Author: Nemanja Pešović
Publisher:
ISBN:
Category :
Languages : en
Pages : 149
Book Description
Keywords: selective, epitaxy, sige, source, drain, MOSFET, transistor.
Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-germanium Films from Disilane, Germane and Chlorine for Source/drain Junctions of Nanoscale CMOS
Author: Nemanja Pešović
Publisher:
ISBN:
Category :
Languages : en
Pages : 149
Book Description
Keywords: selective, epitaxy, sige, source, drain, MOSFET, transistor.
Publisher:
ISBN:
Category :
Languages : en
Pages : 149
Book Description
Keywords: selective, epitaxy, sige, source, drain, MOSFET, transistor.
Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-Germanium Films from Disilane, Germane and Chlorine for Source/ Drain Junctions of Nanoscale CMOS.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
As metal-oxide semiconductor field effect transistors (MOSFETs) are scaled for higher speed and reduced power, new challenges are imposed on the source/drain junctions and their contacts. Future junction technologies are required to produce ultra-shallow junctions with junction depths as low as 4 nm, above-equilibrium dopant activation, super-abrupt doping profiles and specific contact resistivity values below 1x10− & 8312; &!cm2. Recently, selectively deposited, boron doped Si1−[subscript x]Ge[subscript x] junctions have been proposed to overcome these challenges. Success of technology relies on selective chemical vapor deposition of the process and satisfying stringent requirements for process integration. In the present work, the effects of process conditions on selective deposition of heavily boron doped Si1−[subscript x]Ge[subscript x] is investigated using Si2H6 and GeH4 as the precursors. It was found that addition of large amounts of diborane resulted in selectivity degradation. Addition of chlorine improved selectivity for both doped and undoped Si1−[subscript x]Ge[subscript x] depositions. It was shown that addition of chlorine to the undoped Si1−Ge[subscript x] deposition chemistry resulted in reduced surface roughness. It is proposed that chlorine preferentially segregates to the surface of the deposited films, and act as the surfactant. However, it was also found that addition of chlorine did not significantly impact the surface morphology of heavily boron doped Si1−Ge[subscript x]. It was shown that addition of chlorine strongly interfered with Ge and B incorporation. Furthermore, it was found that chlorine resulted in enhanced Ge but reduced B incorporation. It is proposed that chlorine adsorption on the growing surfaces reduced the available sites for boron while promoting SiCl2 desorption at lower temperatures. Increase in deposition temperature for a.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
As metal-oxide semiconductor field effect transistors (MOSFETs) are scaled for higher speed and reduced power, new challenges are imposed on the source/drain junctions and their contacts. Future junction technologies are required to produce ultra-shallow junctions with junction depths as low as 4 nm, above-equilibrium dopant activation, super-abrupt doping profiles and specific contact resistivity values below 1x10− & 8312; &!cm2. Recently, selectively deposited, boron doped Si1−[subscript x]Ge[subscript x] junctions have been proposed to overcome these challenges. Success of technology relies on selective chemical vapor deposition of the process and satisfying stringent requirements for process integration. In the present work, the effects of process conditions on selective deposition of heavily boron doped Si1−[subscript x]Ge[subscript x] is investigated using Si2H6 and GeH4 as the precursors. It was found that addition of large amounts of diborane resulted in selectivity degradation. Addition of chlorine improved selectivity for both doped and undoped Si1−[subscript x]Ge[subscript x] depositions. It was shown that addition of chlorine to the undoped Si1−Ge[subscript x] deposition chemistry resulted in reduced surface roughness. It is proposed that chlorine preferentially segregates to the surface of the deposited films, and act as the surfactant. However, it was also found that addition of chlorine did not significantly impact the surface morphology of heavily boron doped Si1−Ge[subscript x]. It was shown that addition of chlorine strongly interfered with Ge and B incorporation. Furthermore, it was found that chlorine resulted in enhanced Ge but reduced B incorporation. It is proposed that chlorine adsorption on the growing surfaces reduced the available sites for boron while promoting SiCl2 desorption at lower temperatures. Increase in deposition temperature for a.
Chemical Vapor Deposition
Author: John Milton Blocher
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 426
Book Description
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 426
Book Description
Proceedings of the Eighth International Conference on Chemical Vapor Deposition
Author: J. M. Blocher
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 844
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 844
Book Description
Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition
Author: Theodore M. Besmann
Publisher: The Electrochemical Society
ISBN: 9781566771559
Category : Science
Languages : en
Pages : 922
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566771559
Category : Science
Languages : en
Pages : 922
Book Description
Modelling and Control of Silicon and Germanium Thin Film Chemical Vapor Deposition
Author: Scott Anderson Middlebrooks
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
Book Description
Thin Film Deposition Employing Supersonic Molecular Beams
Author: Todd William Schroeder
Publisher:
ISBN:
Category :
Languages : en
Pages : 660
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 660
Book Description
Chemical Vapor Deposition of Silicon-germanium-carbon Films
Author: Pankaj Neelkanth Joshi
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 294
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 294
Book Description
Chemical Vapor Deposition
Author: John Milton Blocher
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 484
Book Description
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 484
Book Description
Handbook of Chemical Vapor Deposition
Author: Hugh O. Pierson
Publisher: William Andrew
ISBN:
Category : Computers
Languages : en
Pages : 480
Book Description
A comprehensive overview of chemical vapor deposition (CVD), an extremely versatile process for manufacturing coatings, powders, fibers, and monolithic components.
Publisher: William Andrew
ISBN:
Category : Computers
Languages : en
Pages : 480
Book Description
A comprehensive overview of chemical vapor deposition (CVD), an extremely versatile process for manufacturing coatings, powders, fibers, and monolithic components.