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Relaxation Dynamics and Decoherence of Excitons in II-VI Semiconductor Nanostructures

Relaxation Dynamics and Decoherence of Excitons in II-VI Semiconductor Nanostructures PDF Author: Pradeep Bajracharya
Publisher:
ISBN:
Category :
Languages : en
Pages : 163

Book Description
We study the dynamics of excitons in bimodal CdSe quantum dots. The effect of exciton localization is investigated by identifying transfer mechanisms due to thermalization and redistribution of excitons. We observe an exciton emission from low energy (QDs1) and weaker emission from high energy (QDs2) at low excitation levels at 10 K. Temperature-dependent photoluminescence (PL) studies reveal a thermally activated exciton transfer from QDs1 to QDs2. Time-resolved PL estimate the characteristic radiative and nonradiative decay rates as well as the trapping rate from the QD-precursor layer. The observed PL is reasonably reproduced using a coupled rate equation model. We investigate 10 nm Zn0.94Mg0.06Se/ZnSe quantum well (QW) with two-beam four-wave mixing (FWM) using 90 fs pulses. At high intensity the signal is dominated by & chi(3) FWM processes and at low intensity it reveals an exciton resonant phase coherent photorefractive (PCP) effect that is attributed to the formation of an electron grating within the QW by the interference of coherent QW excitons. The observed traces and spectra are reproduced by the model based on a 15-level system and a phenomenological PCP model. The dynamical properties of the electron grating responsible for the PCP is further studied reducing the pulse repetition at 45, 55 and 65 K. The PCP diffraction reveals a nearly constant efficiency up to 1 & mus that implies a constant average equilibrium electron density. With increasing temperature, the efficiency decreases due to QW electron escape back to the substrate reducing the grating lifetime. The observed PCP efficiency is studied with a model that considers the equilibrium density dynamics in the QW. We further report on PCP effect in Zn0.9Mg0.1Se/ZnSe QW by performing intensity dependent and polarization dependent two-beam FWM experiments using 30 fs pulses at 2.79 and 2.84 eV. The PCP effect is attributed to the formation of an electron grating within the QW by the interference of excitons in the ZnMgSe barrier. Model calculations based on the extended optical Bloch equations for a 17-level system and a modified PCP model reproduce most of the features of intensity and polarization dependent FWM spectra and traces. Three beam experiments support the observed PCP effect.

Relaxation Dynamics and Decoherence of Excitons in II-VI Semiconductor Nanostructures

Relaxation Dynamics and Decoherence of Excitons in II-VI Semiconductor Nanostructures PDF Author: Pradeep Bajracharya
Publisher:
ISBN:
Category :
Languages : en
Pages : 163

Book Description
We study the dynamics of excitons in bimodal CdSe quantum dots. The effect of exciton localization is investigated by identifying transfer mechanisms due to thermalization and redistribution of excitons. We observe an exciton emission from low energy (QDs1) and weaker emission from high energy (QDs2) at low excitation levels at 10 K. Temperature-dependent photoluminescence (PL) studies reveal a thermally activated exciton transfer from QDs1 to QDs2. Time-resolved PL estimate the characteristic radiative and nonradiative decay rates as well as the trapping rate from the QD-precursor layer. The observed PL is reasonably reproduced using a coupled rate equation model. We investigate 10 nm Zn0.94Mg0.06Se/ZnSe quantum well (QW) with two-beam four-wave mixing (FWM) using 90 fs pulses. At high intensity the signal is dominated by & chi(3) FWM processes and at low intensity it reveals an exciton resonant phase coherent photorefractive (PCP) effect that is attributed to the formation of an electron grating within the QW by the interference of coherent QW excitons. The observed traces and spectra are reproduced by the model based on a 15-level system and a phenomenological PCP model. The dynamical properties of the electron grating responsible for the PCP is further studied reducing the pulse repetition at 45, 55 and 65 K. The PCP diffraction reveals a nearly constant efficiency up to 1 & mus that implies a constant average equilibrium electron density. With increasing temperature, the efficiency decreases due to QW electron escape back to the substrate reducing the grating lifetime. The observed PCP efficiency is studied with a model that considers the equilibrium density dynamics in the QW. We further report on PCP effect in Zn0.9Mg0.1Se/ZnSe QW by performing intensity dependent and polarization dependent two-beam FWM experiments using 30 fs pulses at 2.79 and 2.84 eV. The PCP effect is attributed to the formation of an electron grating within the QW by the interference of excitons in the ZnMgSe barrier. Model calculations based on the extended optical Bloch equations for a 17-level system and a modified PCP model reproduce most of the features of intensity and polarization dependent FWM spectra and traces. Three beam experiments support the observed PCP effect.

