Selected Energy Epitaxial Deposition (SEED) and Low Energy Electron Microscopy (LEEM) of AlN, GaN and SiC Thin Films PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages : 9
Book Description
The report objectives are: * Optimize low-temperature growth of GaN using seeded supersonic molecular beams of NH3 and triethylgallium (TEG). * Determine the optimum growth parameters by conducting in situ real-time observations of the heteroepitaxial growth of GaN(0001) on 6H-SiC(0001) substrates using the SSJ source seeded with NH3 with the low-energy electron microscope (LEEM). * Investigate effects of precursor translational energy on growth kinetics and morphology of GaN films.
Author: Publisher: ISBN: Category : Languages : en Pages : 9
Book Description
The report objectives are: * Optimize low-temperature growth of GaN using seeded supersonic molecular beams of NH3 and triethylgallium (TEG). * Determine the optimum growth parameters by conducting in situ real-time observations of the heteroepitaxial growth of GaN(0001) on 6H-SiC(0001) substrates using the SSJ source seeded with NH3 with the low-energy electron microscope (LEEM). * Investigate effects of precursor translational energy on growth kinetics and morphology of GaN films.
Author: Publisher: ISBN: Category : Languages : en Pages : 20
Book Description
As-received wafers of n- and p-type 6H-SiC(0001) were etched via gaseous HCl in H2 at 1350 deg C at NASA-Lewis to remove cutting and polishing scratches from the surface; however, etch pits were created. GaN films have been deposited on Si(100) and Al2O3(0001) substrates using triethylgallium and NH3 seeded into highly expanded He gas streams. A two-step deposition process that repeatedly resulted in continuous crystalline GaN films has been developed. The microstructure and composition of the resultant films were characterized by SEM, RHEED and AES and film character correlated to deposition conditions. Assembly of a new dual seeded beam deposition and film analysis facility is underway. In addition, the main chamber of a dual Colutron ion-beam deposition system for the deposition of high-quality SiC and GaN films is nearing completion. Ion sources have been assembled and leak-tested. Preliminary results on the characterization of a seeded supersonic molecular beam source are presented. A room temperature beam of 10% NH3 with a source pressure of 25 kTorr and a 25 micrometers nozzle produces NH3 molecules with mean energies of 0.264 eV and an energy spread of 0.068 eV. Modifications to the existing system are discussed.
Author: J Matthews Publisher: Elsevier ISBN: 0323152120 Category : Science Languages : en Pages : 401
Book Description
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Author: Publisher: Elsevier ISBN: 0080532675 Category : Science Languages : en Pages : 673
Book Description
Although there has been steady progress in understanding aspects of epitaxial growth throughout the last 30 years of modern surface science, work in this area has intensified greatly in the last 5 years. A number of factors have contributed to this expansion. One has been the general trend in surface science to tackle problems of increasing complexity as confidence is gained in the methodology, so for example, the role of oxide/metal interfaces in determining the properties of many practical supported catalysts is now being explored in greater detail. A second factor is the recognition of the potential importance of artificial multilayer materials not only in semiconductor devices but also in metal/metal systems because of their novel magnetic properties. Perhaps even more important than either of these application areas, however, is the newly-discovered power of scanning probe microscopies, and most notably scanning tunneling microscopy (STM), to provide the means to study epitaxial growth phenomena on an atomic scale under a wide range of conditions. These techniques have also contributed to revitalised interest in methods of fabricating and exploiting artificial structures (lateral as well as in layers) on a nanometre scale.This volume, on Growth and Properties of Ultrathin Epitaxial Layers, includes a collection of articles which reflects the present state of activity in this field. The emphasis is on metals and oxides rather than semiconductors.
Author: James S. Speck Publisher: ISBN: Category : Science Languages : en Pages : 588
Book Description
Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.
Author: Takashi Hariu Publisher: World Scientific ISBN: 9789971508395 Category : Technology & Engineering Languages : en Pages : 356
Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Author: Max G Lagally Publisher: World Scientific ISBN: 9814496162 Category : Science Languages : en Pages : 508
Book Description
This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories — the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.
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Author: J Matthews
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Author: Albert-László Barabási
Author: James S. Speck
Author: Takashi Hariu
Author: Max G Lagally