Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 179
Book Description
Reliability and Physical Mechanisms of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors for Advanced Display
Author: High Mobility and Enhanced Reliability Amorphous Indium-gallium-zinc Oxide Thin-film Transistors
Author: 羅傑Electrical Characterization and Reliability Study of Amorphous Indium-gallium-zinc Oxide Thin-film Transistors
Author: 馮正倫Advanced Display Technology
Author: In Byeong KangPublisher: Springer Nature
ISBN: 981336582X
Category : Technology & Engineering
Languages : en
Pages : 331
Book Description
This book provides a comprehensive and up-to-date guide to the AMOLED technologies and applications which have become industry standard in a range of devices, from small mobile displays to large televisions. Unlike other books on the topic, which cover the fundamentals, materials, processing, and manufacturing of OLEDs, this one-stop book discusses the core components, such as TFT backplanes, OLED materials and devices, and driving schematics together in one volume with chapters written by experts from leading international companies in the field of OLED materials and OLED TVs. It also examines emerging areas, such as micro-LEDs, displays using quantum dots, and AR & VR displays. Presenting the latest research trends as well as the basic principles of each topic, this book is intended for undergraduate and postgraduate students taking display-related courses, new researchers, and engineers in related fields.
On the Reversible Effects of Bias-stress Applied to Amorphous Indium-gallium-zinc-oxide Thin Film Transistors
Author: Anish Suresh BharadwajPublisher:
ISBN:
Category : Thin film transistors
Languages : en
Pages : 52
Book Description
"The role of amorphous IGZO (Indium Gallium Zinc Oxide) in Thin Film Transistors (TFT) has found its application in emerging display technologies such as active matrix liquid crystal display (LCD) and active matrix organic light-emitting diode (AMOLED) due to factors such as high mobility 10-20 cm2/(V.s), low subthreshold swing (~120mV/dec), overall material stability and ease of fabrication. However, prolonged application of gate bias on the TFT results in deterioration of I-V characteristics such as sub-threshold distortion and a distinct shift in threshold voltage. Both positive-bias and negative-bias affects have been investigated. In most cases positive-stress was found to have negligible influence on device characteristics, however a stress induced trap state was evident in certain cases. Negative stress demonstrated a pronounced influence by donor like interface traps, with significant transfer characteristics shift that was reversible over a period of time at room temperature. It was also found that the reversible mechanism to pre-stress conditions was accelerated when samples were subjected to cryogenic temperature (77 K). To improve device performance BG devices were subjected to extended anneals and encapsulated with ALD alumina. These devices were found to have excellent resistance to bias stress. Double gate devices that were subjected to extended anneals and alumina capping revealed similar results with better electrostatics compared to BG devices. The cause and effect of bias stress and its reversible mechanisms on IGZO TFTs has been studied and explained with supporting models."--Abstract.
Investigation of Reliability and Physical Mechanisms of Flexible AInGaZnO Thin Film Transistors for Advanced Display
Author: 廖柏詠Analysis of Material Property and Reliability Testing of Thin-film Transistor of Amorphous Indium-Gallium-Zinc-Oxide
Author: 徐國修Post Processing Treatment of InGaZnO Thin Film Transistors for Improved Bias-illumination Stress Reliability
Author: Muhammad Ruhul HasinPublisher:
ISBN:
Category : Indium gallium zinc oxide
Languages : en
Pages : 65
Book Description
This thesis work mainly examined the stability and reliability issues of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors under bias-illumination stress. Amorphous hydrogenated silicon has been the dominating material used in thin film transistors as a channel layer. However with the advent of modern high performance display technologies, it is required to have devices with better current carrying capability and better reproducibility. This brings the idea of new material for channel layer of these devices. Researchers have tried poly silicon materials, organic materials and amorphous mixed oxide materials as a replacement to conventional amorphous silicon layer. Due to its low price and easy manufacturing process, amorphous mixed oxide thin film transistors have become a viable option to replace the conventional ones in order to achieve high performance display circuits. But with new materials emerging, comes the challenge of reliability and stability issues associated with it. Performance measurement under bias stress and bias-illumination stress have been reported previously. This work proposes novel post processing low temperature long time annealing in optimum ambient in order to annihilate or reduce the defects and vacancies associated with amorphous material which lead to the instability or even the failure of the devices. Thin film transistors of a-IGZO has been tested for standalone illumination stress and bias-illumination stress before and after annealing. HP 4155B semiconductor parameter analyzer has been used to stress the devices and measure the output characteristics and transfer characteristics of the devices. Extra attention has been given about the effect of forming gas annealing on a-IGZO thin film. a-IGZO thin film deposited on silicon substrate has been tested for resistivity, mobility and carrier concentration before and after annealing in various ambient. Elastic Recoil Detection has been performed on the films to measure the amount of hydrogen atoms present in the film. Moreover, the circuit parameters of the thin film transistors has been extracted to verify the physical phenomenon responsible for the instability and failure of the devices. Parameters like channel resistance, carrier mobility, power factor has been extracted and variation of these parameters has been observed before and after the stress.
Optical Analysis and Reliability Testing of Dual Gate Thin-film Transistor of Amorphous Indium-gallium-zinc-oxide
Author: 黃冠彰Amorphous Oxide Semiconductors
Author: Hideo HosonoPublisher: John Wiley & Sons
ISBN: 1119715652
Category : Technology & Engineering
Languages : en
Pages : 644
Book Description
AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.