RF Characterization and Modeling of MOSFET Power Amplifier in Wireless Communication PDF Download

Author: Kenneth Kin Pun Tsui
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 196

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Author: Arvind Raghavan
Publisher: John Wiley & Sons
ISBN: 9780470228302
Category : Technology & Engineering
Languages : en
Pages : 224

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Book Description
Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.

Author: Peter Aaen
Publisher: Cambridge University Press
ISBN: 113946812X
Category : Technology & Engineering
Languages : en
Pages : 375

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Book Description
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Author: Paulo Augusto Dal Fabbro
Publisher: Springer Science & Business Media
ISBN: 9048193613
Category : Technology & Engineering
Languages : en
Pages : 171

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Book Description
Advances in electronics have pushed mankind to create devices, ranging from - credible gadgets to medical equipment to spacecraft instruments. More than that, modern society is getting used to—if not dependent on—the comfort, solutions, and astonishing amount of information brought by these devices. One ?eld that has continuously bene?tted from those advances is the radio frequency integrated c- cuit (RFIC) design, which in its turn has promoted countless bene?ts to the mankind as a payback. Wireless communications is one prominent example of what the - vances in electronics have enabled and their consequences to our daily life. How could anyone back in the eighties think of the possibilities opened by the wireless local area networks (WLANs) that can be found today in a host of places, such as public libraries, coffee shops, trains, to name just a few? How can a youngster, who lives this true WLAN experience nowadays, imagine a world without it? This book dealswith the design oflinearCMOS RF PowerAmpli?ers(PAs). The RF PA is a very important part of the RF transceiver, the device that enables wireless communications. Two important aspects that are key to keep the advances in RF PA design at an accelerate pace are treated: ef?ciency enhancement and frequen- tunable capability. For this purpose, the design of two different integrated circuits realizedina0. 11μmtechnologyispresented,eachoneaddressingadifferentaspect. With respect to ef?ciency enhancement, the design of a dynamic supply RF power ampli?er is treated, making up the material of Chaps. 2 to 4.

Author: Rui Ma
Publisher: kassel university press GmbH
ISBN: 3899588592
Category : Amplifiers, Radio frequency
Languages : en
Pages : 144

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Book Description
Front cover -- Titelseite -- Impressum -- Acknowledgments -- Contents -- List of Abbreviations and Acronyms -- Abstract -- Zusammenfassung -- Chapter 1 Introduction -- 1.1 Principle of the Partitioning Design Approach -- 1.2 Dissertation Organization -- Chapter 2 Investigation of Planar-Interconnection -- 2.1 Active Chip Device Interconnection -- 2.1.1 Die Attach -- 2.1.2 Wire Bonding Pad-To-Microstrip -- 2.2 Microstrip-to-Microstrip Interconnection -- 2.2.1 Soldering -- 2.2.2 Multi-Wire Bonding -- 2.2.3 Copper Ribbon -- 2.2.4 Silver- Painting -- Chapter 3 Analysis and Modeling of Passive SMD Components -- 3.1 SMD Resistor -- 3.2 SMD Capacitor -- 3.3 SMD Inductor -- Chapter 4 Modeling of AlGaAs/GaAs HEMT Chip Device -- 4.1 AIGaAs/GaGa HEMT Chip -- 4.2 Modeling Approach Overview -- 4.3 Small-Signal Modeling -- 4.3.1 Extrinsic Parameter Extraction -- 4.3.2 Intrinsic Parameter Extraction -- 4.4 Large-Signal Modeling -- 4.4.1 Gate Current and Charge Models -- 4.4.2 Drain Current Model -- 4.4.3 Model Verification -- Chapter 5 Demonstrator Design of a Class-AB Power Amplifier Following -- 5.1 Micro-Packaged Device Characterization -- 5.1.1 Small-Signal Performance -- 5.1.2 Large-Signal Performance -- 5.2 Bias Network Design -- 5.2.1 Drain Bias Network -- 5.2.2 Gate Bias Network -- 5.3 Matching Network Design -- 5.3.1 Matching Impedance Determination -- 5.4 Power Amplifier Performance Evaluation -- 5.4.1 Small-Signal Performance -- 5.4.2 Large-Signal Performance -- Chapter 6 Conclusions and Outlook -- Appendix -- Appendix A THLR In-Fixture Calibration -- Appendix B Precise Determination of Substrate Permittivity -- Appendix C Schematic Circuit of the Designed Power Amplifier Demonstrator -- Appendix D Power Amplifier Design Following the Conventional Design Approach -- References -- Back cover

Author: M. Jamal Deen
Publisher: World Scientific
ISBN: 9789810249052
Category : Science
Languages : en
Pages : 426

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Book Description
CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Author: Mike Golio
Publisher: CRC Press
ISBN: 1420006703
Category : Technology & Engineering
Languages : en
Pages : 772

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Book Description
Highlighting the challenges RF and microwave circuit designers face in their day-to-day tasks, RF and Microwave Circuits, Measurements, and Modeling explores RF and microwave circuit designs in terms of performance and critical design specifications. The book discusses transmitters and receivers first in terms of functional circuit block and then examines each block individually. Separate articles consider fundamental amplifier issues, low noise amplifiers, power amplifiers for handset applications and high power, power amplifiers. Additional chapters cover other circuit functions including oscillators, mixers, modulators, phase locked loops, filters and multiplexers. New chapters discuss high-power PAs, bit error rate testing, and nonlinear modeling of heterojunction bipolar transistors, while other chapters feature new and updated material that reflects recent progress in such areas as high-volume testing, transmitters and receivers, and CAD tools. The unique behavior and requirements associated with RF and microwave systems establishes a need for unique and complex models and simulation tools. The required toolset for a microwave circuit designer includes unique device models, both 2D and 3D electromagnetic simulators, as well as frequency domain based small signal and large signal circuit and system simulators. This unique suite of tools requires a design procedure that is also distinctive. This book examines not only the distinct design tools of the microwave circuit designer, but also the design procedures that must be followed to use them effectively.

Author: Andrei Grebennikov
Publisher: McGraw Hill Professional
ISBN: 0071782990
Category : Technology & Engineering
Languages : en
Pages : 433

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Book Description
This is a rigorous tutorial on radio frequency and microwave power amplifier design, teaching the circuit design techniques that form the microelectronic backbones of modern wireless communications systems. Suitable for self-study, corporate training, or Senior/Graduate classroom use, the book combines analytical calculations and computer-aided design techniques to arm electronic engineers with every possible method to improve their designs and shorten their design time cycles.

Author: Andrei Grebennikov
Publisher: Academic Press
ISBN: 0128227540
Category : Technology & Engineering
Languages : en
Pages : 840

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Book Description
Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies. This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings. Provides a complete history of high-efficiency Class E and Class F techniques Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations

Author: Chih-Hung Chen
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 400

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Book Description
Lastly, the design strategies of a low noise amplifier based on the developed noise models and extracted noise information are presented as a guide line to choose the device size and bias condition of the transistors. The impact of the model accuracy on the simulated noise performance of a two-stage low noise amplifier is also presented.