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Author: P Aigrain Publisher: Elsevier ISBN: 1483151573 Category : Science Languages : en Pages : 81
Book Description
Selected Constants Relative to Semi-Conductors presents the physical constants of semiconductors in Table form. The values of the electronic properties of semiconductors presented in the Table are parameters intended for use in theoretical and phenomenological equations relative to the band theory for these materials. In addition to data specific to band structure, the Table also includes mobilities of electrons and holes and their variation with temperature. Data of a general physical character are also presented, since the researcher very often finds use for values of this type. The following quantities are given when available: symmetry group and crystal parameters, refractive index, dielectric constant, effective ionic charge, work function, photoemission work function, piezoresistance coefficient, elastic coefficients, phonon temperature, Debye temperature, magnetic susceptibility, coefficient of linear expansion, fusion temperature, sublimation temperature, specific heat at constant pressure, latent heat of fusion, latent heat of sublimation, thermal conductivity, disorder factor, and density.
Author: P Aigrain Publisher: Elsevier ISBN: 1483151573 Category : Science Languages : en Pages : 81
Book Description
Selected Constants Relative to Semi-Conductors presents the physical constants of semiconductors in Table form. The values of the electronic properties of semiconductors presented in the Table are parameters intended for use in theoretical and phenomenological equations relative to the band theory for these materials. In addition to data specific to band structure, the Table also includes mobilities of electrons and holes and their variation with temperature. Data of a general physical character are also presented, since the researcher very often finds use for values of this type. The following quantities are given when available: symmetry group and crystal parameters, refractive index, dielectric constant, effective ionic charge, work function, photoemission work function, piezoresistance coefficient, elastic coefficients, phonon temperature, Debye temperature, magnetic susceptibility, coefficient of linear expansion, fusion temperature, sublimation temperature, specific heat at constant pressure, latent heat of fusion, latent heat of sublimation, thermal conductivity, disorder factor, and density.
Author: V. I. Fistul Publisher: Springer Science & Business Media ISBN: 146848821X Category : Science Languages : en Pages : 428
Book Description
Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
Author: T. F. Connolly Publisher: Springer Science & Business Media ISBN: 1468462016 Category : Science Languages : en Pages : 223
Book Description
And often on request from the issuing installation. USAEC reports are also available from International Atomic Energy Agency Kaerntnerring A 1010 Vienna, Austria National Lending Library Boston Spa, England Monographs and reports of the National Bureau 01 Standards are for sale by Superintendent of Documents U.S. Government Printing Office Washington, D.C. 20402 Theses, listed as Dissertation Abstracts + number, are available in North and South America from University Microfilms Dissertation Copies P.O. Box 1764 Ann Arbor, Michigan 48106 and elsewhere from University Microfilms, Ltd. St. John's Road Tylers Green Penn, Buckinghamshire England Conlenls Addendum ... xiii 1. Information Centers and Other Services ... 1 2. Journals ... 3 3. Methods of Crystal Growth - Books and Reviews ... 5 4. Semiconductors - General, Reviews, and Bibliographies ... 11 5. 1-V -VI Compounds ... 21 6. li-IV - V2 Compounds ... 23 7. II - V Compounds ... 29 a. General, Reviews, and Bibliographies ... 29 b. Zinc Compounds ... 30 1. Zn3P2" .. . .. . .. . . .. ... .. ... . .. ... . . .. ... .. . . 30 2. ZnAs ... 30 3. ZnSb ... 30 4. Zn Mixed Systems ... 31 c. Cadmium Compounds ... 31 31 1. Cd3P2' ... 2. Cd3As2 ... 31 3. CdSb, Cd3Sb2 ... 33 37 8. li-VI Compounds ... a. General, Reviews, and Bibliographies ... ... 37 ... b. Zinc Compounds ... . ... ... 39 ... 1. ZnO ... 39 Preparation and Properties ... 39 Electrical Properties ... ... 41 ... Optical Properties ... ... 45 ... Physical Properties and Structure ... ... 47 ... 2. ZnS ... 49 3. ZnSe ... 52 4. ZnTe ... ' ... 54 5. Zn Mixed Systems. ... ... 55 ... 55 c. Cadmium Compounds ... 55 1. CdS ... 2. CdSe ... 60 3. CdTe ... 61 4. CdTernaries ... ... 62 ... d. Mercury Compounds ... ... . 64 ...
Author: A. G. Milnes Publisher: Springer Science & Business Media ISBN: 9401170215 Category : Science Languages : en Pages : 1014
Book Description
For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.
Author: B. L. Sharma Publisher: Elsevier ISBN: 1483280861 Category : Technology & Engineering Languages : en Pages : 225
Book Description
Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers. Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then introduced to the energy band profiles of isotype and anisotype heterojunctions, the practical aspects of their fabrication and characterization, and their electronic and optoelectronic properties. Some methods used in the preparation of heterojunctions are also described, including the chemical method, solution growth method, alloying method, and sputtering method. The remaining chapters focus on the characterization of the grown layers, examples of heterojunction devices, and experimental work on heterojunctions. This monograph is intended for research workers and graduate students.
Author: Ming Fu Li Publisher: World Scientific ISBN: 1908978384 Category : Technology & Engineering Languages : en Pages : 529
Book Description
This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering./a
Author: P Aigrain
Author: P Aigrain
Author: C. Benoit à la Guillaume
Author: 
Author: Transistor Applications, Inc
Author: V. I. Fistul
Author: T. F. Connolly
Author: A. G. Milnes
Author: L. Reggiani
Author: B. L. Sharma
Author: Ming Fu Li