Quantum Coherence Correlation and Decoherence in Semiconductor Nanostructures

Quantum Coherence Correlation and Decoherence in Semiconductor Nanostructures PDF Author: Toshihide Takagahara
Publisher: Academic Press
ISBN: 0080525121
Category : Technology & Engineering
Languages : en
Pages : 508

Book Description
Semiconductor nanostructures are attracting a great deal of interest as the most promising device with which to implement quantum information processing and quantum computing. This book surveys the present status of nanofabrication techniques, near field spectroscopy and microscopy to assist the fabricated nanostructures. It will be essential reading for academic and industrial researchers in pure and applied physics, optics, semiconductors and microelectronics. - The first up-to-date review articles on various aspects on quantum coherence, correlation and decoherence in semiconductor nanostructures

Semiconductor Nanostructures

Semiconductor Nanostructures PDF Author: Dieter Bimberg
Publisher: Springer Science & Business Media
ISBN: 3540778993
Category : Technology & Engineering
Languages : en
Pages : 369

Book Description
Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such “quantum dots” are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened. This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world.

Chemical Abstracts

Chemical Abstracts PDF Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540

Book Description


Optics of Semiconductors and Their Nanostructures

Optics of Semiconductors and Their Nanostructures PDF Author: Heinz Kalt
Publisher: Springer Science & Business Media
ISBN: 3662091151
Category : Science
Languages : en
Pages : 360

Book Description
In recent years the field of semiconductor optics has been pushed to several extremes. The size of semiconductor structures has shrunk to dimensions of a few nanometers, the semiconductor-light interaction is studied on timescales as fast as a few femtoseconds, and transport properties on a length scale far below the wavelength of light have been revealed. These advances were driven by rapid improvements in both semiconductor and optical technologies and were further facilitated by progress in the theoretical description of optical excitations in semiconductors. This book, written by leading experts in the field, provides an up-to-date introduction to the optics of semiconductors and their nanostructures so as to help the reader understand these exciting new developments. It also discusses recently established applications, such as blue-light emitters, as well as the quest for future applications in areas such as spintronics, quantum information processing, and third-generation solar cells.

Advances in Spectroscopy for Lasers and Sensing

Advances in Spectroscopy for Lasers and Sensing PDF Author: Baldassare Di Bartolo
Publisher: Springer Science & Business Media
ISBN: 1402047894
Category : Science
Languages : en
Pages : 574

Book Description
This volume presents the Proceedings of "New Development in Optics and Related Fields," held in Italy in June, 2005. This meeting was organized by the International School of Atomic and Molecular Spectroscopy of the "Ettore Majorana" Center for Scientific Culture. The purpose of this Institute was to provide a comprehensive and coherent treatment of the new techniques and contemporary developments in optics and related fields.

Comprehensive Semiconductor Science and Technology

Comprehensive Semiconductor Science and Technology PDF Author:
Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572

Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Optical Generation and Control of Quantum Coherence in Semiconductor Nanostructures

Optical Generation and Control of Quantum Coherence in Semiconductor Nanostructures PDF Author: Gabriela Slavcheva
Publisher: Springer Science & Business Media
ISBN: 3642124917
Category : Science
Languages : en
Pages : 338

Book Description
The fundamental concept of quantum coherence plays a central role in quantum physics, cutting across disciplines of quantum optics, atomic and condensed matter physics. Quantum coherence represents a universal property of the quantum s- tems that applies both to light and matter thereby tying together materials and p- nomena. Moreover, the optical coherence can be transferred to the medium through the light-matter interactions. Since the early days of quantum mechanics there has been a desire to control dynamics of quantum systems. The generation and c- trol of quantum coherence in matter by optical means, in particular, represents a viable way to achieve this longstanding goal and semiconductor nanostructures are the most promising candidates for controllable quantum systems. Optical generation and control of coherent light-matter states in semiconductor quantum nanostructures is precisely the scope of the present book. Recently, there has been a great deal of interest in the subject of quantum coh- ence. We are currently witnessing parallel growth of activities in different physical systems that are all built around the central concept of manipulation of quantum coherence. The burgeoning activities in solid-state systems, and semiconductors in particular, have been strongly driven by the unprecedented control of coherence that previously has been demonstrated in quantum optics of atoms and molecules, and is now taking advantage of the remarkable advances in semiconductor fabrication technologies. A recent impetus to exploit the coherent quantum phenomena comes from the emergence of the quantum information paradigm.

Quantum Dots

Quantum Dots PDF Author: Alexander Tartakovskii
Publisher: Cambridge University Press
ISBN: 1107012589
Category : Science
Languages : en
Pages : 377

Book Description
A comprehensive review of cutting-edge solid state research, focusing on quantum dot nanostructures, for graduate students and researchers.

Ultrafast Phenomena in Semiconductors

Ultrafast Phenomena in Semiconductors PDF Author:
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 318

Book Description