Author: Andrew G. Norman
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 344

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: C. R. Abernathy
Publisher:
ISBN:
Category : Dielectric devices
Languages : en
Pages : 432

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Book Description

Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 360

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 344

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: Michael Dudley
Publisher: Cambridge University Press
ISBN: 9781558997653
Category : Technology & Engineering
Languages : en
Pages : 344

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Book Description
Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300ºC, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.

Author: G. S. Nolas
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 498

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Book Description
The measure of a thermoelectric material is given by the material's figure of merit. For over three decades the best thermoelectric materials had a ZT = 1. Recently, however, there are reports of new methods of materials synthesis that result in improvements beyond this performance. In addition, rapid characterization, as well as faster theoretical modeling of thermoelectric materials, has resulted in a more rapid evaluation of new materials. This book offers a look at these results and provides a benchmark for the current state in the field of thermoelectric materials research and development. The focus is on new and innovative directions that will lead to the next generation thermoelectric materials for small-scale refrigeration and power generation applications. The book emphasizes the multidisciplinary nature of the research needed to advance the science and technology of the field. Both theoretical and experimental studies are featured. Topics include: low-dimensional systems and nanocomposites; devices; oxides; skutterudites; complex bulk materials and measurements; novel approaches; and thermoelectric materials and technology.

Author: Daniel J. Friedman
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 424

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author:
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 616

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, offers scientific and technological information on ferroelectric thin films from an international mix of academia, industry and government organizations.

Author: David A. LaVan
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 512

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Book Description
This volume, a continuation of the MEMS, NEMS, and molecular machines symposium of the 2002 MRS Fall Meeting, is devoted to the investigation of materials and device behavior at the micro-, nano-, and molecular scale as well as interdisciplinary work futhering the design and development of micro-, nano-, and molecular devices. New materials and fabrication techniques are introduced, and ongoing issues such as reliability, surface effects, processing and packaging, biocompatibility, and stability are discussed. Projects coupling micro-and nanoscale approaches to solve ongoing issues in the development of small-scale systems are featured. Topics include: nanotechnology; alternative fabrication techniques; micro- and nanofluidics; applied micro- and nanotechnology; mechanical properties; biotechnology and nanotechnology; alternative materials and metrology; and surface engineering and tribology.

Author: Norbert H. Nickel
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 216

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Book Description
The study of hydrogen in solids is of significant importance in modern technology. Often present in large concentrations by various growth techniques, hydrogen affects the structural, electronic, and optical properties of crystals. Isolated hydrogen is often electrically active, causing passivation or charge compensation of defects and impurities. Since the presidential proposal of the Freedom Car, hydrogen in semiconductors takes another twist as a potential source of clean fuel for the future. The study of hydrogen transport, diffusion, and chemical reaction in solids is, therefore, of significant social importance. But as often happens in science, different groups of researchers studying hydrogen in solids do not always speak the same language. For example, few people would consider silicon as a practical fuel storage material due to its weight, but in reality, aluminum hydrides have been seriously considered for such a purpose. The knowledge acquired in the last half century for hydrogen in conventional semiconductors has not been effectively transferred to the study of hydrogen storage in emerging semiconductors such as carbon nanotubes. This volume brings together scientists from various research areas to encourage cross fertilization and wider dissemination of the advances in this important field of study. Highlights include recent developments in the understanding of light-induced metastability in amorphous silicon, hydrogen in zinc oxide as a means of n-type doping, and hydrogen doping of dilute nitrides that modifies the bandgap in some rather surprising ways. Hydrogen interaction with donors and acceptors is a never-ending story that is also featured here. Topics include: hydrogen in elemental semiconductors; hydrogen in oxides; and general properties of hydrogen in semiconductors.