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Author: Young-Woon Kim Publisher: ISBN: Category : Languages : en Pages : 194
Book Description
The effects on microstructure and microchemistry of ion irradiation during AlCu film growth on a-SiO$sb2$ by two directional sputtering techniques--collimated magnetron sputter deposition (CMSD) and ionized magnetron sputter deposition (IMSD)--were investigated. Both sets of films have dense columnar microstructures with (111) preferred orientation (PO). IMSD layers exhibited competitive column growth showing an order of magnitude higher degree of (111) orientation with much smaller azimuthal spread. The IMSD films were tensile while the CMSD films were slightly compressive. In order to investigate the role of low-energy ion/surface interactions in a more controlled way, I constructed a double-grid, electron-impact, ultra-high-vacuum compatible, low-energy primary-ion deposition (PID) source capable of operating with low-vapor-pressure materials and providing ion current densities $>$100 $mu$A cm$sp{-2}$ at d = 400 mm with beam energies of 5-100 eV. Since the IMSD experiments showed that PO can be controlled by the primary-ion fraction in the growth flux, experiments were conducted to investigate the effects of Al self-ion irradiation in Al layers grown on a-SiO$sb2.$ All films were strongly (111) with the degree of PO increasing with both increasing ion energy and ion/neutral flux ratio. The mosaicity decreased continuously from 10.6$spcirc$ to 2.2$spcirc$ as the ion energy E$sb{rm Alsp+}$ increased from 0 to 120 eV. Changing E$sb{rm Alsp+}$ after the formation of a continuous layer had minimal effect on subsequent film texture indicating that the degree of PO is controlled during nucleation and/or coalescence while local pseudomorphic forces dominate thereafter. The use of PID buffer layers was also investigated for the heteroepitaxial growth of Ge on Si(001). Epitaxial Ge layers with no detectable ion-induced damage were obtained with $rm E sb{Gesp+}le15$ eV at $rm Tsb{s}ge300spcirc C$ and $rm E sb{Gesp+}le45$ eV at $rm Tsb{s}ge400spcirc C$. However, at lower T$sb{rm s}$ and/or higher E$sb{rm Gesp+},$ local amorphous regions were formed within a single-crystalline matrix. Using such buffer layers to partially absorb the Ge/Si mismatch stress, dislocation densities in Ge overlayers were decreased by an order of magnitude.
Author: Young-Woon Kim Publisher: ISBN: Category : Languages : en Pages : 194
Book Description
The effects on microstructure and microchemistry of ion irradiation during AlCu film growth on a-SiO$sb2$ by two directional sputtering techniques--collimated magnetron sputter deposition (CMSD) and ionized magnetron sputter deposition (IMSD)--were investigated. Both sets of films have dense columnar microstructures with (111) preferred orientation (PO). IMSD layers exhibited competitive column growth showing an order of magnitude higher degree of (111) orientation with much smaller azimuthal spread. The IMSD films were tensile while the CMSD films were slightly compressive. In order to investigate the role of low-energy ion/surface interactions in a more controlled way, I constructed a double-grid, electron-impact, ultra-high-vacuum compatible, low-energy primary-ion deposition (PID) source capable of operating with low-vapor-pressure materials and providing ion current densities $>$100 $mu$A cm$sp{-2}$ at d = 400 mm with beam energies of 5-100 eV. Since the IMSD experiments showed that PO can be controlled by the primary-ion fraction in the growth flux, experiments were conducted to investigate the effects of Al self-ion irradiation in Al layers grown on a-SiO$sb2.$ All films were strongly (111) with the degree of PO increasing with both increasing ion energy and ion/neutral flux ratio. The mosaicity decreased continuously from 10.6$spcirc$ to 2.2$spcirc$ as the ion energy E$sb{rm Alsp+}$ increased from 0 to 120 eV. Changing E$sb{rm Alsp+}$ after the formation of a continuous layer had minimal effect on subsequent film texture indicating that the degree of PO is controlled during nucleation and/or coalescence while local pseudomorphic forces dominate thereafter. The use of PID buffer layers was also investigated for the heteroepitaxial growth of Ge on Si(001). Epitaxial Ge layers with no detectable ion-induced damage were obtained with $rm E sb{Gesp+}le15$ eV at $rm Tsb{s}ge300spcirc C$ and $rm E sb{Gesp+}le45$ eV at $rm Tsb{s}ge400spcirc C$. However, at lower T$sb{rm s}$ and/or higher E$sb{rm Gesp+},$ local amorphous regions were formed within a single-crystalline matrix. Using such buffer layers to partially absorb the Ge/Si mismatch stress, dislocation densities in Ge overlayers were decreased by an order of magnitude.
Author: Peter M. Martin Publisher: William Andrew ISBN: 0815520328 Category : Technology & Engineering Languages : en Pages : 932
Book Description
This 3e, edited by Peter M. Martin, PNNL 2005 Inventor of the Year, is an extensive update of the many improvements in deposition technologies, mechanisms, and applications. This long-awaited revision includes updated and new chapters on atomic layer deposition, cathodic arc deposition, sculpted thin films, polymer thin films and emerging technologies. Extensive material was added throughout the book, especially in the areas concerned with plasma-assisted vapor deposition processes and metallurgical coating applications.
Author: D. T. J. Hurle Publisher: Elsevier ISBN: 148329112X Category : Science Languages : en Pages : 697
Book Description
Volume I - Fundamentals addresses the underlying scientific principles relevant to all the techniques of crystal growth. Following a Foreword by Professor Sir Charles Frank and an historical introduction, the first part contains eight chapters devoted to thermodynamic, kinetic and crystallographic aspects including computer simulation by molecular dynamics and Monte Carlo methods. The second part, comprising a further seven chapters, is devoted to bulk transport effects and the influence of transport-limited growth on the stability of both isolated growth forms (such as the dendrite) and arrays, and on the cooperative effects which lead to pattern formation. All the presentations are superbly authoritative.
