Research on Defects and Transport in Amorphous-silicon-based Semiconductors. Final Subcontract Report, 20 February 1991--19 April 1994 PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages : 28
Book Description
This report describes work on three individual tasks as follows. (1) Electron and hole drift measurements in a-Si{sub 1-x}Gex:H and a-Si{sub 1-x}Cx:H p-i-n solar cells. Multijunction solar cells incorporating modified band gap a-Si:H in a triple-junction structure are generally viewed as the most promising avenue for achieving an amorphous silicon-based solar call with 15% stabilized conversion efficiency. The specific objective of this task was to document the mobilities and deep-trapping mobility-lifetime products for electrons and holes in a-Si{sub 1-x}Gex:H and a-Si{sub 1-x}Cx:H alloys materials. (2) Electroabsorption measurements and built-in potential (V{sub bi}) in solar cells. V{sub bi} in a p-i-n solar call may be limiting the open-circuit voltage (V{sub oc}) in wide-band-gap cells (E{sub g}> 1.8 eV) currently under investigation as the top cell for 15% triple junction devices. The research addressed four issues that need to be resolved before the method can yield an error less than 0.1 V for V{sub bi}. The details are presented in this report. (3) Defect relaxation and Shockley-Read kinetics in a-Si:H. Quantitative modeling of solar cells is usually based on Shockley-Read kinetics. ̀̀An important assumption of this approach is that the rate of emission of a photocarrier trapped on a defect is independent of quasi-Fermi level location.
Author: Publisher: ISBN: Category : Languages : en Pages : 28
Book Description
This report describes work on three individual tasks as follows. (1) Electron and hole drift measurements in a-Si{sub 1-x}Gex:H and a-Si{sub 1-x}Cx:H p-i-n solar cells. Multijunction solar cells incorporating modified band gap a-Si:H in a triple-junction structure are generally viewed as the most promising avenue for achieving an amorphous silicon-based solar call with 15% stabilized conversion efficiency. The specific objective of this task was to document the mobilities and deep-trapping mobility-lifetime products for electrons and holes in a-Si{sub 1-x}Gex:H and a-Si{sub 1-x}Cx:H alloys materials. (2) Electroabsorption measurements and built-in potential (V{sub bi}) in solar cells. V{sub bi} in a p-i-n solar call may be limiting the open-circuit voltage (V{sub oc}) in wide-band-gap cells (E{sub g}> 1.8 eV) currently under investigation as the top cell for 15% triple junction devices. The research addressed four issues that need to be resolved before the method can yield an error less than 0.1 V for V{sub bi}. The details are presented in this report. (3) Defect relaxation and Shockley-Read kinetics in a-Si:H. Quantitative modeling of solar cells is usually based on Shockley-Read kinetics. ̀̀An important assumption of this approach is that the rate of emission of a photocarrier trapped on a defect is independent of quasi-Fermi level location.
Author: Publisher: ISBN: Category : Languages : en Pages : 16
Book Description
This report describes the results from research on two topics: (1) the effects of light-soaking on the electron drift mobility in a-Si:H, and (2) modulated electron spin resonance measurements and their relationship to the electronic correlation energy of the D center in a-Si:H. Both of these projects were undertaken to better determine where the standard'' model for a-Si:H breaks down. The standard model is reasonably successful in accounting for the most elementary deep trapping'' aspects of electron and hole transport in a-Si:H, and it accounts adequately for the sub-band-gap optical properties. However, it is much less clear whether it provides a sufficient basis for understanding several effects which are crucial in operating solar cells: electron and hole mobilities and recombination in the presence of light-bias and space-charge. In the standard model, one would not expect significant effects on drift mobilities due to light-soaking, which would be envisioned as simply increasing the D-center density. Similarly, in the standard model one would not anticipate a significant temperature dependence to electron spin resonance, because essentially all spins are already detected. Discussions in the available literature on the evidence regarding both effects were inconclusive. The work reported here sets considerably more stringent constraints on the magnitude of the two effects.
Author: Jai Singh Publisher: CRC Press ISBN: 9781420023848 Category : Technology & Engineering Languages : en Pages : 340
Book Description
Amorphous materials differ significantly from their crystalline counterparts in several ways that create unique issues in their use. This book explores these issues and their implications, and provides a full treatment of both experimental and theoretical studies in the field. Advances in Amorphous Semiconductors covers a wide range of studies on hydrogenated amorphous silicon, amorphous chalcogenides, and some oxide glasses. It reviews structural properties, properties associated with the charge carrier-phonon interaction, defects, electronic transport, photoconductivity, and some applications of amorphous semiconductors. The book explains a number of recent advances in semiconductor research, including some of the editors' own findings. It addresses some of the problems associated with the validity of the effective mass approximation, whether K is a good quantum number, and the concepts of phonons and excitons. It also discusses recent progress made in understanding light-induced degradations in amorphous semiconductors, which is seen as the most limiting problem in device applications. The book presents a comprehensive review of both experimental and theoretical studies on amorphous semiconductors, which will be useful to students, researchers, and instructors in the field of amorphous solids.
Author: Hellmut Fritzsche Publisher: World Scientific ISBN: 9789971509736 Category : Science Languages : en Pages : 324
Book Description
Disordered materials offer new and unexpected insights into the structure of solids and the ways charge carriers move and interact with their environment. The first part of this review volume presents new results and ideas in the subject dealing with the local bonding structure in amorphous and vitreous semiconductors. These include the local bonding structure in chalcogenide glasses containing metal atoms, the interaction of local vibrational modes with their local bonding environment, and new models for the H-bonding configurations.The second part is devoted to questions of low temperature hopping transport and recombination of photocarriers in disordered semiconductors as a function of frequency and at high electric fields. The reviews by leading experts offer different insights and attempt to address problems from the various angles.
Author: Richard Catlow Publisher: Springer Science & Business Media ISBN: 9401119422 Category : Science Languages : en Pages : 511
Book Description
The study of defects and disorder in solids remains a central topic in solid state science. Developments in the field continue to be promoted by new experimental and theoretical techniques, while further impetus for the study of disorder in solids is provided by the growing range of applications of solid state materials in which disorder at the atomic level plays a crucial rOle. In this book we attempt to present a survey of fundamental and applied aspects of the field. We consider the basic aspects of defective crystalline and amorphous solids. We discuss recent studies of structural, electronic, transport, thermodynamic and spectroscopic properties of such materials. Experimental and theoretical methodologies are reviewed, and detailed consideration is given to materials such as fast ion conductors and amorphous semiconductors that are of importance in an applied context. Any survey of this large field is necessarily selective. We have chosen to emphasise insulating (especially oxidic) and semi-conducting materials. But many of the approaches and techniques we describe apply generally across the entire field of solid state science. This volume is based on a NATO ASI held at the Residencia Santa Teresa de Jesus, Madrid in September 1991. The Editor is grateful to the NATO Scientific Affairs Division for their sponsorship of this School. Thanks are also due to all who participated in and lectured at the school, but especially to the organising committee of A. V. Chadwick, G. N. Greaves, M. Grigorkiewicz, J. H. Harding and S. Kalbitzer. C. R. A.
Author: Hellmut Fritzsche Publisher: World Scientific ISBN: 981453191X Category : Science Languages : en Pages : 1153
Book Description
This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.
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Author: Eric A. Schiff
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Author: Eric A. Schiff
Author: Jai Singh
Author: Hellmut Fritzsche
Author: Richard Catlow
Author: Hellmut Fritzsche
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