * Quantum dot cellular automata * Single electron transistors The book contains many homework exercises at the end of each chapter, and a solution manual can be obtained for instructors. Emphasizing the development of new technology, Theory of Modern Electronic Semiconductor Devices is an ideal companion to electrical and computer engineering graduate level courses and an essential reference for semiconductor device engineers.
Author: Keith Barnham Publisher: Cambridge University Press ISBN: 9780521599047 Category : Technology & Engineering Languages : en Pages : 408
Book Description
Low-Dimensional Semiconductor Structures offers a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication; electronic, optical, and transport properties; role in exploring new physical phenomena; and utilization in devices. The authors describe the epitaxial growth of semiconductors and the physical behavior of electrons and phonons in low-dimensional structures. They then go on to discuss nonlinear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references.
Author: Giorgio Margaritondo Publisher: Springer Science & Business Media ISBN: 9400930739 Category : Science Languages : en Pages : 348
Book Description
E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles
Author: Publisher: Academic Press ISBN: 0080864384 Category : Technology & Engineering Languages : en Pages : 481
Book Description
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. - The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed - Offers a complete, three-chapter review of resonant tunneling - Provides an emphasis on circuits as well as devices
Author: Vassil Palankovski
Author: Vassil Palankovski
Author: Giovanni Agostini
Author: Fedor T. Vasko
Author: Keh Yung Cheng
Author: Umesh Mishra
Author: Kevin F. Brennan
Author: Keith Barnham
Author: Giorgio Margaritondo
Author: Zh. I. Alferov
Author: