Author: Thomas Andrew Langdo
Publisher:
ISBN:
Category : Nanostructured materials
Languages : en
Pages : 220
Book Description
(Cont.) By a combination of interferometric lithography Si/SiO2 substrate patterning and Ge selective epitaxial growth, we have demonstrated threading dislocation blocking at the oxide sidewall which shows promise for dislocation filtering and the fabrication of low defect density Ge on Si for III-V device integration. Defects at the Ge film surface only arise at the merging of epitaxial lateral overgrowth (ELO) fronts from neighboring holes. These results confirm that epitaxial necking can be used to reduce threading dislocation density in any lattice-mismatched systems where dislocations are not parallel to growth directions. Investigation of Ge selective growth in micron-sized SiO2 features by plan-view TEM shows that substrate patterning on the order of microns is insufficient to filter dislocations in a large mismatch system ([epsilon]> 2%). Ge p-i-n photodetectors were selectively grown in micron-sized SiO2/Si features to correlate materials properties with electrical characteristics. For chemical protection and compatibility with Si microelectronics, Ge photodetector regions were capped with a thin n+ Si layer. Photodetectors fabricated on unpatterned substrates demonstrated leakage currents comparable to published results on Ge on Si photodetectors while leakage currents were noticeably degraded in devices grown on patterned substrates.
Selective SiGe Nanostructures
Author: Thomas Andrew Langdo
Publisher:
ISBN:
Category : Nanostructured materials
Languages : en
Pages : 220
Book Description
(Cont.) By a combination of interferometric lithography Si/SiO2 substrate patterning and Ge selective epitaxial growth, we have demonstrated threading dislocation blocking at the oxide sidewall which shows promise for dislocation filtering and the fabrication of low defect density Ge on Si for III-V device integration. Defects at the Ge film surface only arise at the merging of epitaxial lateral overgrowth (ELO) fronts from neighboring holes. These results confirm that epitaxial necking can be used to reduce threading dislocation density in any lattice-mismatched systems where dislocations are not parallel to growth directions. Investigation of Ge selective growth in micron-sized SiO2 features by plan-view TEM shows that substrate patterning on the order of microns is insufficient to filter dislocations in a large mismatch system ([epsilon]> 2%). Ge p-i-n photodetectors were selectively grown in micron-sized SiO2/Si features to correlate materials properties with electrical characteristics. For chemical protection and compatibility with Si microelectronics, Ge photodetector regions were capped with a thin n+ Si layer. Photodetectors fabricated on unpatterned substrates demonstrated leakage currents comparable to published results on Ge on Si photodetectors while leakage currents were noticeably degraded in devices grown on patterned substrates.
Publisher:
ISBN:
Category : Nanostructured materials
Languages : en
Pages : 220
Book Description
(Cont.) By a combination of interferometric lithography Si/SiO2 substrate patterning and Ge selective epitaxial growth, we have demonstrated threading dislocation blocking at the oxide sidewall which shows promise for dislocation filtering and the fabrication of low defect density Ge on Si for III-V device integration. Defects at the Ge film surface only arise at the merging of epitaxial lateral overgrowth (ELO) fronts from neighboring holes. These results confirm that epitaxial necking can be used to reduce threading dislocation density in any lattice-mismatched systems where dislocations are not parallel to growth directions. Investigation of Ge selective growth in micron-sized SiO2 features by plan-view TEM shows that substrate patterning on the order of microns is insufficient to filter dislocations in a large mismatch system ([epsilon]> 2%). Ge p-i-n photodetectors were selectively grown in micron-sized SiO2/Si features to correlate materials properties with electrical characteristics. For chemical protection and compatibility with Si microelectronics, Ge photodetector regions were capped with a thin n+ Si layer. Photodetectors fabricated on unpatterned substrates demonstrated leakage currents comparable to published results on Ge on Si photodetectors while leakage currents were noticeably degraded in devices grown on patterned substrates.
Silicon-Germanium (SiGe) Nanostructures
Author: Y. Shiraki
Publisher: Elsevier
ISBN: 0857091425
Category : Technology & Engineering
Languages : en
Pages : 649
Book Description
Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Publisher: Elsevier
ISBN: 0857091425
Category : Technology & Engineering
Languages : en
Pages : 649
Book Description
Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Silicon-based Nanomaterials
Author: Handong Li
Publisher: Springer Science & Business Media
ISBN: 1461481694
Category : Technology & Engineering
Languages : en
Pages : 414
Book Description
A variety of nanomaterials have excellent optoelectronic and electronic properties for novel device applications. At the same time, and with advances in silicon integrated circuit (IC) techniques, compatible Si-based nanomaterials hold promise of applying the advantages of nanomaterials to the conventional IC industry. This book focuses not only on silicon nanomaterials, but also summarizes up-to-date developments in the integration of non-silicon nanomaterials on silicon. The book showcases the work of leading researchers from around the world who address such key questions as: Which silicon nanomaterials can give the desired optical, electrical, and structural properties, and how are they prepared? What nanomaterials can be integrated on to a silicon substrate and how is this accomplished? What Si-based nanomaterials may bring a breakthrough in this field? These questions address the practical issues associated with the development of nanomaterial-based devices in applications areas such as solar cells, luminous devices for optical communication (detectors, lasers), and high mobility transistors. Investigation of silicon-based nanostructures is of great importance to make full use of nanomaterials for device applications. Readers will receive a comprehensive view of Si-based nanomaterials, which will hopefully stimulate interest in developing novel nanostructures or techniques to satisfy the requirements of high performance device applications. The goal is to make nanomaterials the main constituents of the high performance devices of the future.
