Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Springer Handbook of Crystal Growth PDF full book. Access full book title Springer Handbook of Crystal Growth by Govindhan Dhanaraj. Download full books in PDF and EPUB format.
Author: Govindhan Dhanaraj Publisher: Springer Science & Business Media ISBN: 3540747613 Category : Science Languages : en Pages : 1823
Book Description
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Author: Govindhan Dhanaraj Publisher: Springer Science & Business Media ISBN: 3540747613 Category : Science Languages : en Pages : 1823
Book Description
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Author: Tsunenobu Kimoto Publisher: John Wiley & Sons ISBN: 1118313550 Category : Technology & Engineering Languages : en Pages : 565
Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Zhe Chuan Feng Publisher: CRC Press ISBN: 0429583958 Category : Science Languages : en Pages : 465
Book Description
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Author: Chuan Feng Zhe Publisher: CRC Press ISBN: 1591690234 Category : Technology & Engineering Languages : en Pages : 412
Book Description
This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.
Author: Cary Y. Yang Publisher: Springer Science & Business Media ISBN: 3642848044 Category : Science Languages : en Pages : 439
Book Description
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Author: K.F. Jensen Publisher: Elsevier ISBN: 0444596909 Category : Science Languages : en Pages : 215
Book Description
The chemical aspects of materials processing used for electronic applications, e.g. Si, III-V compounds, superconductors, metallization materials, are covered in this volume. Significant recent advances have occurred in the development of new volatile precursors for the fabrication of III-V semiconductor and metal [Cu, W] films by OMCVD. Some fundamentally new and wide-ranging applications have been introduced in recent times. Experimental and modeling studies regarding deposition kinetics, operating conditions and transport as well as properties of films produced by PVD, CVD and PECVD are discussed. The thirty papers in this volume report on many other significant topics also. Research workers involved in these aspects of materials technology may find here some new perspectives with which to augment their projects.
Author: Xin Jiang Publisher: John Wiley & Sons ISBN: 1119313392 Category : Technology & Engineering Languages : en Pages : 300
Book Description
Connects knowledge about synthesis, properties, and applications of novel carbon materials and carbon-based composites This book provides readers with new knowledge on the synthesis, properties, and applications of novel carbon materials and carbon-based composites, including thin films of silicon carbide, carbon nitrite, and their related composites. It examines the direct bottom-up synthesis of the carbon-based composite systems and their potential applications, and discusses the growth mechanism of the composite structures. It features applications that range from mechanical, electronic, chemical, biochemical, medical, and environmental to functional devices. Novel Carbon Materials and Composites: Synthesis, Properties and Applications covers an overview of the synthesis, properties, and applications of novel carbon materials and composites. Especially, it covers everything from chemical vapor deposition of silicon carbide films and their electrochemical applications to applications of various novel carbon materials for the construction of supercapacitors to chemical vapor deposition of diamond/silicon carbide composite films to the covering and fabrication processes of nanodot composites. Looks at the recent progress and achievements in the fields of novel carbon materials and composites, including thin films of silicon carbide, carbon nitrite, and their related composites Discusses the many applications of carbon materials and composites Focuses on the hot topic of the fabrication of carbon-based composite materials and their abilities to extend the potential applications of carbon materials Published as a title in the new Wiley book series Nanocarbon Chemistry and Interfaces. Novel Carbon Materials and Composites: Synthesis, Properties and Applications is an important book for academic researchers and industrial scientists working in the fabrication and application of carbon materials and carbon-based composite materials and related fields.
Author: Gemma Rius Publisher: CRC Press ISBN: 1351736221 Category : Science Languages : en Pages : 248
Book Description
This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Author: Govindhan Dhanaraj
Author: Yangchin Shih
Author: Govindhan Dhanaraj
Author: Tsunenobu Kimoto
Author: Zhe Chuan Feng
Author: Chuan Feng Zhe
Author: Cary Y. Yang
Author: K.F. Jensen
Author: Xin Jiang
Author: Gemma Rius
Author: Karl E. Spear