Author: Daniel Lundin Publisher: Elsevier ISBN: 0128124555 Category : Technology & Engineering Languages : en Pages : 400
Book Description
High Power Impulse Magnetron Sputtering: Fundamentals, Technologies, Challenges and Applications is an in-depth introduction to HiPIMS that emphasizes how this novel sputtering technique differs from conventional magnetron processes in terms of both discharge physics and the resulting thin film characteristics. Ionization of sputtered atoms is discussed in detail for various target materials. In addition, the role of self-sputtering, secondary electron emission and the importance of controlling the process gas dynamics, both inert and reactive gases, are examined in detail with an aim to generate stable HiPIMS processes. Lastly, the book also looks at how to characterize the HiPIMS discharge, including essential diagnostic equipment. Experimental results and simulations based on industrially relevant material systems are used to illustrate mechanisms controlling nucleation kinetics, column formation and microstructure evolution. - Includes a comprehensive description of the HiPIMS process from fundamental physics to applications - Provides a distinctive link between the process plasma and thin film communities - Discusses the industrialization of HiPIMS and its real world applications
Author: John Sanchez, Jr Publisher: Cambridge University Press ISBN: 9781107412170 Category : Technology & Engineering Languages : en Pages : 508
Book Description
A wide variety of materials systems and deposition strategies have been developed to produce epitaxial and polycrystalline thin films. In particular, controlling the morphology and microstructure of metal films at the nanometer and/or micron scale has become crucial for applications such as giant magnetoresistive devices, contacts and diffusion barriers in integrated circuits and photovoltaics, and multilayer X-ray mirrors. This book, first published in 2001, focuses on the interactions between different mechanisms of microstructure evolution and film-growth conditions. Two sections of the volume, including a joint effort with Symposium R, Morphology and Dynamics of Crystal Surfaces in Molecular and Colloid Systems, highlight the fundamental mechanisms of epitaxial growth. Additional topics include: multilayers - stress in thin films; early stages of film growth - mechanical properties; texture in polycrystalline films; grain growth - barrier layers; and silicides and organic thin films - pulsed laser deposition.
Author: O. Auciello Publisher: Springer Science & Business Media ISBN: 9400919468 Category : Science Languages : en Pages : 548
Book Description
An understanding of the processes involved in the basic and applied physics and chemistry of the interaction of plasmas with materials is vital to the evolution of technologies such as those relevant to microelectronics, fusion and space. The subjects dealt with in the book include: the physics and chemistry of plasmas, plasma diagnostics, physical sputtering and chemical etching, plasma assisted deposition of thin films, ion and electron bombardment, and plasma processing of inorganic and polymeric materials. The book represents a concentration of a substantial amount of knowledge acquired in this area - knowledge which was hitherto widely scattered throughout the literature - and thus establishes a baseline reference work for both established and tyro research workers.
Author: Víctor Gervilla Palomar Publisher: Linköping University Electronic Press ISBN: 9176851443 Category : Languages : en Pages : 46
Book Description
Thin films are nanoscale layers of material, with exotic properties useful in diverse areas, ranging from biomedicine to nanoelectronics and surface protection. Film properties are not only determined by their chemical composition, but also by their microstructure and roughness, features that depend crucially on the growth process due to the inherent out-of equilibrium nature of the film deposition techniques. This fact suggest that it is possible to control film growth, and in turn film properties, in a knowledge-based manner by tuning the deposition conditions. This requires a good understanding of the elementary film-forming processes, and the way by which they are affected by atomic-scale kinetics. The kinetic Monte Carlo (kMC) method is a simulation tool that can model film evolution over extended time scales, of the order of microseconds, and beyond, and thus constitutes a powerful complement to experimental research aiming to obtain an universal understanding of thin film formation and morphological evolution. In this work, kMC simulations, coupled with analytical modelling, are used to investigate the early stages of formation of metal films and nanostructures supported on weakly-interacting substrates. This starts with the formation and growth of faceted 3D islands, that relies first on facile adatom ascent at single-layer island steps and subsequently on facile adatom upward diffusion from the base to the top of the island across its facets. Interlayer mass transport is limited by the rate at which adatoms cross from the sidewall facets to the island top, a process that determines the final height of the islands and leads non-trivial growth dynamics, as increasing temperatures favour 3D growth as a result of the upward transport. These findings explain the high roughness observed experimentally in metallic films grown on weakly-interacting substrates at high temperatures. The second part of the study focus on the next logical step of film formation, when 3D islands come into contact and fuse into a single one, or coalesce. The research reveals that the faceted island structure governs the macroscopic process of coalescence as well as its dynamics, and that morphological changes depend on 2D nucleation on the II facets. In addition, deposition during coalescence is found to accelerate the process and modify its dynamics, by contributing to the nucleation of new facets. This study provides useful knowledge concerning metal growth on weakly-interacting substrates, and, in particular, identifies the key atomistic processes controlling the early stages of formation of thin films, which can be used to tailor deposition conditions in order to achieve films with unique properties and applications.
Author: Young-Woon Kim
Author: Young-Woon Kim
Author: Peter M. Martin
Author: Adriana Eleni Lita
Author: 
Author: D. T. J. Hurle
Author: Daniel Lundin
Author: John Sanchez, Jr
Author: O. Auciello
Author: C. V. Thompson
Author: Víctor Gervilla Palomar