Publisher: Springer Science & Business Media
ISBN: 1461481694
Category : Technology & Engineering
Languages : en
Pages : 414
Book Description
A variety of nanomaterials have excellent optoelectronic and electronic properties for novel device applications. At the same time, and with advances in silicon integrated circuit (IC) techniques, compatible Si-based nanomaterials hold promise of applying the advantages of nanomaterials to the conventional IC industry. This book focuses not only on silicon nanomaterials, but also summarizes up-to-date developments in the integration of non-silicon nanomaterials on silicon. The book showcases the work of leading researchers from around the world who address such key questions as: Which silicon nanomaterials can give the desired optical, electrical, and structural properties, and how are they prepared? What nanomaterials can be integrated on to a silicon substrate and how is this accomplished? What Si-based nanomaterials may bring a breakthrough in this field? These questions address the practical issues associated with the development of nanomaterial-based devices in applications areas such as solar cells, luminous devices for optical communication (detectors, lasers), and high mobility transistors. Investigation of silicon-based nanostructures is of great importance to make full use of nanomaterials for device applications. Readers will receive a comprehensive view of Si-based nanomaterials, which will hopefully stimulate interest in developing novel nanostructures or techniques to satisfy the requirements of high performance device applications. The goal is to make nanomaterials the main constituents of the high performance devices of the future.
Silicon-Based Nanomaterials
Author: Robert W. Kelsall
Publisher: MDPI
ISBN: 3039210424
Category : Technology & Engineering
Languages : en
Pages : 94
Book Description
Silicon has been proven to be remarkably resilient as a commercial electronic material. The microelectronics industry has harnessed nanotechnology to continually push the performance limits of silicon devices and integrated circuits. Rather than shrinking its market share, silicon is displacing “competitor” semiconductors in domains such as high-frequency electronics and integrated photonics. There are strong business drivers underlying these trends; however, an important contribution is also being made by research groups worldwide, who are developing new configurations, designs, and applications of silicon-based nanoscale and nanostructured materials. This Special Issue features a selection of papers which illustrate recent advances in the preparation of chemically or physically engineered silicon-based nanostructures and their application in electronic, photonic, and mechanical systems.
Publisher: MDPI
ISBN: 3039210424
Category : Technology & Engineering
Languages : en
Pages : 94
Book Description
Silicon has been proven to be remarkably resilient as a commercial electronic material. The microelectronics industry has harnessed nanotechnology to continually push the performance limits of silicon devices and integrated circuits. Rather than shrinking its market share, silicon is displacing “competitor” semiconductors in domains such as high-frequency electronics and integrated photonics. There are strong business drivers underlying these trends; however, an important contribution is also being made by research groups worldwide, who are developing new configurations, designs, and applications of silicon-based nanoscale and nanostructured materials. This Special Issue features a selection of papers which illustrate recent advances in the preparation of chemically or physically engineered silicon-based nanostructures and their application in electronic, photonic, and mechanical systems.
SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices
Author: D. Harame
Publisher: The Electrochemical Society
ISBN: 1566778255
Category : Science
Languages : en
Pages : 1066
Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Publisher: The Electrochemical Society
ISBN: 1566778255
Category : Science
Languages : en
Pages : 1066
Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Growth and Self-organization of SiGe Nanostructures
SiGe--materials, Processing, and Devices
Author: David Louis Harame
Publisher: The Electrochemical Society
ISBN: 9781566774208
Category : Science
Languages : en
Pages : 1242
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566774208
Category : Science
Languages : en
Pages : 1242
Book Description
Device Applications of Silicon Nanocrystals and Nanostructures
Author: Nobuyoshi Koshida
Publisher: Springer
ISBN: 9780387786889
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.
Publisher: Springer
ISBN: 9780387786889
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.
Device Applications of Silicon Nanocrystals and Nanostructures
Author: Nobuyoshi Koshida
Publisher: Springer
ISBN: 9781489977373
Category :
Languages : en
Pages : 360
Book Description
This comprehensive, up-to-date book systematically covers recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important. The chapters include a number of examples of device applications.
Publisher: Springer
ISBN: 9781489977373
Category :
Languages : en
Pages : 360
Book Description
This comprehensive, up-to-date book systematically covers recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important. The chapters include a number of examples of device applications.
Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates
Author: K. Eberl
Publisher: Springer Science & Business Media
ISBN: 9401103410
Category : Technology & Engineering
Languages : en
Pages : 386
Book Description
Proceedings of the NATO Advanced Research Workshop, Ringberg in Rottach Egern, Germany, February 20--24, 1995
Publisher: Springer Science & Business Media
ISBN: 9401103410
Category : Technology & Engineering
Languages : en
Pages : 386
Book Description
Proceedings of the NATO Advanced Research Workshop, Ringberg in Rottach Egern, Germany, February 20--24, 1995